Справочник транзисторов. L8550HSLT3G

 

Биполярный транзистор L8550HSLT3G Даташит. Аналоги


   Наименование производителя: L8550HSLT3G
   Маркировка: 1HH
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 300
   Корпус транзистора: SOT-23
 

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L8550HSLT3G Datasheet (PDF)

 ..1. Size:84K  lrc
l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdfpdf_icon

L8550HSLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 5.1. Size:84K  lrc
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdfpdf_icon

L8550HSLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 5.2. Size:83K  lrc
l8550hslt1g.pdfpdf_icon

L8550HSLT3G

LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesS-L8550HPLT1GPNP SiliconFEATURESeries High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir

 8.1. Size:89K  lrc
l8550hplt1g.pdfpdf_icon

L8550HSLT3G

LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesPNP Silicon S-L8550HPLT1GSeriesFEATURE High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirem

Другие транзисторы... L8050QLT3G , L8050RLT1G , L8050RLT3G , L8050SLT1G , L8050SLT3G , L8550HPLT3G , L8550HQLT3G , L8550HRLT3G , TIP41 , L8550PLT3G , L8550QLT3G , L8550RLT1G , L8550RLT3G , L8550SLT1G , L8550SLT3G , L9012PLT3G , L9012QLT3G .

History: AD702C | BDS29BM3A

 

 
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