MMBT2222E - описание и поиск аналогов

 ..1. Size:1907K  eicsemi
 mmbt2222e mmbt2222ae.pdf 

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT2222E / MMBT2222AE NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBT2222E 60 VCBO V MMBT2222AE 75 Collector Emitter Voltage MMBT2222E 30 VCEO V MMBT2222AE 40 Emitter Base Voltage

 6.1. Size:72K  motorola
 mmbt2222awt1rev0.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222AWT1/D Preliminary Information MMBT2222AWT1 General Purpose Transistor Motorola Preferred Device NPN Silicon These transistors are designed for general purpose amplifier applica- tions. They are housed in the SOT 323/SC 70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1

 6.2. Size:181K  motorola
 mmbt2222lt1rev0d.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222LT1/D MMBT2222LT1 General Purpose Transistors * MMBT2222ALT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2222 2222A Unit 2 Collector Emitter Voltage VCEO 30 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 75 Vdc SOT 23 (TO 23

 6.3. Size:253K  motorola
 mmbt2222.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222LT1/D MMBT2222LT1 General Purpose Transistors * MMBT2222ALT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2222 2222A Unit 2 Collector Emitter Voltage VCEO 30 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 75 Vdc SOT 23 (TO 23

 6.4. Size:52K  philips
 mmbt2222a 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Switching and linear amplification.

 6.5. Size:63K  st
 mmbt2222a.pdf 

MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOL

 6.6. Size:136K  fairchild semi
 mmbt2222at.pdf 

September 2008 MMBT2222AT NPN Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B General purpose switching & amplification application Marking A02 SOT-523F Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Colle

 6.7. Size:121K  fairchild semi
 mmbt2222ak.pdf 

MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW

 6.8. Size:174K  fairchild semi
 pn2222a mmbt2222a pzt2222a.pdf 

August 2010 PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value U

 6.9. Size:211K  fairchild semi
 mmbt2222a.pdf 

PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collecto

 6.10. Size:48K  fairchild semi
 mmbt2222.pdf 

MMBT2222 NPN General Purpose Amplifier Sourced from process 19. C E SOT-23 B Mark 1B Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 0.6 A TJ, TSTG Operating and Storage Junction Temperature Range -55

 6.11. Size:338K  nxp
 mmbt2222a.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.12. Size:345K  diodes
 mmbt2222at.pdf 

MMBT2222AT 40V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = 600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals

 6.13. Size:149K  diodes
 mmbt2222alp4.pdf 

MMBT2222ALP4 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case X2-DFN1006-3 Case Material Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu

 6.14. Size:238K  diodes
 mmbt2222a.pdf 

MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Type MMBT2907A Case Material Molded Plastic, Green Molding Compound; Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

 6.15. Size:529K  infineon
 smbt2222a mmbt2222a.pdf 

SMBT2222A/MMBT2222A NPN Silicon Switching Transistor Low collector-emitter saturation voltage 2 3 Complementary type 1 SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1P SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter

 6.16. Size:250K  mcc
 mmbt2222at.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Diss

 6.17. Size:222K  mcc
 mmbt2222at sot-523.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Dissipation Purpose Amplifier Operating and Storage Junction T

 6.18. Size:220K  mcc
 mmbt2222a sot-23.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mA NPN General Operating and Storage Junction Temperature -55 C to +150 C Thermal resistance,Junction to Ambient 500oC/

 6.19. Size:159K  onsemi
 mmbt2222l mmbt2222al smmbt2222al.pdf 

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon www.onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Valu

 6.20. Size:168K  onsemi
 mmbt2222am3.pdf 

MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount http //onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduce

 6.21. Size:134K  onsemi
 mmbt2222alt1g.pdf 

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo

 6.22. Size:114K  onsemi
 mmbt2222att1-d.pdf 

MMBT2222ATT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS (TA = 25

 6.23. Size:123K  onsemi
 mmbt2222att1g.pdf 

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

 6.24. Size:123K  onsemi
 nsvmmbt2222att1g.pdf 

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

 6.25. Size:123K  onsemi
 mmbt2222att3g.pdf 

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

 6.26. Size:134K  onsemi
 mmbt2222alt3g.pdf 

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo

 6.27. Size:151K  onsemi
 mmbt2222am3t5g.pdf 

MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount www.onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR Features 3 Reduces B

 6.28. Size:125K  onsemi
 mmbt2222awt1g smmbt2222awt1g.pdf 

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

 6.29. Size:119K  onsemi
 mmbt2222att1g nsvmmbt2222att1g.pdf 

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

 6.30. Size:126K  onsemi
 mmbt2222lt1-alt1.pdf 

MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2 MMBT2222LT1G 30 MMBT2222ALT1G 40 EMITTER Collector-Base Voltage VCBO Vdc MMBT2222LT1G 60 3 MMBT2222ALT1G 75

