L8550HPLT3G datasheet, аналоги, основные параметры

Наименование производителя: L8550HPLT3G

Маркировка: 1HB

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.225 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT-23

 Аналоги (замена) для L8550HPLT3G

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L8550HPLT3G даташит

 ..1. Size:84K  lrc
 l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf pdf_icon

L8550HPLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

 5.1. Size:84K  lrc
 l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

L8550HPLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

 5.2. Size:89K  lrc
 l8550hplt1g.pdf pdf_icon

L8550HPLT3G

LESHAN RADIO COMPANY, LTD. L8550HPLT1G General Purpose Transistors Series PNP Silicon S-L8550HPLT1G Series FEATURE High current capacity in compact package. Epitaxial planar type. 3 PNP complement L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirem

 8.1. Size:84K  lrc
 l8550hrlt1g.pdf pdf_icon

L8550HPLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: L8050HRLT3G, L8050HSLT3G, L8050PLT3G, L8050QLT3G, L8050RLT1G, L8050RLT3G, L8050SLT1G, L8050SLT3G, 2N5551, L8550HQLT3G, L8550HRLT3G, L8550HSLT3G, L8550PLT3G, L8550QLT3G, L8550RLT1G, L8550RLT3G, L8550SLT1G