UPA801TC-GB - описание и поиск аналогов

DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA801TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The PA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA High g

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD The PA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit mm) 2.1 0.1 FEATURES 1.25 0.1 Low Noise NF = 1.2 dB TYP. @ f = 1 GHz

NPN SILICON HIGH UPA800T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE PACKAGE OUTLINE S06 (Top View) 2 NE680 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE 2.1 0.1 NF = 1.9 dB TYP at 2 GHz 1.25 0.1 HIGH GAIN S21E 2 = 7.5 dB TYP at 2 GHz EXCELLENT LOW VOLTAGE, LOW CURRENT 1 6 0.65 PERFORMANCE 2.0 0.2 0.2 (All

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The PA800T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit mm) 2.1 0.1 FEATURES 1.25 0.1 Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE

DATA SHEET SILICON TRANSISTOR PA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES PACKAGE DRAWINGS Low Current, High Gain (Unit mm) S21e 2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz 2.1 0.1 S21e 2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz 1.25 0.1 A Super Mini Mold Package Adopted Built-

NPN SILICON HIGH UPA806T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE PACKAGE OUTLINE S06 2 NE685 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE 2.1 0.1 NF = 1.5 dB TYP at 2 GHz 1.25 0.1 HIGH GAIN S21E 2 = 8.5 dB TYP at 2 GHz HIGH GAIN BANDWIDTH fT = 12 GHz 1 6 0.65 EXCELLENT LOW VOLTAGE, LOW CUR

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES PACKAGE DRAWINGS Low Noise, High Gain (Unit mm) Operable at Low Voltage 2.1 0.1 Small Feed-back Capacitance 1.25 0.1 Cre = 0.4 pF TYP. Built-in 2 Transistors (2 2SC4959) ORDERING INFORMATION PART NUMB

NPN SILICON HIGH UPA802T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE PACKAGE OUTLINE S06 2 NE681 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE 2.1 0.1 NF = 1.4 dB TYP at 1 GHz 1.25 0.1 HIGH GAIN S21E 2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH fT = 7 GHz 1 6 LOW CURRENT OPERATION 0.65 2.0 0.2

NPN SILICON HIGH UPA807T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE PACKAGE OUTLINE S06 2 NE686 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE 2.1 0.1 NF = 1.5 dB TYP at 2 GHz 1.25 0.1 HIGH GAIN S21E 2 = 9 dB TYP at 2 GHz HIGH GAIN BANDWIDTH fT = 13 GHz 1 6 LOW CURRENT OPERATION 0.65 2.0 0.2

NPN SILICON HIGH UPA808T FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE PACKAGE OUTLINE S06 2 NE687 Die in a 2 mm x 1.25 mm package (Top View) LOW NOISE FIGURE 2.1 0.1 NF = 1.3 dB TYP at 2 GHz HIGH GAIN 1.25 0.1 S21E 2 = 8.5 dB TYP at 2 GHz LOW CURRENT OPERATION 1 6 0.65 DESCRIPTION 2.0 0.2 0.2 (All Leads) NEC

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA804T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The 2SC4571 has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit mm) FEATURES 2.1 0.1 High fT 1.25 0.1 fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Small Collector Capacitance Cob = 0.9 pF TYP. (@ VCB = 5 V, IE = 0,

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The PA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band. (Unit mm) 2.1 0.1 FEATURES 1.25 0.1 Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES PACKAGE DRAWINGS Low Noise, High Gain (Unit mm) Operable at Low Voltage 2.1 0.1 Small Feed-back Capacitance 1.25 0.1 Cre = 0.3 pF TYP. Built-in 2 Transistors (2 2SC4958) ORDERING INFORMATION PART NUMB