 6.31. Size:129K  onsemi
 mmbt2222awt1g.pdf 

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

 6.32. Size:129K  onsemi
 mmbt2222awt3g.pdf 

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

 6.33. Size:134K  onsemi
 mmbt2222lt1g.pdf 

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo

 6.34. Size:121K  onsemi
 mmbt2222awt1-d.pdf 

MMBT2222AWT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symbo

 6.35. Size:305K  utc
 mmbt2222a.pdf 

UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 3 3 AMPLIFIER 1 1 2 2 FEATURES SOT-23 SOT-323 (JEDEC TO-236) * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 1 2 SOT-523 DFN1006-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing 1 2 3 MMBT

 6.36. Size:1169K  no
 mmbt2222w.pdf 

 6.37. Size:809K  secos
 mmbt2222at.pdf 

MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim

 6.38. Size:278K  secos
 mmbt2222a.pdf 

MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES A COLLECTOR L Epitaxial Planar Die Construction 3 3 3 Complementary PNP Type Available S Top View B (MMBT2907A) 1 1 1 2 Ideal for Medium Power Amplification and BASE 2 Switching V G 2 EMITTER C H J D K MAXIMUM

 6.39. Size:251K  secos
 mmbt2222q.pdf 

MMBT2222Q NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-89 1.BASE D Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR D1 Symbol A Min Max Min Max 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 FEATURES b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 b1 Power d

 6.40. Size:1362K  secos
 mmbt2222aw.pdf 

MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary PNP Type Available(MMBT2907AW) A L Epitaxial Planar Die Construction 3 3 Ideal for Medium Power Amplification and Switching Top View C B 1 1 2 2 K E D MARKING CODE H J F G MM

 6.41. Size:393K  taiwansemi
 mmbt2222a.pdf 

MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 75 V High surge current capability VCEO 40 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21

 6.42. Size:645K  jiangsu
 mmbt2222am.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors MMBT2222AM TRANSISTOR (NPN) SOT-723 FEATURES 3 3 Epitaxial planar die construction Complementary PNP Type available(MMBT2907AM) 1 1. BASE 2 2.EMITTER MARKING 1P 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V

 6.43. Size:4328K  jiangsu
 mmbt2222at.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT2907AT Small Package MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL

 6.44. Size:914K  jiangsu
 mmbt2222a.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40

 6.45. Size:79K  zovie
 mmbt2222agh.pdf 

Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 MMBT2222AGH 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Char

 6.46. Size:1629K  htsemi
 mmbt2222a.pdf 

MMBT2222A TRANSISTOR(NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC Collector Current -C

 6.47. Size:602K  htsemi
 mmbt2222.pdf 

MMBT2222 TRANSISTOR(NPN) SOT 23 FEATURES Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 75 V CBO 2. EMITTER V Collector-Emitter Voltage 30 V CEO 3. COLLECTOR V Emitter-Base Voltage 6 V EBO IC Collector Current 600 mA P Collector Power Dissipation 250 mW C R Thermal R

 6.48. Size:319K  gsme
 mmbt2222.pdf 

 6.49. Size:1000K  lge
 mmmbt2222a sot-23.pdf 

MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit

 6.50. Size:1684K  lge
 mmbt2222alt1.pdf 

MMBT2222ALT1 NPN General Purpose Amplifier 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10 E B 1.10 1.50 Complementary PNP type available K B C 1.0 Typical MMBT2907A. D 0.4 Typical E 0.35 0.48 J D Ultra-small surface mount package. G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 APPLICATIO

 6.51. Size:417K  wietron
 mmbt2222at.pdf 

MMBT2222AT COLLECTOR Plastic-Encapsulate Transistors 3 3 NPN Silicon 1 2 1 BASE P b Lead(Pb)-Free SC-89 2 EMITTER (SOT-523F) MAXIMUM RATINGS Value Rating Symbol Unit 40 Collector-Emitter Voltage V CEO Vdc 75 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Unit Ma

 6.52. Size:569K  wietron
 mmbt2222.pdf 

MMBT2222 MMBT2222A 3 1 2 SOT-23 VCEO u WEITRON http //www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS - DC Current Gain hFE (IC=0.1 mAdc, VCE=10 Vdc) 35 - (IC=1.0 mAdc, VCE=10 Vdc) 50 - - (IC=10 mAdc, VCE=10 Vdc) 75 - 35 (IC=10 mAdc, VCE=10 Vdc, TA=-

 6.53. Size:407K  wietron
 mmbt2222aw.pdf 

MMBT2222AW 3 1 2 SOT-323(SC-70) Value VCEO 150 833 T ,Tstg -55 to+150 J MMBT2222AW=P1 (1) u 1. Pulse Test Pulse Width 300us, Duty Cycle 2.0% WEITRON http //www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS(1) DC Current Gain - (IC=0.1 mAdc, VCE=10 Vdc) 35 - (

 6.54. Size:290K  willas
 mmbt2222awt1.pdf 

FM120-M WILLAS THRU MMBT2222AWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silic

 6.55. Size:341K  willas
 mmbt2222adw1t1.pdf 

FM120-M MMBT2222ADW1T1 WILLAS THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to o

 6.56. Size:357K  willas
 mmbt2222att1.pdf 

FM120-M WILLAS THRU MMBT2222ATT1 General Purpose T BARRIER RECTIFIERS -20V- 200V ransistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d NPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H Low profile surface mounted application in order

 6.57. Size:385K  willas
 mmbt2222-a-lt1.pdf 

FM120-M WILLAS THRU MMBT2222(A)LT1 FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features NPN Batch process design, excellent power dissipation offers Silicon better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in orde

 6.58. Size:282K  shenzhen
 mmbt2222a.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V

 6.59. Size:276K  cystek
 mmbt2222a.pdf 

Spec. No. C203N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222A Description The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

 6.60. Size:202K  can-sheng
 mmbt2222 sot-23.pdf 

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING 1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

 6.61. Size:836K  blue-rocket-elect
 mmbt2222a.pdf 

MMBT2222A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 600mA Collector currents up to 600 mA. / Applications General purpose amplifier. / Equivalent Circuit

 6.62. Size:248K  semtech
 mmbt2222 mmbt2222a.pdf 

MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector Curr

 6.63. Size:146K  first silicon
 mmbt2222altg.pdf 

MMBT2222LTG,MMBT2222ALTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Ordering Information 1 Device Package Shipping MMBT2222LTG SOT 23 3000/Tape & Reel 2 MMBT2222ALTG SOT 23 3000/Tape & Reel SOT 23 Maximum Ratings Rating Symbol 2222 2222A Unit 3 COLLECTOR Collector Emitter Vo

 6.64. Size:859K  kexin
 mmbt2222at.pdf 

SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2907AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

 6.65. Size:805K  kexin
 mmbt2222a.pdf 

D e s st s NPN Transistors MMBT2222A (KMBT2222A) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 ) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec

 6.66. Size:312K  panjit
 mmbt2222a.pdf 

MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 225 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070

 6.67. Size:197K  panjit
 mmbt2222aw.pdf 

MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 150 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-323, Plastic Te

 6.68. Size:141K  comchip
 mmbt2222a-g.pdf 

Small Signal Transistor MMBT2222A-G (NPN) RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Approx. weight 0

 6.69. Size:141K  comchip
 mmbt2222a-hf.pdf 

Small Signal Transistor MMBT2222A-HF (NPN) RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Ap

 6.70. Size:272K  globaltech semi
 gstmmbt2222a.pdf 

GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1P Ordering Information GS P/N GSTMMBT2222A F Pb Fre

 6.71. Size:510K  slkor
 mmbt2222 mmbt2222a.pdf 

MMBT2222/MMBT2222A FEATURES FEATURES FEATURES FEATURES NPN Switching Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Symbol Unit Characteristic MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO Collector-Base Voltage V 60 75 Vdc CBO Emitter-Base Voltage V 5.0 6.0 Vdc EBO Collector Current-Continuous Ic 600 600 mAdc THERMAL CHARACTERISTI

 6.72. Size:468K  slkor
 mmbt2222aw.pdf 

MMBT2222AW NPN General Purpose Transistor 3 2 1.Base 2.Emitter 3.Collector 1 Features Simplified outline(SOT-323) General purpose transistor. 3.COLLECTOR 1.BASE 2.EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Devic

 6.73. Size:779K  umw-ic
 mmbt2222a.pdf 

R UMW UMW MMBT2222A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) FEATURES 1. BASE Epitaxial planar die construction 2. EMITTER Complementary PNP Type available(MMBT2907A) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO

 6.74. Size:144K  wej
 mmbt2222lt1.pdf 

RoHS MMBT2222LT1 SOT-23 TRANSISTOR Description SOT-23 Dimensions(Unit mm) Medium Power Amplifier. NPN Silicon Transistor. 2.3 0.2 1.3 0.2 0.5Ref. hFE RANK 0.5Ref. Features Large collector current ICmax=600mA 2 3 Low collector saturation voltage 1P enabling low voltage operation 1 Complementary pair with . Type Name 0.38Ref. MINO.1 0.01-0.10 1.EMITTER 2.BASE

