MMBT2045SOT-23-6LPlastic-Encapsulate Transistors Dual 40V complementary transistorsFEATURESSOT-23-6L 40V complementary device High hFE Mounting cost and area can be cut in half MARKINGEQUIVALENT CIRCUIT PIN1Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25) Value Symbol Parameter Unit NPN PNPVCBO Collector-Base Voltage 40 -40 V VCEX Collector-Emitter Vo

PN200 MMBT200PN200A MMBT200ACEC TO-92SOT-23 BBEMark: N2 / N2APNP General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 V

PN200A / MMBT200PNP General-Purpose AmplifierDescriptionThis device is designed for general-purpose amplifierapplications at collector currents to 300 mA. Sourcedfrom Process 68.CETO-92BSOT-23EBCFigure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering InformationPart Number Marking Package Packing MethodPN200A PN200A TO-92 3L BulkMMBT200 N2 SOT-2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2484LT1/DLow Noise TransistorMMBT2484LT1COLLECTORNPN Silicon31BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 60 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO 6.0 VdcCollector Current

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2369LT1/DMMBT2369LT1Switching Transistors COLLECTOR*MMBT2369ALT13NPN Silicon*Motorola Preferred Device1BASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value Unit1CollectorEmitter Voltage VCEO 15 Vdc2CollectorEmitter Voltage VCES 40 VdcCollectorBase Voltage VCBO 40 Vdc CASE 31808, STYL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222AWT1/DPreliminary InformationMMBT2222AWT1General Purpose TransistorMotorola Preferred DeviceNPN SiliconThese transistors are designed for general purpose amplifier applica-tions. They are housed in the SOT323/SC70 package which isdesigned for low power surface mount applications.COLLECTOR3311

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222LT1/DMMBT2222LT1General Purpose Transistors*MMBT2222ALT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2222 2222A Unit2CollectorEmitter Voltage VCEO 30 40 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 75 VdcSOT23 (TO23

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907LT1/DMMBT2907LT1General Purpose Transistors*MMBT2907ALT1COLLECTORPNP Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2907 2907A Unit2CollectorEmitter Voltage VCEO 40 60 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 VdcSOT23 (T

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222LT1/DMMBT2222LT1General Purpose Transistors*MMBT2222ALT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2222 2222A Unit2CollectorEmitter Voltage VCEO 30 40 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 75 VdcSOT23 (TO23

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907LT1/DMMBT2907LT1General Purpose Transistors*MMBT2907ALT1COLLECTORPNP Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2907 2907A Unit2CollectorEmitter Voltage VCEO 40 60 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 VdcSOT23 (T

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907AWT1/DPreliminary InformationMMBT2907AWT1General Purpose TransistorPNP SiliconMotorola Preferred DeviceThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT323/SC70 packagewhich is designed for low power surface mount applications.COLLECTOR3311

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT2222ANPN switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN switching transistor MMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Switching and linear amplification.

MMBT2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingMMBT2222A M22 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISMMBT2907AAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOL

MMBT2907ASMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingMMBT2907A M29 SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE ISMMBT2222AAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOL

MMBT2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.CESOT-23BMark: 1JAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 4.5 V

Discrete POWER & SignalTechnologiesPN2907 MMBT2907CEC TO-92BBE SOT-23Mark: 2BPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVC

September 2008MMBT2222ATNPN Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B General purpose switching & amplification application Marking : A02 SOT-523FAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCBO Collector-Base Voltage 75 VVCEO Colle

MMBT2222AKNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking31PK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipation 350 mW

August 2010PN2222A / MMBT2222A / PZT2222ANPN General Purpose AmplifierFeatures This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value U

MMBT2907AKPNP Epitaxial Silicon TransistorGeneral Purpose TransistorMarking32FK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 VVEBO Emitter-Base Voltage -5 VIC Collector Current -600 mAPC Collector Power Dissipation 350

PN2907A MMBT2907A PZT2907ACCEECBC TO-92BSOT-23B SOT-223EMark: 2FPNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 63.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO C

PN2484 MMBT2484CEC TO-92SOT-23 BBEMark: 1UNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1 to 50 mA.Sourced from Process 07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Volt

February 2008MMBT2369 / PN2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.MMBT2369 PN2369CESOT-23BTO-921Mark: 1J1. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emit

PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCNPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collecto

