2SD669AD-D. Аналоги и основные параметры
Наименование производителя: 2SD669AD-D
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 140 MHz
Ёмкость коллекторного перехода (Cc): 14 pf
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO252
Аналоги (замена) для 2SD669AD-D
- подборⓘ биполярного транзистора по параметрам
2SD669AD-D даташит
6.1. Size:665K blue-rocket-elect
2sd669ad.pdf 
2SD669AD Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features 2SB649AD Complementary pair with 2SB649AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni
7.2. Size:439K utc
2sd669 2sd669a.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 B C E Tape Reel 2SD669xL-x-AB3-R 2SD669xG-
7.3. Size:36K hitachi
2sd669a.pdf 
2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO
7.4. Size:110K jiangsu
2sd669 2sd669a.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 TO- 126C 2SD669A TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier Complementary Pair with 2SB649/A 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector- Base Voltage 180 V VCEO Collector-E
7.5. Size:247K jiangsu
2sd669al.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SD669AL TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 170 V VEBO Emitter-Base Volt
7.6. Size:180K lge
2sd669-2sd669a to-126.pdf 
2SD669/2SD669A(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 Low frequency power amplifier complementary pair 1.500 with 2SB649/A 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 0.000 0.300 Symbol Parameter Value Units11.000 VCBO Collector- Base Voltage 180 V 2.
7.7. Size:1131K blue-rocket-elect
2sd669 2sd669a.pdf 
2SD669(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(A) Complementary pair with 2SB649(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
7.8. Size:473K blue-rocket-elect
2sd669a.pdf 
2SD669(A)(BR3DA669(A)QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF) Complementary pair with 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF). / Applications Low frequency power
7.9. Size:163K nell
2sd669am-a.pdf 
RoHS RoHS 2SD669AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose NPN Power Transistor 1.5A / 120V, 160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SB649AM/2SB649AM-A NPN E All dimensions in millimeters
7.10. Size:280K inchange semiconductor
2sd669 2sd669a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION With TO-126 package Complement to type 2SB649/649A High breakdown voltage VCEO 120/160V High current 1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collect
7.11. Size:216K inchange semiconductor
2sd669a.pdf 
isc Silicon NPN Power Transistor 2SD669A DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM R
Другие транзисторы: 2SB649AD-D, 2SD1857D, 2SD1857D-P, 2SD1857D-Q, 2SD1857D-R, 2SD669AD, 2SD669AD-B, 2SD669AD-C, 2SA1015, 3CA8550, 3CA8550-B, 3CA8550-C, 3CA8550-D, MJE13003DI1G, MPSA95, S8050MG-B, S8050MG-C
