MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5111DW1T1/DMUN5111DW1T1Dual Bias Resistor TransistorsSERIESPNP Silicon Surface Mount Transistors withMotorola Preferred DevicesMonolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithicbias network consisting of two resistors; a series base resistor and a bas

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5111T1/DBias Resistor TransistorMUN5111T1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a singl

MUN5116DW1,NSBA143TDXV6Dual PNP Bias ResistorTransistorsR1 = 4.7 kW, R2 = 8 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR1 R

MUN5111DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with ahttp://onsemi.commonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to(3) (

MUN5111T1 SERIESPreferred DevicesBias Resistor TransistorPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resi

MUN5112DW1,NSBA124EDXV6,NSBA124EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 22 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

MUN5111T1 SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series ba

MUN5111T1G Series,SMUN5111T1G,NSVMUN5111T1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkPNP SILICONThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorBIAS RESISTORTransistor (BRT) contains a single transistor with a

MUN5111DW1T1G Series,SMUN5111DW1T1G SeriesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to

MUN5113DW1,NSBA144EDXV6,NSBA144EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1) This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wi

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)

MUN5111 SeriesCOLLECTORBias Resistor Transistor33PNP SiliconBASER111R222SOT-323(SC-70)EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device

MUN5111DW Series6 546Dual Bias Resistor Transistor54R1R2PNP Silicon Q2123R Q21SOT-363(SC-88)R11 2 3( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V -50CEO VdcVdcCollector-Base Voltage VCBO -50Collector Current-Continuous IC mAdc-100Thermal CharacteristicsCharacteristics Symbo

LESHAN RADIO COMPANY, LTD.Dual Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLMUN5111DW1T1GSerieswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1Gnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. TheseSeriesdigital transistors are