Биполярный транзистор BCX5316-13R - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCX5316-13R
Маркировка: AL
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 25 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: SOT89
Аналоги (замена) для BCX5316-13R
BCX5316-13R Datasheet (PDF)
bcx51ta bcx51-13r bcx5110ta bcx5116ta bcx5116tc bcx52ta bcx5210ta bcx5216ta bcx53ta bcx5310ta bcx5316ta bcx5316tc bcx5316-13r bcx5110tc bcx51tc bcx5210tc bcx5216tc bcx52tc bcx5310tc bcx53tc.pdf
BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data BVCEO > -45V, -60V & -80V Case: SOT89 IC = -1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound; ICM = -2A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)
bcx5316q.pdf
BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT89 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound; UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish
bc640 bcp53 bcx53.pdf
BC640; BCP53; BCX5380 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC640[2] SOT54 SC-43A TO-92 BC639BCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56[1] Valid for all available
bcx51 bcx52 bcx53 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BCX51; BCX52; BCX53PNP medium power transistors1999 Apr 19Product specificationSupersedes data of 1997 Jul 04Philips Semiconductors Product specificationPNP medium power transistors BCX51; BCX52; BCX53FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAP
bcx53t.pdf
BCX53T series80 V, 1 A PNP power bipolar transistorsRev. 1 22 August 2019 Product data sheet1. Product profile1.1. General descriptionPNP power transistors in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plasticpackage.Table 1. Product overviewType number Package NPN complementNexperia JEDECBCX53T SOT89 SC-62 BCX56TBCX53-10T BCX56-10TBCX53-16T BCX56-16T
bcp53 bcp53-10 bcp53-16 bcx53 bcx53-10 bcx53-16 bc53pa bc53-10pa bc53-16pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bc640 bcp53 bcx53.pdf
BC640; BCP53; BCX5380 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC640[2] SOT54 SC-43A TO-92 BC639BCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56[1] Valid for all available
bcp53 bcx53 bc53pa.pdf
BCP53; BCX53; BC53PA80 V, 1 A PNP medium power transistorsRev. 9 19 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56BC53PA SO
bcx51 bcx52 bcx53.pdf
PNP Silicon AF Transistors BCX 51 ... BCX 53Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX 54 BCX 56 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCX 51 AA Q62702-C1847 B C E SOT-89BCX 51-10 AC Q62702-C1831BCX 51-16 AD Q62702-C1857BCX 52 AE Q62702-C1743
bcx51 bcx52 bcx53.pdf
BCX51SOT89 PNP SILICON PLANAR BCX52MEDIUM POWER TRANSISTORSBCX53ISSUE 3 FEBRUARY 1996 COMPLEMENTARY TYPE BCX51 BCX54BCX52 BCX55 CBCX53 BCX56PARTMARKING DETAILS BCX51 AA BCX52 AE BCX53 AHEBCX51-10 AC BCX52-10 AG BCX53-10 AKCBCX51-16 AD BCX52-16 AM BCX53-16 ALBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SY
bcx51 bcx51-16 bcx52 bcx52-16 bcx53 bcx53-10 bcx53-16.pdf
BCX51...-BCX53...PNP Silicon AF Transistors1 For AF driver and output stages2 High collector current 32 Low collector-emitter saturation voltage Complementary types: BCX54...BCX56 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCX51 AA 1=B 2=C 3=E SOT89 BCX51-16 AD 1=B 2=C 3=E SOT89 BCX52 AE
bcx53 bcx53-10 bcx53-16.pdf
BCX53,BCX53-10,BCX53-16Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO -100IC=-100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO -80IC=-10mA, IB=0Collector-Emitter Breakdown Voltage(Note4) VV(BR)EBO -5IE=-100A, IC=0Emitter-Base Breakdown Voltage VICBO VCB=-30V, IE=0Collector Cutoff Current A
bcx53.pdf
BCX53PNP TransistorsElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-891234.4~4.61.BASE1.4~1.82.COLLECTOR 1.4~1.6Features 3.EMITTER Power dissipation 0.36~0.56 PCM: 0.5 W (Tamb=25 oC) Collector current 0.32~0.52 ICM: -1.0 A 0.35~0.441.5Ref. Collector-base voltage 2.9~3
bcx51 bcx52 bcx53.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX51,BCX52,BCX53 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR NPN Complements to BCX54,BCX55,BCX56 Low Voltage3. EMITTER High CurrentAPPLICATIONS Medium Power General Purposes Driver Stages of Audio Amplifiers MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD
bcx51 bcx52 bcx53.pdf
BCX51,BCX52,BCX53 TRANSISTOR (PNP) SOT-89-3L FEATURES NPN Complements to BCX54,BCX55,BCX56 1. BASE Low Voltage2. COLLECTOR High Current3. EMITTER APPLICATIONS Medium Power General Purposes Driver Stages of Audio Amplifiers MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD BCX52:AE, BCX52-10:AG, BCX52-16:AM BCX53:AH, BCX53-10:AK, BCX53-16:AL MAXIMUM RATINGS (Ta
