Биполярный транзистор RT2P22M
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: RT2P22M
Маркировка: PQ
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 22 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
SC-88A
Аналоги (замена) для RT2P22M
RT2P22M
Datasheet (PDF)
..1. Size:164K isahaya
rt2p22m.pdf RT2P22M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P22M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
9.1. Size:165K isahaya
rt2p25m.pdf RT2P25M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
9.2. Size:164K isahaya
rt2p26m.pdf RT2P26M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
9.3. Size:170K isahaya
rt2p27m.pdf RT2P27M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
9.4. Size:164K isahaya
rt2p20m.pdf RT2P20M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P20M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
9.5. Size:165K isahaya
rt2p24m.pdf RT2P24M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
9.6. Size:169K isahaya
rt2p28m.pdf RT2P28M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P28M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
9.7. Size:169K isahaya
rt2p29m.pdf RT2P29M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P29M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
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