Биполярный транзистор LBC807-25WT3G Даташит. Аналоги
Наименование производителя: LBC807-25WT3G
Маркировка: 5B
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SOT-323
Аналог (замена) для LBC807-25WT3G
LBC807-25WT3G Datasheet (PDF)
lbc807-25wt1g lbc807-25wt3g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other
lbc807-25wt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other
lbc807-25lt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC807-16LT1GLBC807-25LT1GPNP SiliconLBC807-40LT1GFEATURES-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V.S-LBC807-25LT1G General purpose switching and amplification.S-LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product complia
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
Другие транзисторы... L9014RLT3G , L9014SLT3G , L9014TLT3G , L9015QLT3G , L9015RLT3G , L9015SLT3G , LBC807-16LT3G , LBC807-25LT3G , S9014 , LBC807-40LT3G , LBC807-40WT3G , LBC817-16DPMT3G , LBC817-25DPMT3G , LBC817-40DPMT3G , LBC817-40WT3G , LBC846ADW1T3G , LBC846ALT3G .
History: LBSS5250Y3T1G | LBC848CLT3G | NSS1C200LT1G
History: LBSS5250Y3T1G | LBC848CLT3G | NSS1C200LT1G



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