MMBT2222NPN General Purpose Amplifier Sourced from process 19.CESOT-23BMark: 1BAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 0.6 ATJ, TSTG Operating and Storage Junction Temperature Range -55

PN2369A MMBT2369ACEC TO-92BSOT-23BEMark: 1SNPN Switching TransistorThis device is designed for high speed saturated switching at collectorcurrents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vo

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

MMBT2907AT 60V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -60V Case: SOT523 Case Material: Molded Plastic, Green Molding Compound. IC = -600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminal

MMBT2222AT 40V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = 600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:

MMBT2222ALP440V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu

MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Type: MMBT2907A Case Material: Molded Plastic, Green Molding Compound; Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

MMBT2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Low Power Amplification and Switching Case Material: Molded Plastic, Green Compound; Complementary NPN Type: MMBT2222A UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) M

SMBT2222A/MMBT2222ANPN Silicon Switching Transistor Low collector-emitter saturation voltage23 Complementary type: 1 SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBT2222A/MMBT2222A s1P SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter

SMBT2907A/MMBT2907APNP Silicon Switching Transistor Low collector-emitter saturation voltage23 Complementary type: 1 SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBT2907A/MMBT2907A s2F SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit60 VCollector-emitter

MMBT2907ATFeatures Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral PurposeCompliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise SpecifiedSOT-523 Operating Junction Temperature Range: -55 to

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power Diss

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT2907AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 350mWatts of Pd, 600mA continuous collector current.PNP General Operatingand Storage JunctionT

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power DissipationPurpose Amplifier Operating and Storage Junction T

MMBT2907AFeatures Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral PurposeCompliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -5

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT2222AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mANPN General Operating and Storage Junction Temperature: -55C to +150C Thermal resistance,Junction to Ambient:500oC/

MMBT2369L, MMBT2369ALSwitching TransistorsNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andMARKINGPPAP CapableDIAGRAM These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23xxx MGCASE 318GSTYLE 6MAXIMUM RATINGS1Rating Symbo

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconwww.onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASE2MAXIMUM RATINGSEMITTERRating Symbol Valu

MMBT2484LT1GLow Noise TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 60 VdcCollector-Base Voltage VCBO 60 Vdc2Emitter-Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CH

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mounthttp://onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.FeaturesCOLLECTOR3 Reduce

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT2222ATT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGS (TA = 25

MMBT2907AM3T5GPNP General PurposeTransistorThe MMBT2907AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mounthttp://onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.FeaturesCOLLECTOR3 Reduce

MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures 3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Re

MMBT2907ALT1GGeneral Purpose TransistorsPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -60 VdcCollector-Base Voltage VCBO -60 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -600 mAdc

MMBT2907AL,SMMBT2907ALGeneral Purpose TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitCo

MMBT2484LT1GLow Noise TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 60 Vdc2Collector-Base Voltage VCBO 60 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 100 mAdc3THERMAL C

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mountwww.onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.COLLECTORFeatures3 Reduces B

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MMBT2132T3General PurposeTransistorsNPN Bipolar Junction Transistorhttp://onsemi.comFeatures Pb-Free Package is Available0.7 AMPSMAXIMUM RATINGS (TC = 25C unless otherwise noted)30 VOLTS - V(BR)CEORating Symbol Value Unit342 mWCollector-Emitter Voltage VCEO 30 VCollector-Base Voltage VCBO 40 VCOLLECTORPINS 2, 5Emitter-Base Voltage VEBO 5.0 VBASECollector

MMBT2484LT1GLow Noise TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 60 VdcCollector-Base Voltage VCBO 60 Vdc2Emitter-Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CH

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBT2222LT1G,MMBT2222ALT1GGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2MMBT2222LT1G 30MMBT2222ALT1G 40 EMITTERCollector-Base Voltage VCBO VdcMMBT2222LT1G 603MMBT2222ALT1G 75

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

MMBT2369LT1G,SMMBT2369LT1G,MMBT2369ALT1G,SMMBT2369ALT1GSwitching Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*COLLECTOR3M

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

MMBT2907AL,SMMBT2907ALGeneral Purpose TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value Unit

MMBT2907AM3T5GPNP General PurposeTransistorThe MMBT2907AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mountwww.onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.FeaturesCOLLECTOR3 Reduces B

MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requ

MMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symb

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBT2131T1General PurposeTransistorsPNP Bipolar Junction Transistor(Complementary NPN Device: MMBT2132T1/T3)http://onsemi.comNOTE: Voltage and Current are negative for the PNP Transistor.0.7 AMPERESFeatures30 VOLTS - V(BR)CEO Pb-Free Package is Available342 mWMAXIMUM RATINGS (TC = 25C unless otherwise noted)COLLECTORRating Symbol Value UnitPINS 2, 5Collector

MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures 3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Re

MMBT2369LT1G,MMBT2369ALT1GSwitching TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 15 Vdc2EMITTERCollector-Emitter Voltage VCES 40 VdcCollector-Base Voltage VCBO 40 VdcEmitter-Base Voltage VEBO 4.5 Vd

MMBT2369LT1G,SMMBT2369LT1G,MMBT2369ALT1G,SMMBT2369ALT1GSwitching Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*COLLECTOR3M

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

MMBT2907AL,SMMBT2907ALGeneral Purpose TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value Unit

MMBT2222AWT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symbo

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 33AMPLIFIER 1122 FEATURES SOT-23SOT-323(JEDEC TO-236)* This device is for use as a medium power amplifier and switchrequiring collector currents up to 600mA. 3112SOT-523 DFN1006-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing 1 2 3MMBT

UNISONIC TECHNOLOGIES CO., LTD MMBT2907A PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT2907AG-AE3-R SOT-23 E B C Tape ReelMMBT2907AG-AL3-R SOT-323 E

MMBT2222ANPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with MMBT2907A SOT-23 Ordering Information Type NO. Marking Package Code 1P MMBT2222A SOT-23 Device

MMBT2907APNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features 3 Low Leakage current 1 Low collector saturation voltage enabling 2low voltage operation SOT-23 Complementary pair with MMBT2222A Ordering Information Type NO. Marking Package Code 2F MMBT2907A SOT-23

MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Complementary NPN Type Available(MMBT2222AW)33 Epitaxial Planar Die Construction Top View C B Ideal for Medium Power Amplification and Switching 11 22K EDCOLLECTORH JF G3M

MMBT2907QPNP Silicon Elektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductDD1A* FeaturesSOT-89 b11Power dissipation2bCeO3PCM : 1.25 W (Temp.= 25 C)e11.B AS ECollector currentDimensions In Millimeters Dimensions In Inches2.C OLLE C T ORSymbolICM : -0.6 A3 Min Max Min Max3.E MIT T E RA 1.400 1.600 0.055 0.063Collector

MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim

MMBT2907FW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 AL3FEATURES 3Top View C B Epitaxial Planar Die Construction 11 2 Complementary NPN Type Available(MMBT2222FW) 2K ECollector Ideal for Medium Power Amplification and Switching DMAR

MMBT2222ANPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESACOLLECTOR L Epitaxial Planar Die Construction333 Complementary PNP Type AvailableSTop ViewB(MMBT2907A)111 2 Ideal for Medium Power Amplification andBASE 2SwitchingV G2EMITTERCHJDKMAXIMUM

MMBT2222QNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-89 1.BASED Dimensions In Millimeters Dimensions In Inches2.COLLECTORD1SymbolAMin Max Min Max 3.EMITTERA 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020FEATURESb1 0.360 0.560 0.014 0.022c 0.350 0.440 0.014 0.017D 4.400 4.600 0.173 0.181b1Power d

MMBT2907APNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductFEATURESA suffix of "-C" specifies halogen & lead-free Epitaxial Planar Die Construction Complementary NPN Type AvailableA(MMBT2222A)COLLECTOR L Ideal for Medium Power Amplification and333SwitchingSTop ViewB111 2BASE 2V G2EMITTERCHJDKMAXIMUM

MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURE Complementary PNP Type Available(MMBT2907AW) AL Epitaxial Planar Die Construction 33 Ideal for Medium Power Amplification and Switching Top View C B11 22K EDMARKING CODE H JF GMM

MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 75 V High surge current capability VCEO 40 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21

MMBT2907A350mW, PNP Small Signal TransistorSmall Signal ProductFeatures SOT-23 Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" onpacking code and prefix "G" on date codeMechanical

