2N5551A-Y1. Аналоги и основные параметры
Наименование производителя: 2N5551A-Y1
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: TO92
Аналоги (замена) для 2N5551A-Y1
- подборⓘ биполярного транзистора по параметрам
2N5551A-Y1 даташит
7.1. Size:406K feihonltd
2n5551a.pdf 
MAIN CHARACTERISTICS FEATURES IC 600mA Epitaxial silicon VCEO 160V High switching speed PC 625mW 2N5401A Complementary to 2N5401A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit
8.1. Size:188K motorola
2n5550 2n5551.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 29 04, STYLE 1 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 140 160 Vdc Collector Base Voltage VCBO 160 180 Vdc Emitter B
8.2. Size:53K philips
2n5550 2n5551 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS
8.3. Size:428K st
2n5551hr.pdf 
2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 BVCEO 160 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 5 V - 10 mA > 80 TO-18 LCC-3 3 Hermetic packages 4 ESCC and JANS qualified 1 Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid. The 2N5551HR is a silicon planar NPN transistor spe
8.4. Size:171K fairchild semi
2n5551 mmbt5551.pdf 
June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180 240 in 2N5551 (Test condition IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23
8.5. Size:53K samsung
2n5551.pdf 
2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage VCEO= 160V TO-92 Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Ju
8.6. Size:64K central
2n5550 2n5551.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
8.7. Size:208K mcc
2n5551 to-92.pdf 
MCC Micro Commercial Components TM 2N5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features This device is designed for general purpose high voltage amplifiers NPN General and gas discharge display drivers. Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Tr
8.8. Size:88K onsemi
2n5550 2n5551.pdf 
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Curr
8.9. Size:845K onsemi
2n5551ta 2n5551tfr 2n5551tf 2n5551bu mmbt5551.pdf 
March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking 3S 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Top Mark Package Packing Method 2N5551TA 5551 TO-92 3L Ammo 2N5551TFR 5551 TO-92 3L
8.10. Size:333K onsemi
2n5551 mmbt5551.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.11. Size:207K utc
2n5551.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2N5551G-x-AB3-R SOT-89 B C E Tape
8.12. Size:189K utc
2n5551g.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-
8.13. Size:217K auk
2n5551.pdf 
2N5551 NPN Silicon Transistor Descriptions PIN Connection General purpose amplifier C High voltage application Features B High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage E VCE(sat)=0.5V(MAX.) TO-92 Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551
8.14. Size:249K auk
2n5551n.pdf 
2N5551N Semiconductor Semiconductor NPN Silicon Transistor Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage VCE(sat)=0.5V(MAX.) Complementary pair with 2N5401N Ordering Information Type NO. Marking Package Code 2N5551N 2N5551 TO-9
8.15. Size:249K auk
2n5551cn.pdf 
2N5551CN Semiconductor Semiconductor NPN Silicon Transistor Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage VCE(sat)=0.5V(MAX.) Ordering Information Type NO. Marking Package Code 2N5551CN 2N5551C TO-92N Outline Dimensions unit mm 4.20
8.17. Size:10K semelab
2n5551dcsm.pdf 
2N5551DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 160V CEO 6.22 0.13 A = 1.27 0.13 I = 0.6A C (0.
8.18. Size:31K semelab
2n5551csm.pdf 
2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS 0.51 0.10 (0.02 0.004) 0.31 FEATURES rad. (0.012) SILICON PLANAR EPITAXIAL NPN 3 TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 CECC SCREENING OPTIONS 1.9
8.19. Size:203K secos
2n5551.pdf 
2N5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55 0.2 3.5 0.2 FEATURES * Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.08 0.07 46+0.1 0. 0.1 (1.27 Typ.) 1 Emitter +0.2 1.25 0.2 2 Base 1 2 3 3 Colle
8.20. Size:279K cdil
2n5551.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector
8.21. Size:597K jiangsu
2n5551.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5551 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE General Purpose Switching Application 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Bas
8.22. Size:192K jiangsu
2n5551k.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5551K TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE Equivalent Circuit 2N5551K=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code
8.23. Size:70K kec
2n5551.pdf 
SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=0.2V(Max.
