Биполярный транзистор BU2523AX - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BU2523AX
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7.5 V
Макcимальный постоянный ток коллектора (Ic): 11 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: SOT399
BU2523AX Datasheet (PDF)
bu2523ax bu2523ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of HDTV receivers and pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage
bu2523ax.pdf
isc Silicon NPN Power Transistor BU2523AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of HDTVreceivers and pc monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
bu2523af bu2523af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of HDTV receivers and pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage
bu2523af.pdf
isc Silicon NPN Power Transistor BU2523AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of HDTVreceivers and pc monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
bu2523df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plasticenvelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM
bu2523dx 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plasticenvelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM
bu2523df.pdf
isc Silicon NPN Power Transistor BU2523DFDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofhigh resolution monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050