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate TransistorsMMBT2907AT TRANSISTOR (PNP)FEATURES SOT523 Complementary to NPN Type (MMBT2222AT) Small PackageMARKING:2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASEVCBO Collector-Base Voltage -60 V 2. EMITTERVCEO Collector-Emitter Voltage -60 V 3. CO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate TransistorsMMBT2222AM TRANSISTOR (NPN)SOT-723 FEATURES33 Epitaxial planar die construction Complementary PNP Type available(MMBT2907AM)11. BASE22.EMITTERMARKING: 1P 3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT2907AT Small Package MARKING:1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking: 2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconHalogen-free typeLead free productCOLLECTOR33BASE1MMBT2222AGH 122SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSChar

Zowie Technology CorporationGeneral Purpose TransistorPNP SiliconHalogen-free typeLead free productCOLLECTOR33BASE1MMBT2907AGH 122SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO -60 VdcCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous IC -600 mAdcTHERMAL CHARACTERISTICS

MMBT2222ATRANSISTOR(NPN)SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 VEmitter-Base Voltage IC Collector Current -C

MMBT2222TRANSISTOR(NPN)SOT23 FEATURES Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 75 V CBO2. EMITTER V Collector-Emitter Voltage 30 V CEO3. COLLECTOR V Emitter-Base Voltage 6 V EBOIC Collector Current 600 mA P Collector Power Dissipation 250 mW CR Thermal R

MMBT2907A TRANSISTPR(PNP)SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking: 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2907 GM2907AMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGM2907 GM2907A Collector-Emitter VoltageVCEO -40 -60 Vdc-

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2222 GM2222AMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGM2222 GM2222A Collector-Emitter VoltageVCEO 30 40 Vdc-

MMBT2907A SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesEpitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emit

MMBT2222A SOT-23 Transistor(NPN)SOT-231. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit

MMBT2222ALT1 NPN General Purpose Amplifier1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10EB 1.10 1.50 Complementary PNP type available K BC 1.0 TypicalMMBT2907A. D 0.4 TypicalE 0.35 0.48JD Ultra-small surface mount package. G 1.80 2.00GH 0.02 0.1J 0.1 TypicalHK 2.20 2.60APPLICATIO

MMBT2907A PNP General Purpose Amplifier1. BASE 2. EMITTER3. COLLECTOR A SOT-23 FEATURES Dim Min MaxA 2.70 3.10E Epitaxial planar die construction. B 1.10 1.50K BC 1.0 Typical Complementary NPN type available D 0.4 TypicalE 0.35 0.48JMMBT2222A. DG 1.80 2.00GH 0.02 0.1 Ideal for medium power amplification and switching. J 0.1 TypicalHK 2.20 2.6

MMBT2907ATCOLLECTOR3PNP General Purpose Transistors3112BASE2 SOT-523(SC-75)EMITTERMAXIMUM RATINGSValueRating SymbolUnit-60Collector-Emitter Voltage VCEO Vdc-60Collector-Base Voltage VCBOVdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600THERMAL CHARACTERISTICSCharacteristics SymbolUnitMax(1)Total Device Dissipa

MMBT2907AWCOLLECTOR3PNP General Purpose Transistors31BASE122EMITTERSOT-323(SC-70)MAXIMUM RATINGSValueRating SymbolUnit-60Collector-Emitter Voltage VCEO Vdc-60Collector-Base Voltage VCBOVdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600THERMAL CHARACTERISTICSCharacteristics SymbolUnitMaxTotal Device Dissipation

MMBT2222ATCOLLECTORPlastic-Encapsulate Transistors33NPN Silicon 121BASEP b Lead(Pb)-FreeSC-892EMITTER (SOT-523F)MAXIMUM RATINGSValueRating SymbolUnit40Collector-Emitter Voltage VCEO Vdc75Collector-Base Voltage VCBOVdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteristics SymbolUnitMa

MMBT2907MMBT2907ACOLLECTOR3PNP General Purpose Transistors311BASE2SOT-232EMITTERMAXIMUM RATINGSRating Symbol 29072907A Unit-60Collector-Emitter Voltage V -40CEO VdcCollector-Base Voltage VCBO -60VdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600THERMAL CHARACTERISTICSCharacteristics SymbolUnitMaxTotal Device Dis

