2SD882UP - параметры, поиск аналогов, даташиты транзистора

2SD882UP Datasheet (PDF)

7.1. Size:535K semtech
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ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 350 s) ICP 7 AT

7.2. Size:297K semtech
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ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit120 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCES 100 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 VCollector

7.3. Size:222K cn cbi
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2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 10 ms) ICP 7 AOT

7.4. Size:210K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD882U-PDESCRIPTIONHigh Collector Current-I = 3.0ACLow Saturation Voltage -: V = 0.8V(Max)@ I = 2.0A, I = 0.2ACE(sat) C BGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for used in medium power linearand switching applicationsABSOLUTE MAXIMUM RATINGS(T

Другие транзисторы... 2N5401U , 2N5551U , 2SB772U-R , 2SB772U-Q , 2SB772U-P , 2SB772U-E , 2SD882U-R , 2SD882U-Q , 13001-A , 2SD882U-E , BC846DW , BC847DW-A , BC847DW-B , BC847DW-C , BC856DW , BC857DW , MMBT5451DW .