Справочник транзисторов. C9013B-E

 

Биполярный транзистор C9013B-E - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: C9013B-E
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.625 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 78
   Корпус транзистора: TO92

 Аналоги (замена) для C9013B-E

 

 

C9013B-E Datasheet (PDF)

 8.1. Size:335K  feihonltd
c9013b.pdf

C9013B-E
C9013B-E

TRANSISTOR C9013B MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 20V High switching speed VCBO 40V C9012 Complementary to C9012 PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

 9.1. Size:59K  kec
ktc9013.pdf

C9013B-E
C9013B-E

SEMICONDUCTOR KTC9013TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity. Complementary to KTC9012.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollect

 9.2. Size:350K  kec
ktc9013sc.pdf

C9013B-E
C9013B-E

SEMICONDUCTOR KTC9013SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESExcellent hFE Linearity.Complementary to KTC9012SC.DIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90MAXIMUM RATING (Ta=25)J 0.10K 0.00 ~ 0.10CHARACTERISTIC SYMBO

 9.3. Size:353K  kec
ktc9013s.pdf

C9013B-E
C9013B-E

SEMICONDUCTOR KTC9013STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+Excellent hFE Linearity. A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9012S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)L

 9.4. Size:84K  usha
2sc9013.pdf

C9013B-E
C9013B-E

Transistors2SC9013Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor

 9.5. Size:319K  cystek
btc9013a3.pdf

C9013B-E
C9013B-E

Spec. No. : C203A3 Issued Date : 2014.02.17 CYStech Electronics Corp.Revised Date : 2014.02.24 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3Description The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 50mV(typ.) at I /I = 100mA/10mA,

 9.6. Size:96K  first silicon
ftc9013s.pdf

C9013B-E
C9013B-E

SEMICONDUCTORFTC9013STECHNICAL DATAXGeneral Purpose TransistorsNPN SiliconFEATURE3We declare that the material of product compliance with RoHS requirements.2ORDERING INFORMATION1DevicePackageShippingSOT-23FTC9013SX SOT 23 FTC9013SX10000/Tape&ReelSOT-233COLLECTORMAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 20

 9.7. Size:601K  feihonltd
c9013-h.pdf

C9013B-E
C9013B-E

TRANSISTOR C9013-H MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 20V High switching speed VCBO 40V C9012 Complementary to C9012 PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top