MMBT2222MMBT2222A312SOT-23VCEOuWEITRONhttp://www.weitron.com.twMMBT2222MMBT2222AELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICS-DC Current GainhFE(IC=0.1 mAdc, VCE=10 Vdc) 35-(IC=1.0 mAdc, VCE=10 Vdc) 50--(IC=10 mAdc, VCE=10 Vdc) 75-35(IC=10 mAdc, VCE=10 Vdc, TA=-

MMBT2222AW312SOT-323(SC-70)ValueVCEO150833T ,Tstg -55 to+150JMMBT2222AW=P1(1)u1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0%WEITRONhttp://www.weitron.com.twMMBT2222AWELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICS(1)DC Current Gain-(IC=0.1 mAdc, VCE=10 Vdc)35-(

FM120-M WILLASTHRUMMBT2222AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN Silic

FM120-M WILLASTHRUMMBT2907AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HPNP Silicon Low profile surface mounted application in order t

FM120-M WILLASTHRUMMBT2907(A)LT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesPNP Siliconesign, excellent power dissipation offers Batch process d better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order

FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

FM120-M WILLASTHRUMMBT2369(A)LT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSwitching TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures We declare that the material of product compliance with RoHS requirements. Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD

FM120-M WILLAS MMBT2907ADW1T1THRUDual General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to opti

FM120-M WILLASTHRUMMBT2222ATT1General Purpose T BARRIER RECTIFIERS -20V- 200VransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dNPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123H Low profile surface mounted application in order

FM120-M WILLASTHRUMMBT2222(A)LT1FM1200-M General Purpose Transistors1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesNPN Batch process design, excellent power dissipation offersSilicon better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in orde

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking: 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V

Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222ADescription The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

Spec. No. : C305N3 Issued Date : 2002.06.11 CYStech Electronics Corp.Revised Date :2010.07.14 Page No. : 1/ 6 General Purpose PNP Epitaxial Planar Transistor MMBT2907ADescription The MMBT2907A is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC(Max)= -0.6A Low VCE(sat), ideal for low-voltage operation. C

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING:1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2907 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2222 MARKING:2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

MMBT2222A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 600mACollector currents up to 600 mA. / Applications General purpose amplifier. / Equivalent Circuit

MMBT2907A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 600mACollector currents to 600mA. / Applications General purpose amplifier. / Equivalent Circuit / Pinni

MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage MMBT2907 40 -VCEO V MMBT2907A 60 Emitter

MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications TO-236 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector Curr

MMBT2907ALTGPNP Silicon General Purpose TransistorFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish3Maximum Ratings1Rating Symbol 2907A Unit2Collector-Emitter Voltage VCEO -60 VdcCollector-Base Voltage VCBO -60 VdcSOT23Emitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -600 mAdc3COLLECTOR

MMBT2222LTG,MMBT2222ALTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish3Ordering Information1Device Package ShippingMMBT2222LTG SOT23 3000/Tape & Reel 2MMBT2222ALTG SOT23 3000/Tape & ReelSOT23Maximum RatingsRating Symbol 2222 2222A Unit3COLLECTORCollectorEmitter Vo

SMD Type TransistorsPNP TransistorsMMBT2907AT (KMBT2907AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2222AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Col

SMD Type TransistorsNPN TransistorsMMBT2222AT (KMBT2222AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2907AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

D e s st sNPN TransistorsMMBT2222A (KMBT2222A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.131 2 +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.1 )1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec

e s st sPNP TransistorsMMBT2907A (KMBT2907A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.131 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector

MMBT2907AWPNP GENERAL PURPOSE SWITCHING TRANSISTORUnit: inch (mm)SOT-323 POWER 225 mWVOLTAGE 60 VoltsFEATURESPNP epitaxial silicon, planar designCollector-emitter voltage VCE = -60V0.087(2.20)0.070(1.80)Collector current IC = -600mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) 0.054(1.35) Green molding compound as per IEC61249 Std.

