A1013A. Аналоги и основные параметры
Наименование производителя: A1013A
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 15 MHz
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO92L
Аналоги (замена) для A1013A
- подборⓘ биполярного транзистора по параметрам
A1013A даташит
..1. Size:358K feihonltd
a1013a.pdf 
MAIN CHARACTERISTICS FEATURES IC -1.0A Epitaxial silicon VCEO -160V High switching speed PC 900mW C2383A Complementary to C2383A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit
9.2. Size:55K fairchild semi
ksa1013.pdf 
KSA1013 Color TV Audio Output Color TV Vertical Deflection Output TO-92L 1 1. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1 A IB Base Current -0.5 A P
9.3. Size:86K samsung
ksa1013.pdf 
KSA1013 PNP EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT TO-92L COLOR TV VERTICAL DEFLECTION OUTPUT ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1 A Base Current IB -0.5 A Collector Dissipation PC 900 W Junction Temperature TJ
9.4. Size:293K mcc
2sa1013-r.pdf 
MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone (818) 701-4933 Fax (818) 701-4939 2SA1013-Y Features Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili
9.5. Size:293K mcc
2sa1013-o.pdf 
MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone (818) 701-4933 Fax (818) 701-4939 2SA1013-Y Features Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili
9.6. Size:293K mcc
2sa1013-y.pdf 
MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone (818) 701-4933 Fax (818) 701-4939 2SA1013-Y Features Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili
9.7. Size:366K onsemi
ksa1013.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.8. Size:104K utc
2sa1013.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.
9.9. Size:369K secos
2sa1013.pdf 
2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92L High Voltage VCEO= -160V G H Large Continuous Collector Current Capability 1Emitter 1 1 1 2Collector 2 2 Complementary to 2SC2383 2 3Base 3 3 3 J A D CLASSIFICATION OF hFE Millimete
9.10. Size:2681K jiangsu
2sa1013.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. BASE FEATURE 1 High voltage 2. COLLECTOR 2 2 3 Large continuous collector current capability 3. EMITTER MARKING 1013 MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltag
9.11. Size:212K lge
2sa1013 to-92mod.pdf 
2SA1013 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 Features 6.200 High voltage VCEO=-160V 8.400 8.800 Large continuous collector current capability 0.900 Complementary to 2SC2383 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted)
9.12. Size:228K lge
2sa1013.pdf 
2SA1013 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 High voltage VCEO=-160V 8.200 0.600 Large continuous collector current capability 0.800 Complementary to 2SC2383 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) 1.270 TYP MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.440 2.640
9.13. Size:293K cystek
bta1013k3.pdf 
Spec. No. C233K3 Issued Date 2013.05.09 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/7 PNP Epitaxial Planar Transistor BTA1013K3 Features Low V , V = -387mV (Typ.) @ I /I =-1A/-100mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-160V CEO Complementary to BTC2383K3 Pb-free lead plating and halogen-free package Symbol Outline B
9.16. Size:240K china
a1013.pdf 
A1013 PNP silicon APPLICATION Color TV Ver.Deflecation Output Applications. Color TV Class B Sound Output Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 V TO-92L 1 Emitter-base voltage VEBO -6 V 1. Emitter 2. Collector 3. Base Collector curr
9.17. Size:305K kexin
2sa1013.pdf 
SMD Type Transistors PNP Transistors 2SA1013 1.70 0.1 Features High voltage Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current
9.20. Size:1618K pjsemi
2sa1013sq-r 2sa1013sq-o 2sa1013sq-q.pdf 
2SA1013SQ PNP Transistor Features SOT-89 High voltage Large continuous collector current capability Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code 2SA1013SQ-R 1013R 1.Base 2SA1013SQ-O 1013O 2SA1013SQ-Y 1013Y 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Va
9.21. Size:342K cn yfw
2sa1013-r 2sa1013-o 2sa1013-y.pdf 
2SA1013 SOT-89 PNP Transistors 3 Features 2 High voltage 1.Base 1 Large continuous collector current capability 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current - Con
9.22. Size:170K inchange semiconductor
2sa1013.pdf 
INCHANGE Semiconductor isc Silicon PNP Transistor 2SA1013 DESCRIPTION High Voltage and High Current Vceo=-160V(Min. Excellent hFE Linearity Low Noise Complement to Type 2SC2383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. AB
Другие транзисторы: SSCP005GSB, SJT13009NT, 2N5401B, 2N5401B-Y1, 2N5401B-Y2, 2N5551A, 2N5551A-Y1, 2N5551A-Y2, A940, A1013A-R, A1013A-O, A1013A-Y, A1013C, A1013C-R, A1013C-O, A1013C-Y, A1015A
