Биполярный транзистор LBC807-16LT3G Даташит. Аналоги
Наименование производителя: LBC807-16LT3G
Маркировка: 5A1
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT-23
- подбор биполярного транзистора по параметрам
LBC807-16LT3G Datasheet (PDF)
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
lbc807-16lt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURELBC807-16LT1G Collector current capability IC = -500 mA.LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Au
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
lbc807-16wt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Collector current capability IC = -500 mA. LBC807-16WT1G Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-16WT1G General purpose switching and amplification. PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: R8066 | TN3417



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