bcx51 bcx52 bcx53.pdf
BCX51,BCX52,BCX53 SOT-89-3L Plastic-Encapsulate PNP Transistors SOT-89-3L FEATURES NPN Complements to BCX54,BCX55,BCX56 Low Voltage1. BASE High Current2. COLLECTORAPPLICATIONS 3. EMITTER Medium Power General Purposes Driver Stages of Audio Amplifiers MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD BCX52:AE, BCX52-10:AG, BCX52-16:AM BCX53:A H, BCX53-10:AK, BCX53-1
bcx53.pdf
BCX53PNP Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. BASE 12. COLLECTOR233. EMITTERSOT-89MAXIMUM RATINGS ( TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO-100Collector-Base Voltage VVCEO-80 VCollector-Emitter VoltageVEBOVEmitter-Base Voltage -5.0IC -1.0 ACollector Current ContinuousPDmWTotal Device Dissipation TA=25C 500TJ
bcx53.pdf
FM120-M WILLASTHRUBCX53SOT-89 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reveSOD-123HTRANSISTOR (PNP) rse leakage current and thermal resistance. Low profile surface mounted application in
bcx53m3.pdf
Spec. No. : C824M3 Issued Date : 2007.05.04 CYStech Electronics Corp.Revised Date : 2014.02.24 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BCX53M3Features High breakdown voltage, BV -80V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BCX56M3 Pb-free lead plating and halogen
bcx53u.pdf
BCX53U PNP Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 100 VCollector Emitter Voltage -VCEO 80 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1 APeak Collector Current -ICM 1.5 A0.5 1) Total Power Dissipation Ptot W 1.3 2) Junction Temperature Tj 150
bcx51-bcx53.pdf
SEMICONDUCTORBCX51 ~ BCX53TECHNICALDATABCX51,BCX52,BCX53 TRANSISTOR (PNP) FEATURESSOT-89-3L NPN Complements to BCX54,BCX55,BCX56 Low Voltage High Current 1. BASE 2. COLLECTOR APPLICATIONS 3. EMITTER Driver Stages of Audio Amplifiers MARKING: BCX51:AA, BCX51-10:AC, BCX51-16:AD BCX52:AE, BCX52-10:AG, BCX52-16:AM BCX53:A H, BCX53-10:AK, BCX53-16:AL MAXIMUM RAT
bcx51 bcx52 bcx53.pdf
SMD Type TransistorsPNP TransistorsBCX51BCX52BCX53KCX51KCX52KCX531.70 0.1Features NPN Complements to BCX54,BCX55,BCX56 Low Voltage High Current0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage BCX51 VCBO -45 VBCX52 -60 VBCX53 -100 VCollector-emitter volt
bcx53-16-au.pdf
PBCX53-16-AU PNP Low Vce(sat) Transistor SOT-89 Unit: inch(mm) Voltage -100V -1A Current Features Silicon PNP epitaxial type Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA High collector current capability Excellent DC current gain characteristics AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61
bcx51 bcx51-10 bcx51-16 bcx52 bcx52-10 bcx52-16 bcx53 bcx53-10 bcx53-16.pdf
BCX51/BCX52/BCX53PNP Medium power transistors FEATURES For AF driver and output stages. Pb High collector current. Lead-free Low collector-emitter saturation voltage. Complementary types: BCX54/BCX55/BCX56. APPLICATIONS Medium power general purposes. Driver stages of audio amplifiers. SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX51 AA SOT
bcx51 bcx52 bcx53 bcx51-10 bcx52-10 bcx53-10 bcx51-16 bcx52-16 bcx53-16.pdf
bcx53sq-10 bcx53sq-16.pdf
BCX53SQPNP Silicon Epitaxial Planar TransistorFeatures SOT-89 For AF driver and output stages High collector current Low collector-emitter saturation voltageAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbol Value UnitsCollector Base Voltage VCBO -100 VCollector Emitter Voltage VCEO -80 VEmitter Base Voltage VEBO -5 VCollector Current I
bcx51 bcx52 bcx53 bcx51-10 bcx52-10 bcx53-10 bcx51-16 bcx52-16 bcx53-16.pdf
BCX51 THRU BCX53BCX51 THRU BCX53BCX51 THRU BCX53BCX51 THRU BCX53BCX51 THRU BCX53 TRANSISTOR(PNP)FEATURESSOT-89 NPN Complements to BCX54,BCX55,BCX56 Low Voltage High Current1. BASE 2. COLLECTOR APPLICATIONS 3. EMITTER Medium Power General Purposes Driver Stages of Audio Amplifiers MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD BCX52:AE, BCX52-10:AG, BCX52-16:AM
bcx51 bcx51-10 bcx51-16 bcx52 bcx52-10bcx52-16 bcx53 bcx53-10 bcx53-16.pdf
BCX51/BCX52/BCX53BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to BCX54/BCX55/BCX/56 High current and Low Voltage For Medium Power General Purpose For Drive Stages of Audio Amplifiers Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approxi
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: SRC1202E | MP4T6325
Список транзисторов
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050