8.24. Size:354K kec
2n5551s.pdf 
SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + A 2.93 0.20 B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 VCBO=180V, VCEO=160V 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 ICBO=50nA(Max.) VCB=120V J 0.13+
8.25. Size:32K kec
2n5551c.pdf 
SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=0.2V(Max.),
8.26. Size:339K kec
2n5551sc.pdf 
SEMICONDUCTOR 2N5551SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L FEATURES High Collector Breakdwon Voltage DIM MILLIMETERS _ + A 2.90 0.1 2 3 VCBO=180V, VCEO=160V B 1.30+0.20/-0.15 C 1.30 MAX Low Leakage Current. 1 D 0.40+0.15/-0.05 ICBO=50nA(Max.) VCB=120V E 2.40+0.30/-0.20 G 1.90 Low Saturatio
8.27. Size:220K lge
2n5551.pdf 
2N5551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V
8.28. Size:386K wietron
2n5551.pdf 
2N5551 NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5551 Unit Collector-Emitter Voltage V CEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 600 mAdc PD Total Device Dissipation T =25 C W A 0.625 Junction Temperature T 150 j C Storage, Temperature Tstg
8.29. Size:52K hsmc
h2n5551.pdf 
Spec. No. HE6219 HI-SINCERITY Issued Date 1992.09.21 Revised Date 2004.12.28 MICROELECTRONICS CORP. Page No. 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92 Complements to PNP Type H2N5401 High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) Absolute Maximum Ratings Maximum Temp
8.30. Size:1058K shenzhen
2n5551.pdf 
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Switching and amplification in high voltage Applications such as telephony 1. EMITTER Low current(max. 600mA) 2. BASE High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parame
8.32. Size:260K can-sheng
2n5551.pdf 
TO-92 Plastic-Encapsulate Transistors TO-92 TO-92 TO-92 TO-92 TRANSISTOR (NPN) 2N5551 TRANSISTOR (NPN) TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES FEATURES FEATURES FEATURES Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage 1. EMlTTER
8.33. Size:759K blue-rocket-elect
2n5551.pdf 
2N5551 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , 2N5401 High voltage, complementary Pair with 2N5401. / Applications General purpose high voltage amplifier. / Equival
8.34. Size:152K semtech
2n5550 2n5551.pdf 
2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C)
8.35. Size:136K first silicon
2n5551.pdf 
SEMICONDUCTOR 2N5551 TECHNICAL DATA 2N5551 TRANSISTOR (NPN) B C FEATURES General Purpose Switching Application DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 0.55 MAX E 1.00 F 1.27 Symbol Parameter Value Unit G 0.85 H 0.45 VCBO Collector-Base Voltage 180 V _ H J 14.00 0.50 + L 2.30 F F VCEO Collector-E
8.36. Size:637K slkor
2n5551.pdf 
2N5551 TO-92 Plastic-Encapsulate Transistors Equivalent Circuit FEATURES General Purpose Switching Application PNP Transistors TO 92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curre
8.37. Size:3188K fuxinsemi
2n5551.pdf 
2N5551 TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER General Purpose Switching Application 2. BASE 3. COLLECTOR Equivalent Circuit 2N5551=Device code 2N XXX=Code 1 E B C ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5551 TO-92 Bulk 1000pcs/Bag 2N5551-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25 unless otherwise
8.38. Size:250K haolin elec
2n5551.pdf 
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO 92 FEATURES Power dissipation PCM 0.625 W Tamb=25 1.EMITTER Collector current ICM 0.6 A 2.BASE Collector-base voltage 3.COLLECTOR V(BR)CBO 180 V 1 2 3 Operating and storage junction temperature range TJ Tstg -55 t
8.40. Size:1536K jsmsemi
2n5551.pdf 
2N5551 NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (2N5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collector-emitter vo
8.41. Size:215K cn cbi
2n5551u.pdf 
2N5551U NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 500 mW O Junction Temperature Tj 150 C O Storage T
Другие транзисторы: ISCN372M, ISCN372N, SSCP005GSB, SJT13009NT, 2N5401B, 2N5401B-Y1, 2N5401B-Y2, 2N5551A, 2SC1815, 2N5551A-Y2, A1013A, A1013A-R, A1013A-O, A1013A-Y, A1013C, A1013C-R, A1013C-O