MMBT2222ANPN GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 225 mWattVOLTAGEFEATURES NPN epitaxial silicon, planar design0.120(3.04)0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard0.056(1.40)0.047(1.20)0.079(2.00) 0.008(0.20)0.070

MMBT2907APNP GENERAL PURPOSE SWITCHING TRANSISTOR225 mW 60 Volts POWERVOLTAGEFEATURES0.120(3.04)PNP epitaxial silicon, planar design0.110(2.80)Collector-emitter voltage VCE = -60VCollector current IC = -600mA 0.056(1.40)0.047(1.20)MECHANICAL DATA

MMBT2907A-AUPNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWattVOLTAGE 60 VoltFEATURESPNP epitaxial silicon, planar design 0.120(3.04)0.110(2.80)Collector-emitter voltage VCE = -60VCollector current IC = -600mAAEC-Q101 qualifiedLead free in compliance with EU RoHS 2.0 0.056(1.40)Green molding compound as per IEC 61249 standard0.047(1.20)0.079(2.00) 0.008(0.20)

MMBT2222AWNPN GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 150 mWattVOLTAGEFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-323, Plastic Te

General Purpose TransistorMMBT2907A-G (PNP)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction -Device is designed as a general purpose0.118(3.00)0.110(2.80)amplifier and switching.3 -Useful dynamic range exceeds to 600mA0.055(1.40)0.047(1.20) As a switch and to 100MHz as an amplifier.1 20.079(2.00)0.071(1.80)0.006(0.15)0.003(0.08)0.041(1.05)0.

Small Signal TransistorMMBT2222A-G (NPN)RoHS DeviceFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Approx. weight: 0

General Purpose TransistorMMBT2907-G (PNP)RoHS DeviceSOT-23Features -Epitaxial planar die construction0.119 (3.00)0.110 (2.80) -Device is designed as a general purpose3amplifier and switching.0.056 (1.40)0.047 (1.20)1 20.083 (2.10)0.006 (0.15)Collector3 0.002 (0.05)0.066 (1.70)0.044 (1.10) 0.103 (2.60)0.035 (0.90) 0.086 (2.20)1Base0.006 (0.15) max

Small Signal TransistorMMBT2222A-HF (NPN)RoHS DeviceHalogen FreeFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Ap

Product specification PNP General Purpose Amplifier MMBT2907A FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available MMBT2222A. Ideal for medium power amplification and switching. MSL 1APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-23 The useful dynamic range extends to 6

GSTMMBT2907A PNP General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT2907AF(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2907AF SOT-23 2FOrdering Information GS P/NGSTMMBT2907A FPb Free

GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1POrdering Information GS P/NGSTMMBT2222A FPb Fre

MMBT2907 TRANSISTOR PNPTRANSISTOR PNP TRANSISTOR PNPSOT-23 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V I C Co

MMBT2222/MMBT2222AFEATURESFEATURESFEATURESFEATURESNPN Switching TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSSymbolUnitCharacteristic MMBT2222 MMBT2222ACollector-Emitter VoltageV 30 40 VdcCEOCollector-Base Voltage V 60 75 VdcCBOEmitter-Base Voltage V 5.0 6.0 VdcEBOCollector Current-Continuous Ic 600 600 mAdcTHERMAL CHARACTERISTI

MMBT2222AWNPN General Purpose Transistor321.Base2.Emitter3.Collector1Features Simplified outline(SOT-323)General purpose transistor.3.COLLECTOR1.BASE2.EMITTERAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-emitter voltage VCEO 40 VCollector-base voltage VCBO 75 VEmitter-base voltage VEBO 6.0 VCollector current IC 600 mATotal Devic

RUMW UMW MMBT2222ASOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBT2222A TRANSISTOR (NPN) FEATURES 1. BASE Epitaxial planar die construction 2. EMITTER Complementary PNP Type available(MMBT2907A) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO

RoHS MMBT2222LT1SOT-23 TRANSISTORDescription SOT-23Dimensions(Unit:mm) Medium Power Amplifier. NPN Silicon Transistor.2.30.21.30.20.5Ref. hFE RANK0.5Ref.Features Large collector current:ICmax=600mA23 Low collector saturation voltage 1P enabling low voltage operation1 Complementary pair with . Type Name0.38Ref.MINO.1 0.01-0.101.EMITTER2.BASE

MMBT2907ASOT-23Features(TO-236) PNP Silicon Epitaxial Planar Transistor For Switching and Amplifier Applications.Marking:2F The transistor is subdivided into one group accordingto its DC current gain1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)AParameter Symbol Value UnitCollector Base Voltage -V 60 VCBOCollector

MMBT2222ATransistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS FeaturesSOT-23 Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 70 V1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITT

MMBT2907ATransistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS FeaturesSOT-23 Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V1. BASE VCEO Collector-Emitter Voltage -60 V 2. EMITTE

