Справочник транзисторов. A1013A

 

Биполярный транзистор A1013A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: A1013A
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.9 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 15 MHz
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: TO92L

 Аналоги (замена) для A1013A

 

 

A1013A Datasheet (PDF)

 ..1. Size:358K  feihonltd
a1013a.pdf

A1013A
A1013A

MAIN CHARACTERISTICS FEATURES IC -1.0A Epitaxial silicon VCEO -160V High switching speed PC 900mW C2383A Complementary to C2383A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

 9.1. Size:209K  toshiba
2sa1013.pdf

A1013A
A1013A

 9.2. Size:55K  fairchild semi
ksa1013.pdf

A1013A
A1013A

KSA1013Color TV Audio OutputColor TV Vertical Deflection OutputTO-92L11. Emitter 2. Collector 3. BasePNP EPITAXIAL SILICON TRANSISTORAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -160 VVEBO Emitter-Base Voltage -6 VIC Collector Current -1 AIB Base Current -0.5 AP

 9.3. Size:86K  samsung
ksa1013.pdf

A1013A
A1013A

KSA1013 PNP EPITAXIAL SILICON TRANSISTORCOLOR TV AUDIO OUTPUTTO-92LCOLOR TV VERTICAL DEFLECTION OUTPUTABSOLUTE MAXIMUM RATINGS (T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -160 VEmitter-Base Voltage VEBO -6 VCollector Current IC -1 ABase Current IB -0.5 ACollector Dissipation PC 900 WJunction Temperature TJ

 9.4. Size:293K  mcc
2sa1013-r.pdf

A1013A
A1013A

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

 9.5. Size:293K  mcc
2sa1013-o.pdf

A1013A
A1013A

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

 9.6. Size:293K  mcc
2sa1013-y.pdf

A1013A
A1013A

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

 9.7. Size:366K  onsemi
ksa1013.pdf

A1013A
A1013A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.8. Size:104K  utc
2sa1013.pdf

A1013A
A1013A

UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTCs advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.

 9.9. Size:369K  secos
2sa1013.pdf

A1013A
A1013A

2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92L High VoltageVCEO= -160V G H Large Continuous Collector Current Capability 1Emitter 1112Collector 22 Complementary to 2SC2383 23Base 333 JA DCLASSIFICATION OF hFE Millimete

 9.10. Size:2681K  jiangsu
2sa1013.pdf

A1013A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. BASE FEATURE 1 High voltage 2. COLLECTOR 2 2 3 Large continuous collector current capability 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltag

 9.11. Size:212K  lge
2sa1013 to-92mod.pdf

A1013A
A1013A

2SA1013 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.800Features6.200High voltage:VCEO=-160V 8.4008.800Large continuous collector current capability 0.900Complementary to 2SC2383 1.1000.4000.60013.80014.2001.500 TYP2.900 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted)

 9.12. Size:228K  lge
2sa1013.pdf

A1013A
A1013A

2SA1013 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.800 High voltage:VCEO=-160V 8.2000.600 Large continuous collector current capability 0.800Complementary to 2SC2383 0.3500.55013.80014.200Dimensions in inches and (millimeters)1.270 TYPMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.4402.640

 9.13. Size:293K  cystek
bta1013k3.pdf

A1013A
A1013A

Spec. No. : C233K3 Issued Date : 2013.05.09 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1013K3Features Low V , V = -387mV (Typ.) @ I /I =-1A/-100mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-160V CEO Complementary to BTC2383K3 Pb-free lead plating and halogen-free package Symbol Outline B

 9.14. Size:926K  blue-rocket-elect
2sa1013t.pdf

A1013A
A1013A

2SA1013T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SC2383T High voltage, large continuous collector current capability, Complementary pair with 2SC2383T. / Applications ,

 9.15. Size:937K  blue-rocket-elect
2sa1013.pdf

A1013A
A1013A

2SA1013 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features ,, 2SC2383 High voltage, large continuous collector current capability, Complementary pair with 2SC2383.. / Applications ,

 9.16. Size:240K  china
a1013.pdf

A1013A

A1013 PNP silicon APPLICATION: Color TV Ver.Deflecation Output Applications. Color TV Class B Sound Output Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VTO-92L1Emitter-base voltage VEBO -6 V1. Emitter 2. Collector 3. BaseCollector curr

 9.17. Size:305K  kexin
2sa1013.pdf

A1013A

SMD Type TransistorsPNP Transistors2SA10131.70 0.1 Features High voltage Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current

 9.18. Size:564K  feihonltd
a1013c.pdf

A1013A
A1013A

MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -165V High switching speed PC 625mW 2SC2383 Complementary to 2SC2383 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

 9.19. Size:476K  fuxinsemi
2sa1013.pdf

A1013A
A1013A

 9.20. Size:1618K  pjsemi
2sa1013sq-r 2sa1013sq-o 2sa1013sq-q.pdf

A1013A
A1013A

2SA1013SQ PNP TransistorFeatures SOT-89 High voltage Large continuous collector current capabilityEquivalent Circuit 2.Collector1.Base 2.Collector 3. EmitterMarking Code : 2SA1013SQ-R : 1013R 1.Base2SA1013SQ-O : 1013O 2SA1013SQ-Y : 1013Y3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Va

 9.21. Size:342K  cn yfw
2sa1013-r 2sa1013-o 2sa1013-y.pdf

A1013A
A1013A

2SA1013 SOT-89 PNP Transistors3 Features2 High voltage1.Base1 Large continuous collector current capability2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -160Collector - Emitter Voltage VCEO -160 VEmitter - Base Voltage VEBO -6Collector Current - Con

 9.22. Size:170K  inchange semiconductor
2sa1013.pdf

A1013A
A1013A

INCHANGE Semiconductorisc Silicon PNP Transistor 2SA1013DESCRIPTIONHigh Voltage and High CurrentVceo=-160V(Min.Excellent hFE LinearityLow NoiseComplement to Type 2SC2383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.AB

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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