3DD103E datasheet, аналоги, основные параметры
Наименование производителя: 3DD103E 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO-3
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Аналоги (замена) для 3DD103E
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3DD103E даташит
..1. Size:202K inchange semiconductor
3dd103e.pdf 
isc Silicon NPN Power Transistor 3DD103E DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min.) (BR)CEO DC Current Gain- h = 10(Min.)@I = 1.5A FE C Collector-Emitter Saturation Voltage- V )= 4V(Max)@ I = 3A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC-DC converts
8.1. Size:150K china
3dd103.pdf 
3DD103 NPN A B C D E PCM TC=75 50 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 300 600 800 1200 1500 V V(BR)CEO ICE=5mA 200 300 400 600 800 V V(BR)EBO IEB=10mA 4.0 V ICBO VCB=50V 0.1 mA ICE
9.2. Size:150K china
3dd101.pdf 
3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.
9.3. Size:150K china
3dd102.pdf 
3DD101/3DD102 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 100 150 200 250 300 350 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50V 0.
9.4. Size:33K shaanxi
3dd10.pdf 
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ84
9.5. Size:24K shaanxi
3dd104.pdf 
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104 NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97 4. Use for Low-speed sw
9.6. Size:183K inchange semiconductor
3dd104e.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.7. Size:182K inchange semiconductor
3dd104c.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.8. Size:183K inchange semiconductor
3dd101b.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.9. Size:183K inchange semiconductor
3dd104d.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.10. Size:206K inchange semiconductor
3dd100e.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100E DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.11. Size:182K inchange semiconductor
3dd101e.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.12. Size:209K inchange semiconductor
3dd102a.pdf 
isc Silicon NPN Power Transistor 3DD102A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform
9.13. Size:184K inchange semiconductor
3dd100c.pdf 
E Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100C DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMU
9.14. Size:184K inchange semiconductor
3dd100b.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD100B DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
9.15. Size:191K inchange semiconductor
3dd101a.pdf 
isc Silicon NPN Power Transistor 3DD101A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,DC-DC converter
9.16. Size:182K inchange semiconductor
3dd102d.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD102D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For aud
9.17. Size:182K inchange semiconductor
3dd104a.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.18. Size:185K inchange semiconductor
3dd100d.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100D DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.19. Size:182K inchange semiconductor
3dd101d.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.20. Size:210K inchange semiconductor
3dd102c.pdf 
isc Silicon NPN Power Transistor 3DD102C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO DC Current Gain- h = 20(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform
9.21. Size:186K inchange semiconductor
3dd100a.pdf 
isc Silicon NPN Power Transistor 3DD100A DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
9.22. Size:182K inchange semiconductor
3dd101c.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD101C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
9.23. Size:204K inchange semiconductor
3dd104b.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD104B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE
Другие транзисторы: 3DD100E, 3DD101A, 3DD101B, 3DD101C, 3DD101D, 3DD101E, 3DD102A, 3DD102D, MPSA42, 3DD104A, 3DD104B, 3DD104C, 3DD104D, 3DD104E, 3DD159A, 3DD159B, 3DD159C