SMD PNP TransistorFormosa MSMMBT2907 / MMBT2907AGeneral Purpose PNP TransistorPackage outlineSOT-23Features High collector-emitterbreakdien voltage. PNP silicon epitaxial planar transistor, is designed for generalpurpose and amplifier applications. Capable of 225mW power dissipation. Lead-free parts meet RoHS requirments.(B)(C) Suffix "-H" indicates Ha

SMD NPN TransistorFormosa MSMMBT2222 / MMBT2222AGeneral Purpose TransistorNPN SiliconPackage outlineFeatures High collector-emitterbreakdien voltage.SOT-23(BV = 40V@I =10mA)CEO C Small load switch transistor with high gain and lowstauration voltage, is designed for general purposeamflifier and switching applications at collector current. Capable of 225mW pow

MMBT2222ASOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) Marking: 1PSymbol Parameter Value Unit VCBO Collector-Base Voltage 75 V V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V EBOCI Collector Current 600 mA CP Collector Power D

MMBT2907A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )SOT- 23Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Marking: 2FSymbol Parameter Value Unit VCBO Collector-Base Voltage -60 V V Collector-Emitter Voltage -60 V CEOV Emitter-Base Voltage -5 V EBOCI Collector Current -600 mA CP Collector P

MMBT2222A NPN General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package. MSL 1 APPLICATIONS Use as a medium power amplifier. Switching requiring collector currents up to 500mA. SOT-23 MAXIMUM RA TING @ Ta=25 unless otherwise specified Symbol Parameter Valu

MMBT2907A PNP General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available MMBT2222A. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-23 The useful dynamic range extends to 600mA as a switch and to 100MHz as a

Jiangsu Yutai Electronics Co.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Vo

MMBT2907A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 VV

www.msksemi.comMMBT2907A-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A-MS)1. BASEMarking: 2F 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter

www.msksemi.comMMBT2222A-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A-MS)1. BASEMARKING:1P2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Em

DATA SHEET MMBT2222A GENERAL PURPOSE TRANSISTOR NPN CURRENT 600 mA POWER 300 mW FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE MMBT2907/A LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASESOT-23 TERMINALSOLDERABLE PER MIL-STD-220G, METHOD 208 APPROX. WEIGHT:0.008 GRAMS CASESOT-23 MAXIMUM RATINGS

DATA SHEET MMBT2907A GENERAL PURPOSE TRANSISTOR PNP VOLTAGE -60 Volts POWER 300 mW FEATURES HIGH DC CURRENT GAIN. LOW COLLECTOR-EMITTER SATURATION VOLTAGE BOTH NORMAL AND PB-FREE PACKAGE ARE AVAILABLE. LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASESOT-23 TERMINALSOLDERABLE PER MIL-STD-202, METHOD 208 APPROX. WEIGHT:0.008GRAM CASESOT-23 MAXIM

MMBT2907/MMBT2907APNP Silicon Epitaxial Planar TransistorSOT-23Features For switching and amplifier applications3The transistor is subdivided into one group according1to its DC current gain.21.B 2.E 3.CAbsolute Maximum Ratings (Ta=25 )Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage MMBT2907 40-VCEO VMMBT2907A60

MMBT2222/MMBT2222ANPN Silicon Epitaxial Planar TransistorSOT-23Features For switching and amplifier applications3121.B 2.E 3.CAbsolute Maximum Ratings (Ta=25 )Parameter Symbol Value UnitCollector Base Voltage MMBT2222 60VCBO VMMBT2222A 75Collector Emitter Voltage MMBT2222 30VCEO VMMBT2222A 40Emitter Base Voltage MMBT2222 5VEBO VMMBT2222A 6Collector

Jingdao Microelectronics co.LTD MMBT2907AMMBT2907ASOT-23PNP TRANSISTOR3FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -60 V2.EMITTER3.COLLECTORColle

Jingdao Microelectronics co.LTD MMBT2222AMMBT2222ASOT-23NPN TRANSISTOR3FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 75 V2.EMITTERCollectorEmitte

MMBT2222A TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT2907 ; Complementary to MMBT2907 250mW; Power Dissipation of 250mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

