2SD1885C. Аналоги и основные параметры
Наименование производителя: 2SD1885C
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 65 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 5
Корпус транзистора: TO-3P
Аналоги (замена) для 2SD1885C
- подборⓘ биполярного транзистора по параметрам
2SD1885C даташит
..1. Size:216K inchange semiconductor
2sd1885c.pdf 
isc Silicon NPN Power Transistor 2SD1885C DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
7.1. Size:93K sanyo
2sd1885.pdf 
Ordering number EN2432A NPN Triple Diffused Planar Silicon Transistor 2SD1885 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1885] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High
7.2. Size:216K inchange semiconductor
2sd1885.pdf 
isc Silicon NPN Power Transistor 2SD1885 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.1. Size:89K sanyo
2sd1883.pdf 
Ordering number EN2430 NPN Triple Diffused Planar Silicon Transistor 2SD1883 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1883] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
8.2. Size:91K sanyo
2sd1886.pdf 
Ordering number EN2433 NPN Triple Diffused Planar Silicon Transistor 2SD1886 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1886] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
8.3. Size:89K sanyo
2sd1882.pdf 
Ordering number EN2429 NPN Triple Diffused Planar Silicon Transistor 2SD1882 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1882] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
8.4. Size:90K sanyo
2sd1881.pdf 
Ordering number EN2428A NPN Triple Diffused Planar Silicon Transistor 2SD1881 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1881] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High
8.5. Size:91K sanyo
2sd1887.pdf 
Ordering number EN2434 NPN Triple Diffused Planar Silicon Transistor 2SD1887 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1887] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
8.6. Size:84K sanyo
2sd1886c.pdf 
Ordering number EN7201 2SD1886C SANYO Semiconductors DATA SHEET www.datasheet4u.com NPN Triple Diffused Planar Silicon Transistor 2SD1886C Color TV Horizontal Deflection Output Applications Features High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=
8.7. Size:88K sanyo
2sd1884.pdf 
Ordering number EN2431 NPN Triple Diffused Planar Silicon Transistor 2SD1884 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1884] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r
8.8. Size:88K sanyo
2sd1880.pdf 
Ordering number EN2427A NPN Triple Diffused Planar Silicon Transistor 2SD1880 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1880] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High
8.9. Size:38K rohm
2sd1889.pdf 
2SB1340 Transistors Transistors 2SD1889 (96-650-B88) (96-765-D88) 288
8.10. Size:212K inchange semiconductor
2sd1889.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1889 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 2A) FE CE C Complement to Type 2SB1340 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RA
8.11. Size:216K inchange semiconductor
2sd1883.pdf 
isc Silicon NPN Power Transistor 2SD1883 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.12. Size:216K inchange semiconductor
2sd1886.pdf 
isc Silicon NPN Power Transistor 2SD1886 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.13. Size:216K inchange semiconductor
2sd1882.pdf 
isc Silicon NPN Power Transistor 2SD1882 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.14. Size:215K inchange semiconductor
2sd1881.pdf 
isc Silicon NPN Power Transistor 2SD1881 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )
8.15. Size:208K inchange semiconductor
2sd188.pdf 
isc Silicon NPN Power Transistors 2SD188 DESCRIPTION With TO-3 package Large current capability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emi
8.16. Size:216K inchange semiconductor
2sd1887.pdf 
isc Silicon NPN Power Transistor 2SD1887 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.17. Size:210K inchange semiconductor
2sd1888.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1888 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 2A) FE CE C Complement to Type 2SB1339 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RA
8.18. Size:216K inchange semiconductor
2sd1886c.pdf 
isc Silicon NPN Power Transistor 2SD1886C DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
8.19. Size:216K inchange semiconductor
2sd1884.pdf 
isc Silicon NPN Power Transistor 2SD1884 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.20. Size:215K inchange semiconductor
2sd1880.pdf 
isc Silicon NPN Power Transistor 2SD1880 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )
Другие транзисторы: 2SC4848, 2SC4850, 2SC5128, 2SC5696, 2SC5887, 2SCR586D3, 2SD1047E, 2SD133, 2222A, 2SD2328, 2SD2397, 2SD2422, 2SD2490, 2SD2524, 2SD2593, 2SD2633, 2SD476N
