MMDT3052DW-G - описание и поиск аналогов

MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar Transistor Features Each transistor elements are independent Applications For low frequency amplify application MARKING 5G Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 150 mW Junction Temperature

MMDT3946 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Complementary Pair One 3904-Type NPN Case SOT363 One 3906-Type PNP Case Material Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Lev

MMDT3906 40V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > -40V Case SOT363 IC = -200mA High Collector Current Case Material Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Lev

MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2 Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 1) B C Qualified to AEC-Q101 Standards for High Reliability B 1.10 1.25 1.20

MMDT3946LP4 COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS Features Complementary Pair One 3904 (NPN) and One 3906 (PNP) DFN1310H4-6 Epitaxial Planar Die Construction Dim Min Max Typ Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) A 1.25 1.38 1.30 Green Device (Note 2) Top View B 0.95 1.08 1.00 Mecha

MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case SOT363 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (N

MMDT3904V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2 Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) B C "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 E1

MMDT3904VC 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > 40V Case SOT563 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Lev

MMDT3906VC Lead-free Green DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Ideal for Low Power Amplification and Switching C1 B2 E2 Ultra-Small Surface Mount Package SOT-563 Lead Free By Design/RoHS Compliant (Note 1) B C Dim Min Max Typ "Green" Device (Note 4) A 0.15 0.30 0.25 E1 B1 C2 B 1.10 1.25 1.20 Mechanic

MMDT3946 Features Complementary Pari NPN(3904), PNP(3906) Ideal for Low Power Amplification and Switching NPN/PNP Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Small Signal Surface Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Mount Transistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates Ro

MMDT3906 Features Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified SOT-363 Operatin

MMDT3906V Features Ideal for Low Power Amplification and Switching Halogen Free Available Upon Request By Adding Suffix "-HF" PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Oth

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3906V Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP RoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tran

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3904V Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3906 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP RoHS Compliant. See ordering information) Ideal for Low Power Amplification and Switching Small Signal Surface Ultra-small Surface Mount Packa

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3904V Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C indicates halogen-free. SOT-363 FEATURE A Complementary Pair E One 3904-Type NPN L One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching B . MARKING F C H J D G K 46 Millimeter Millimeter R

MMDT3906 PNP Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation. O .053(1.35 .096(2.45) PCM 0.2 W (Tamp.=25 C) .045(1.15 .085(2.15) Collector current .018(0.46) .010(0.26) ICM - 0.2 A

MMDT3904 NPN Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF Power dissipation (0.525)REF O PCM 0.2 W (Tamp.= 25 C) .053(1.35 .096(2.45) .045(1.15 .085(2.15) Collector current ICM 0.2 A .018(0.46) .010(0.26) .0

JC ET DUAL TRANSISTOR (NPN+PNP) 6 5 Complementary Pair 4 One 3904-Type NPN One 3906-Type PNP 1 2 3 Epitaxial Planar Die Construction Ideal for Low Po

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors SOT-363 MMDT3906 DUAL TRANSISTOR(PNP) FEATURES Epitaxial planar die construction Ideal for low power amplification and switching 1 MARKING K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitte

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT3904 DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Coll

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60

MMDT3946 Complementary NPN/PNP Transistor SOT-363 Features Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING K46 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VC

MMDT3906 SOT-363 Dual Transistor(PNP) SOT-363 Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING K3N Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5

MMDT3904 SOT-363 Dual Transistor(NPN) SOT-363 Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING K6N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC C

SMD Type Transistors PNP Transistors MMDT3906 (KMDT3906) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current -

SMD Type Transistors NPN Transistors MMDT3904 (KMDT3904) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Con

MMDT3946 COMPLEMENTARY NPN/PNP GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 225 mWatt VOLTAGE FEATURES Epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current Ic = 200mA Transition Frequency> 300MHz fT@IC=10mA,VCE=20V, f=100MHz Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249

MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 225 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-363, Plastic

MMDT3946 Small Surface Mount Transistor FEATURES Complementary pair. One 3904-Type NPN. One 3906-Type PNP. Ideal for low power amplification and switching. Ultra-Small surface mount package. Expitaxial planar die construction. SOT-363 APPLICATIONS General switching and amplification. MAXIMUM RATIPN Section @ Ta=25 unless otherwise specified SYMBOL PARAMETE

MMDT3906 Dual PNP Small Signal Transistors MMDT3906 Epoxy meets UL 94 V-0 flammability rating Lead Free Finish/RoHS Compliant For Switching and AF Amplifier Applications Rugged and reliable Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

MMDT3904 Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. Ideal for low power amplification and switching. Ultra-small surface mount package Also available in lead free version. APPLICATIONS General switching and amplification SOT-363 MAXIMUM RATING @ Ta=25 unless otherwise specified SYMBOL PARAMETER VALUE UNIT VCBO c

MMDT3904SG Double NPN Transistors Features SOT-23-6 For switching and amplifier applications 4.C2 5.E1 3.B2 6.C1 2.E2 Equivalent Circuit 1.B1 Marking Code 3904 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 40 V CEO Emitter Base Voltage

MMDT3906SG Double PNP Transistors Features SOT-23-6 For switching and amplifier applications 4.C2 5.E1 3.B2 6.C1 2.E2 Equivalent Circuit 1.B1 Marking Code 3906 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collector Emitter Voltage -V 40 V CEO Emitter Base Vol

MMDT3906 MMDT3906 MMDT3906 MMDT39 0 6 DUAL TRANSISTOR(PNP+ PNP) SOT-363 6 5 4 FEATURES 1 Epitaxial planar die construction 2 3 Ideal for low power amplification and switching MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Vo

MMDT3904 MMDT3904 MMDT3904 MMDT39 0 4 DUAL TRANSISTOR(NPN+ NPN) FEATURES SOT-363 Epitaxial planar die construction 6 Ideal for low power amplification and switching 5 4 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Colle

RoHS COMPLIANT MMDT3906 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K3N Equivalent circuit 1 / 5 S-S2844 Yangzhou

RoHS COMPLIANT MMDT3904 Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K6N Equivalent circuit 1 / 5 S-S2843 Yangzhou Yangjie El

MMDT3906 MMDT3906 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (PNP+PNP) Complementary to MMDT3904 Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

MMDT3904 MMDT3904 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5

SOT-363 Plastic-Encapsulate Transistors SOT-363 DUAL TRANSISTOR (PNP+PNP) MMDT3906DW FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO

SOT -363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) MMDT3904DW SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC

Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.2 A Collector

SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) MMDT3946DW SOT-363 FEATURES Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING K46 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Co

MMDT3904 DUAL TRANSISTOR NPN+NPN 0.2A, 40V, 60V SOT-363 Plastic-Encapsulate Transistors MMDT3904 DUAL TRANSISTOR NPN+NPN FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MAXIMUM RATINGS Ta=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base