UN511M
 - Даташиты. Аналоги. Основные параметры
   Наименование производителя: UN511M
   Маркировка: EI
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.15
 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50
 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
 V
   Макcимальный постоянный ток коллектора (Ic): 0.1
 A
   Предельная температура PN-перехода (Tj): 150
 °C
   Граничная частота коэффициента передачи тока (ft): 80
 MHz
   Статический коэффициент передачи тока (hfe): 80
		   Корпус транзистора: 
SC70
				
				  
				  Аналоги (замена) для UN511M
   - 
подбор ⓘ биполярного транзистора по параметрам
 
		
UN511M
 Datasheet (PDF)
 9.1.  Size:216K  motorola
 mun5111.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5111DW1T1/DMUN5111DW1T1Dual Bias Resistor TransistorsSERIESPNP Silicon Surface Mount Transistors withMotorola Preferred DevicesMonolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithicbias network consisting of two resistors; a series base resistor and a bas
 9.2.  Size:238K  motorola
 mun5111t1rev2.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5111T1/DBias Resistor TransistorMUN5111T1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a singl
 9.3.  Size:195K  onsemi
 mun5116dw1 nsba143tdxv6.pdf 

MUN5116DW1,NSBA143TDXV6Dual PNP Bias ResistorTransistorsR1 = 4.7 kW, R2 = 8 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR1 R
 9.4.  Size:226K  onsemi
 mun5111dw1t1-d.pdf 

MUN5111DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor with ahttp://onsemi.commonolithic bias network consisting of two resistors; a series base resistorand a base-emitter resistor. These digital transistors are designed to(3) (
 9.5.  Size:125K  onsemi
 mun5111t1 6a-m sot323.pdf 

MUN5111T1 SERIESPreferred DevicesBias Resistor TransistorPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resi
 9.6.  Size:113K  onsemi
 mun5112dw1.pdf 

MUN5112DW1,NSBA124EDXV6,NSBA124EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 22 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit
 9.7.  Size:141K  onsemi
 mun5111t1-ser.pdf 

MUN5111T1 SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series ba
 9.10.  Size:90K  onsemi
 nsvmun5113dw1t3g.pdf 

MUN5113DW1,NSBA144EDXV6,NSBA144EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1) This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wi
 9.11.  Size:89K  onsemi
 nsvmun5111dw1t3g.pdf 

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
 9.12.  Size:431K  panasonic
 unr511x un511x series.pdf 

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)
 9.13.  Size:174K  wietron
 mun5111.pdf 

MUN5111 SeriesCOLLECTORBias Resistor Transistor33PNP SiliconBASER111R222SOT-323(SC-70)EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device
 9.14.  Size:373K  wietron
 mun5111dw.pdf 

MUN5111DW Series6 546Dual Bias Resistor Transistor54R1R2PNP Silicon Q2123R Q21SOT-363(SC-88)R11 2 3( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V -50CEO VdcVdcCollector-Base Voltage VCBO -50Collector Current-Continuous IC mAdc-100Thermal CharacteristicsCharacteristics Symbo
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