UN511L
- Даташиты. Аналоги. Основные параметры
Наименование производителя: UN511L
Маркировка: 6Q
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 80
MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
SC70
Аналоги (замена) для UN511L
UN511L
Datasheet (PDF)
9.1. Size:216K motorola
mun5111.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5111DW1T1/D MUN5111DW1T1 Dual Bias Resistor Transistors SERIES PNP Silicon Surface Mount Transistors with Motorola Preferred Devices Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a bas
9.2. Size:238K motorola
mun5111t1rev2.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5111T1/D Bias Resistor Transistor MUN5111T1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a singl
9.3. Size:195K onsemi
mun5116dw1 nsba143tdxv6.pdf 

MUN5116DW1, NSBA143TDXV6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias R1 R
9.4. Size:226K onsemi
mun5111dw1t1-d.pdf 

MUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a http //onsemi.com monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to (3) (
9.5. Size:125K onsemi
mun5111t1 6a-m sot323.pdf 

MUN5111T1 SERIES Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resi
9.6. Size:113K onsemi
mun5112dw1.pdf 

MUN5112DW1, NSBA124EDXV6, NSBA124EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 22 kW, R2 = 22 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit
9.7. Size:141K onsemi
mun5111t1-ser.pdf 

MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series ba
9.10. Size:90K onsemi
nsvmun5113dw1t3g.pdf 

MUN5113DW1, NSBA144EDXV6, NSBA144EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 47 kW, R2 = 47 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wi
9.11. Size:89K onsemi
nsvmun5111dw1t3g.pdf 

MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit
9.12. Size:431K panasonic
unr511x un511x series.pdf 

Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape/ magazine packing (0.65) (0.65)
9.13. Size:174K wietron
mun5111.pdf 

MUN5111 Series COLLECTOR Bias Resistor Transistor 3 3 PNP Silicon BASE R1 1 1 R2 2 2 SOT-323(SC-70) EMITTER ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V 50 CEO Vdc Vdc Collector-Base Voltage VCBO 50 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Max Unit Characteristics Symbol Total Device
9.14. Size:373K wietron
mun5111dw.pdf 

MUN5111DW Series 6 5 4 6 Dual Bias Resistor Transistor 5 4 R 1 R 2 PNP Silicon Q 2 1 2 3 R Q 2 1 SOT-363(SC-88) R 1 1 2 3 ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V -50 CEO Vdc Vdc Collector-Base Voltage VCBO -50 Collector Current-Continuous IC mAdc -100 Thermal Characteristics Characteristics Symbo
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History: MPS4146
| AC573