 6.75. Size:1261K  born
 mmbt2222a.pdf 

MMBT2222A Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Features SOT-23 Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V 1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITT

 6.76. Size:620K  fuxinsemi
 mmbt2222a.pdf 

 6.77. Size:710K  fms
 mmbt2222 mmbt2222a.pdf 

SMD NPN Transistor Formosa MS MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 40V@I =10mA) CEO C Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 225mW pow

 6.78. Size:2302K  high diode
 mmbt2222a.pdf 

MMBT2222A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) Marking 1P Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO C I Collector Current 600 mA C P Collector Power D

 6.79. Size:988K  jsmsemi
 mmbt2222a.pdf 

MMBT2222A NPN General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package. MSL 1 APPLICATIONS Use as a medium power amplifier. Switching requiring collector currents up to 500mA. SOT-23 MAXIMUM RA TING @ Ta=25 unless otherwise specified Symbol Parameter Valu

 6.80. Size:1007K  mdd
 mmbt2222a.pdf 

Jiangsu Yutai Electronics Co.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Vo

 6.81. Size:4241K  msksemi
 mmbt2222a-ms.pdf 

www.msksemi.com MMBT2222A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A- MS) 1. BASE MARKING 1P 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Em

 6.82. Size:290K  powersilicon
 mmbt2222a.pdf 

DATA SHEET MMBT2222A GENERAL PURPOSE TRANSISTOR NPN CURRENT 600 mA POWER 300 mW FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE MMBT2907/A LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINAL SOLDERABLE PER MIL-STD-220G, METHOD 208 APPROX. WEIGHT 0.008 GRAMS CASE SOT-23 MAXIMUM RATINGS

 6.83. Size:443K  pjsemi
 mmbt2222 mmbt2222a.pdf 

MMBT2222/MMBT2222A NPN Silicon Epitaxial Planar Transistor SOT-23 Features For switching and amplifier applications 3 1 2 1.B 2.E 3.C Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector

 6.84. Size:930K  cn salltech
 mmbt2222a-l mmbt2222a-h.pdf 

 6.85. Size:795K  cn shandong jingdao microelectronics
 mmbt2222a-l mmbt2222a-h.pdf 

Jingdao Microelectronics co.LTD MMBT2222A MMBT2222A SOT-23 NPN TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 75 V 2.EMITTER Collector Emitte

 6.86. Size:1707K  cn shikues
 mmbt2222 mmbt2222a.pdf 

 6.87. Size:1943K  wpmtek
 mmbt2222a-l mmbt2222a-h.pdf 

 6.88. Size:407K  cn yfw
 mmbt2222a.pdf 

MMBT2222A SOT-23 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector ) Simplified outline(SOT-23) Mrarking Marking 1P Absolute Maximum Ratin gs Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Power Dissipation PD

 6.89. Size:839K  cn yongyutai
 mmbt2222.pdf 

MMBT2222 SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING 1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 75 V VCEO Collector-Emitter Voltage -

 6.90. Size:1660K  cn twgmc
 mmbt2222a.pdf 

MMBT2222A AO3400 SI2305 MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage

 6.91. Size:320K  cn yangzhou yangjie elec
 mmbt2222a.pdf 

RoHS RoHS COMPLIANT COMPLIANT MMBT2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flamm

 6.92. Size:276K  cn yangzhou yangjie elec
 mmbt2222aq.pdf 

RoHS RoHS COMPLIANT COMPLIANT MMBT2222AQ NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case SOT-23 Terminals Tin plated lead

 6.93. Size:1092K  cn doeshare
 mmbt2222a.pdf 

MMBT2222A MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT2907A Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT2222A 1P . Maximu

 6.94. Size:450K  cn cbi
 mmbt2222a.pdf 

MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curren

 6.95. Size:828K  cn fosan
 mmbt2222a.pdf 

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT2222A FEATURES NPN Switching Transistor MAXIMUM RATINGS Characteristic Symbol Unit MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO - Collector-Base Voltage V 60 75 Vdc CBO -

 6.96. Size:2010K  cn goodwork
 mmbt2222a.pdf 

MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 75Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.6A. ansition frequency fT>250MHz @ Tr IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S

 6.97. Size:728K  cn hottech
 mmbt2222a.pdf 

MMBT2222A BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT2907A Epitaxial planar die construction Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit C

 6.98. Size:706K  cn xch
 mmbt2222a.pdf 

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A SOT-23 C Dim Min Max A 0.37 0.51 B C 1.20 1.40 B TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 K 0.903