Справочник транзисторов. LBC848BDW1T3G

 

Биполярный транзистор LBC848BDW1T3G Даташит. Аналоги


   Наименование производителя: LBC848BDW1T3G
   Маркировка: 1K
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.38 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT363
 

 Аналог (замена) для LBC848BDW1T3G

   - подбор ⓘ биполярного транзистора по параметрам

 

LBC848BDW1T3G Datasheet (PDF)

 ..1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdfpdf_icon

LBC848BDW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 3.1. Size:226K  lrc
lbc848bdw1t1g.pdfpdf_icon

LBC848BDW1T3G

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GNPN DualsLBC847BDW1T1GLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.We declare that the material of product compliance wit

 3.2. Size:209K  lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdfpdf_icon

LBC848BDW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 7.1. Size:402K  lrc
lbc848blt1g.pdfpdf_icon

LBC848BDW1T3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

Другие транзисторы... LBC847BLT3G , LBC847BN3T5G , LBC847BPDW1T3G , LBC847CDW1T3G , LBC847CLT3G , LBC847CPDW1T3G , LBC847CTT1G , LBC848ALT3G , D209L , LBC848BLT3G , LBC848BPDW1T3G , LBC848CDW1T3G , LBC848CLT3G , LBC848CPDW1T3G , LBC849BLT1G , LBC849BLT3G , LBC849CLT1G .

History: SRA2202EF | CH848BPTP

 

 
Back to Top

 


 
.