DATA SHEETNPN SILICON RF TWIN TRANSISTORPA801TCNPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 2SC5006)FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLDDESCRIPTIONThe PA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF bandto the UHF band.FEATURES Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA High g

PRELIMINARY DATA SHEETSILICON TRANSISTORPA801THIGH-FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLDThe PA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGSto amplify low noise in the VHF band to the UHF band. (Unit: mm)2.10.1FEATURES1.250.1 Low NoiseNF = 1.2 dB TYP. @ f = 1 GHz

NPN SILICON HIGHUPA800TFREQUENCY TRANSISTORFEATURESOUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: PACKAGE OUTLINE S06(Top View)2 NE680 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE:2.1 0.1NF = 1.9 dB TYP at 2 GHz1.25 0.1 HIGH GAIN:|S21E|2 = 7.5 dB TYP at 2 GHz EXCELLENT LOW VOLTAGE, LOW CURRENT1 60.65PERFORMANCE2.0 0.20.2 (All

PRELIMINARY DATA SHEETSILICON TRANSISTORPA800THIGH-FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 ELEMENTS) MINI MOLDThe PA800T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGSto amplify low noise in the VHF band to the UHF band. (Unit: mm)2.10.1FEATURES1.250.1 Low NoiseNF = 1.9 dB TYP. @ f = 2 GHz, VCE

DATA SHEETSILICON TRANSISTORPA807TMICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLDFEATURES PACKAGE DRAWINGS Low Current, High Gain (Unit: mm)|S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz2.10.1|S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz1.250.1 A Super Mini Mold Package Adopted Built-

NPN SILICON HIGHUPA806TFREQUENCY TRANSISTORFEATURESOUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE:PACKAGE OUTLINE S062 NE685 Die in a 2 mm x 1.25 mm package(Top View) LOW NOISE FIGURE:2.1 0.1NF = 1.5 dB TYP at 2 GHz1.25 0.1 HIGH GAIN:|S21E|2 = 8.5 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 12 GHz1 60.65 EXCELLENT LOW VOLTAGE, LOW CUR

DATA SHEETSILICON TRANSISTORPA808TMICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLDFEATURES PACKAGE DRAWINGS Low Noise (Unit: mm)NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz2.10.1NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz1.250.1 A Super Mini Mold Package Adopted Built-in 2 Transistors (2

PRELIMINARY DATA SHEETSILICON TRANSISTORPA806TMICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 ELEMENTS) MINI MOLDFEATURES PACKAGE DRAWINGS Low Noise, High Gain (Unit: mm) Operable at Low Voltage2.10.1 Small Feed-back Capacitance1.250.1Cre = 0.4 pF TYP. Built-in 2 Transistors (2 2SC4959)ORDERING INFORMATIONPART NUMB

NPN SILICON HIGHUPA802TFREQUENCY TRANSISTORFEATURES OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE:PACKAGE OUTLINE S062 NE681 Die in a 2 mm x 1.25 mm package(Top View) LOW NOISE FIGURE:2.1 0.1NF = 1.4 dB TYP at 1 GHz1.25 0.1 HIGH GAIN:|S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz1 6 LOW CURRENT OPERATION0.652.0 0.2

NPN SILICON HIGHUPA807TFREQUENCY TRANSISTORFEATURESOUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE:PACKAGE OUTLINE S062 NE686 Die in a 2 mm x 1.25 mm package(Top View) LOW NOISE FIGURE:2.1 0.1NF = 1.5 dB TYP at 2 GHz1.25 0.1 HIGH GAIN:|S21E|2 = 9 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 13 GHz1 6 LOW CURRENT OPERATION 0.652.0 0.2

NPN SILICON HIGHUPA808TFREQUENCY TRANSISTORFEATURESOUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE:PACKAGE OUTLINE S062 NE687 Die in a 2 mm x 1.25 mm package(Top View) LOW NOISE FIGURE:2.1 0.1NF = 1.3 dB TYP at 2 GHz HIGH GAIN:1.25 0.1|S21E|2 = 8.5 dB TYP at 2 GHz LOW CURRENT OPERATION1 60.65DESCRIPTION2.0 0.20.2 (All Leads)NEC

PRELIMINARY DATA SHEETSILICON TRANSISTORPA804TNPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 ELEMENTS) MINI MOLDThe 2SC4571 has built-in 2 transistors which were developed for UHF.PACKAGE DRAWINGS(Unit: mm)FEATURES2.10.1 High fT1.250.1fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Small Collector CapacitanceCob = 0.9 pF TYP. (@ VCB = 5 V, IE = 0,

PRELIMINARY DATA SHEETSILICON TRANSISTORPA802THIGH-FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 ELEMENTS) MINI MOLDThe PA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGSto amplify low noise in the VHF band to the UHF band.(Unit: mm)2.10.1FEATURES1.250.1 Low NoiseNF = 1.4 dB TYP. @ f = 1 GHz, VCE

PRELIMINARY DATA SHEETSILICON TRANSISTORPA805TMICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR(WITH BUILT-IN 2 ELEMENTS) MINI MOLDFEATURES PACKAGE DRAWINGS Low Noise, High Gain (Unit: mm) Operable at Low Voltage2.10.1 Small Feed-back Capacitance1.250.1Cre = 0.3 pF TYP. Built-in 2 Transistors (2 2SC4958)ORDERING INFORMATIONPART NUMB