C2655B-G - описание и поиск аналогов

 8.1. Size:333K  feihonltd
 c2655b.pdf 

 9.1. Size:167K  toshiba
 2sc2655o 2sc2655y.pdf 

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum

 9.2. Size:148K  toshiba
 2sc2655.pdf 

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum

 9.3. Size:385K  mcc
 2sc2655l-o.pdf 

MCC Micro Commercial Components TM 2SC2655L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temper

 9.4. Size:385K  mcc
 2sc2655l-y.pdf 

MCC Micro Commercial Components TM 2SC2655L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temper

 9.5. Size:405K  mcc
 2sc2655-o.pdf 

MCC Micro Commercial Components TM 2SC2655-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temperat

 9.6. Size:405K  mcc
 2sc2655-y.pdf 

MCC Micro Commercial Components TM 2SC2655-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temperat

 9.7. Size:281K  utc
 2sc2655l-o 2sc2655l-y.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)= 0.5V (Max.) * High speed switching time TSTG=1.0 s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SC2655Gx-AB3-R SOT-89 B C E Tape Reel -

 9.8. Size:345K  utc
 2sc2655.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)= 0.5V (Max.) * High speed switching time TSTG=1.0 s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2655L-x-AB3-R 2SC2655G-x-AB3-R SOT-89 B C E T

 9.9. Size:212K  secos
 2sc2655.pdf 

2SC2655 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Low saturation voltage VCE(sat)=0.5V(Max)(IC=1A) A D High speed switching time tstg=1 s(Typ.) B Complementary to 2SA1020 K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SC2655-O

 9.10. Size:200K  cdil
 csa1020 csc2655.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS CSA1020 PNP CSC2655 NPN TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 50 V VCBO Collector Base Voltage 50 V VEBO Emitter Base Voltage 5V IC

 9.11. Size:11940K  jiangsu
 2sc2655.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC T TO-92L 2SC2655 TRANSISTOR (NPN) FEATURES 1.EMITTER Low Saturation Voltage VCE(sat)=0.5V(Max)(IC=1A) 2.COLLECTOR High Speed Switching Time tstg=1 s(Typ.) Complementary to 2SA1020 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Symbol Unit VCB

 9.12. Size:251K  lge
 2sc2655 to-92l.pdf 

2SC2655 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low saturation voltage VCE(sat)=0.5V(Max)(IC=1A) 7.800 High speed switching time tstg=1 s(Typ.) 8.200 Complementary to 2SA1020 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350 Symbol Parameter Symbol Units 0.550 13.800 VCBO Collector-Base Vo

 9.13. Size:276K  lge
 2sc2655 to-92mod.pdf 

2SC2655 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 1 2 2.COLLECTOR 3 3.BASE Features 5.800 Low saturation voltage VCE(sat)=0.5V(Max)(IC=1A) 6.200 High speed switching time tstg=1 s(Typ.) Complementary to 2SA1020 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 Symbol Parameter Symbol Units 0.400 0.600 VCBO Collector-Base Voltag

 9.14. Size:277K  wietron
 2sc2655.pdf 

2SC2655 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=100 A,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO V Ic=10mA,IB=0 50 Emitter-base breakdown voltag

 9.15. Size:284K  cystek
 btc2655k3.pdf 

Spec. No. C602K3 Issued Date 2011.12.21 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60V BTC2655K3 IC 2A RCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating packa

 9.16. Size:261K  cystek
 btc2655s3.pdf 

Spec. No. C602S3 Issued Date 2012.04.12 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 50V BTC2655S3 IC 2A RCESAT(max) 300m Features High breakdown voltage, BV 50V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating package Symbo

 9.17. Size:304K  can-sheng
 c2655-92l.pdf 

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2655 TRANSISTOR (NPN) FEATURES 1.EMITTER Low saturation voltage VCE(sat)=0.5V(Max)(IC=1A) 2.COLLECTOR High speed switching time tstg=1 s(Typ.) Complementary to 2SA1020 3.BASE MAXIMUM RATINGS (TA=25 unless oth

 9.18. Size:1426K  blue-rocket-elect
 2sc2655.pdf 

2SC2655 Rev.F Sep.-2017 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features , , 2SA1020 Low saturation voltage, high speed switching time, complementary to 2SA1020. / Applications , Power amplifier and

 9.19. Size:133K  china
 3sc2655.pdf 

3DD2655(3SC2655) NPN A B C D E PCM Tc=75 0.9 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 111 /W IC=0.2A V(BR)CBO ICB=0.1mA 20 35 50 80 120 V V(BR)CEO ICE=0.1mA 20 35 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 20 A

 9.20. Size:156K  first silicon
 ftc2655 to92l.pdf 

SEMICONDUCTOR FTC2655 TECHNICAL DATA FEATURES Low Saturation Voltage VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time tstg=1 s(Typ.) Complementary to FTA1020 TO-92L MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. EMITTER Symbol Parameter Symbol Unit 2. COLLECTOR VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V 3. BASE VEBO Emitter-Bas

 9.21. Size:279K  feihonltd
 c2655a.pdf 

TRANSISTOR C2655A MAIN CHARACTERISTICS FEATURES IC 2A Epitaxial silicon VCEO 50V High switching speed PC 0.9W A1020 Complementary to A1020 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

 9.22. Size:204K  inchange semiconductor
 2sc2655.pdf 

isc Silicon NPN Pow Transistor 2SC2655 DESCRIPTION Silicon NPN epitaxial type Low saturation voltage Complementary to 2SA1020 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V