MMBT2907ASOT-23 BIPOLAR TRANSISTORS (PNP)FEATURES* Power dissipationPCM 0.3 W(Tamb=25OC)Collector current*ICM -0.6 A* Collector-base voltageV(BR)CBO: -60 VSOT-23Operating and storage junction temperature range* TJ,Tstg: -55OCto+150OCCOLLECTOR3MECHANICAL DATA1* Case: Molded plastic BASE 0.055(1.40)* Epoxy: UL 94V-O rate flame retardant0.047(1.20)2* L

MMBT2222A SOT-23 NPN Transistors32 1.Base2.Emitter1 3.Collector ) Simplified outline(SOT-23) Mrarking Marking 1P Absolute Maximum Ratin gs Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 70Collector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6Collector Current - Continuous IC 600 mAPower Dissipation PD

MMBT2907A SOT-23 PNP Transistors32 1.Base 2.Emitter1 3.Collector Simplified outline(SOT-23) MarkingMarking 2F Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -60Collector - Emitter Voltage VCEO -60 VEmitter - Base Voltage VEBO -5Collector Current - Continuous IC 600 mAPower Dissipation PD 250

MMBT2907SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP FEATURES Complimentary to MMBT2222 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO E

MMBT2222 SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING:1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 75 V VCEO Collector-Emitter Voltage -

MMBT2222AAO3400SI2305MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1BASE 2EMITTER 3COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage

MMBT2907AAO3400SI2305SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR (PNP)FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Base 2.Emitter 3.Collector Marking: 2F SOT-23 Plastic PackageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitVCBO -60 VCollector-Base VoltageVCEO Collector-Emitte

RoHS RoHSCOMPLIANT COMPLIANTMMBT2907AQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data : SOT-23 Case Terminals: Tin plated lea

RoHS RoHSCOMPLIANT COMPLIANTMMBT2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flamm

RoHS RoHSCOMPLIANT COMPLIANTMMBT2907A PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94

RoHS RoHSCOMPLIANT COMPLIANTMMBT2222AQ NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case: SOT-23 Terminals: Tin plated lead

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT2222E / MMBT2222AE NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage MMBT2222E 60 VCBO V MMBT2222AE 75 Collector Emitter Voltage MMBT2222E 30 VCEO V MMBT2222AE 40 Emitter Base Voltage

MMBT2222A MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT2907A Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT2222A 1P . Maximu

MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. Base 2.Emitter 3.Collector SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage MMBT2907 40 -VCE

MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1BASE 2EMITTER 3COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curren

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT2222A FEATURES NPN Switching Transistor MAXIMUM RATINGS Characteristic Symbol UnitMMBT2222 MMBT2222A Collector-Emitter VoltageV 30 40 VdcCEO-Collector-Base VoltageV 60 75 VdcCBO-

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT2907AFEATURES PNP Switching TransistorMAXIMUM RATINGS Characteristic Symbol UnitMMBT2907 MMBT2907A Collector-Emitter VoltageV -40 -60 VdcCEO-Collector-Base VoltageV -60 -60 VdcCBO-

MMBT2222ANPN GENERAL PURPOSE SWITCHING TRANSISTOR75Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.6A.ansition frequency fT>250MHz @ TrIC=20mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: S

MMBT2907APNP GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 300mWattsVOLTAGEFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-60V.Collector current IC=-0.6A.ansition frequency fT>200MHz @ IC=-Tr20mAdc, VCE=-50Vdc, f=100MHz.In compliance with EU RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminal

MMBT2222ABIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT2907A Epitaxial planar die construction Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitC

AMMBT2907BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBT2222 General purpose Amplifier Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollecto

MMBT2907ACSilicon Epitaxial Planar Transistor( PNP)EFeaturesBEpitaxial planar die construction.SOT-23 Mark: 2FComplementary NPN Type available(MMBT2222A)Absolute Maximum Ratings*T= 25C unless otherwise notedASymbol Parameter Value UnitsV Collector-Base Voltage - 60VCBOVCEO VCollector-Emitter Voltage - 60VEmitter-Base VoltageEBO - 5 VI Collector Curren

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures ASOT-23C Dim Min Max A0.37 0.51B C 1.20 1.40BTOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10K0.903

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures Epitaxial Planar Die Construction. NPN complement:MMBT2222AASOT-23 Ideal for Medium Power Amplification andCDim Min MaxSwitching.A0.37 0.51B C Marking Code:2FB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10K0.90

isc Silicon PNP Transistor MMBT2907ADESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise and small signal amplifiersfrom VHF band to UHF bandABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBO