Справочник транзисторов. LBC859BLT1G

 

Биполярный транзистор LBC859BLT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: LBC859BLT1G
   Маркировка: 4B
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 220
   Корпус транзистора: SOT-23

 Аналоги (замена) для LBC859BLT1G

 

 

LBC859BLT1G Datasheet (PDF)

 ..1. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 ..2. Size:234K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 ..3. Size:158K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859clt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

 ..4. Size:234K  lrc
lbc858alt1g lbc858alt1g lbc858blt1g lbc858blt3g lbc858clt1g lbc858clt3g lbc859blt1g lbc859blt1g lbc859clt1g lbc859clt3g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 9.1. Size:158K  lrc
lbc858alt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

 9.2. Size:178K  lrc
lbc858cdw1t1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which is65designed for low power surface mount applications.4We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

 9.3. Size:176K  lrc
lbc857bdw1t1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23 Device Marking:SOT-36

 9.4. Size:135K  lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 9.5. Size:276K  lrc
lbc858cwt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountapplications. CWT1GFeaturesS-LBC856AWT1G, BWT1GWe declare that the material of product c

 9.6. Size:235K  lrc
lbc856blt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1LBC857CLT1G ESD Rating Human Body Model: >4000 VS-LBC857CLT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control

 9.7. Size:158K  lrc
lbc858blt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

 9.8. Size:176K  lrc
lbc858bdw1t1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

 9.9. Size:176K  lrc
lbc857cdw1t1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an

 9.10. Size:278K  lrc
lbc858bwt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purpose CWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.FeaturesS-LBC856AWT1G, BWT1GWe declare that the material of product c

 9.11. Size:134K  lrc
lbc857btt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 9.12. Size:275K  lrc
lbc857cwt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.LBC856AWT1G, BWT1GGeneral Purpose TransistorsLBC857AWT1G, BWT1GCWT1GPNP SiliconLBC858AWT1G, BWT1GThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/S-LBC856AWT1G, BWT1GSC70 which is designed for low power surface mountapplications. S-LBC857AWT1G, BWT1GFeaturesCWT1GWe declare t

 9.13. Size:234K  lrc
lbc856alt1g lbc856alt3g lbc856blt1g lbc856blt3g lbc857alt1g lbc857alt1g lbc857blt1g lbc857blt3g lbc857clt1g lbc857clt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 9.14. Size:233K  lrc
lbc856alt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 9.15. Size:182K  lrc
lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g lbc856adw1t1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

 9.16. Size:403K  lrc
lbc850clt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 9.17. Size:254K  lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

 9.18. Size:402K  lrc
lbc850blt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha

 9.19. Size:402K  lrc
lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g lbc848blt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 9.20. Size:404K  lrc
lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 9.21. Size:284K  lrc
lbc857awt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconCWT1GThese transistors are designed for general purposeLBC858AWT1G, BWT1Gamplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount CWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesS-LBC857AWT1G, BWT1GWe declare that the

 9.22. Size:194K  lrc
lbc856adw1t1g lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an

 9.23. Size:160K  lrc
lbc857clt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC857CLT1G Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a

 9.24. Size:402K  lrc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 9.25. Size:148K  lrc
lbc857blt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 V SeriesESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a

 9.26. Size:158K  lrc
lbc858clt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1G SeriesPNP SiliconS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site an

 9.27. Size:182K  lrc
lbc856bdw1t1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

 9.28. Size:278K  lrc
lbc850bwt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846AWT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO VdcSOT323 /SC70

 9.29. Size:278K  lrc
lbc856bwt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

 9.30. Size:159K  lrc
lbc857alt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 9.31. Size:353K  lrc
lbc856blt1g lbc856blt3g.pdf

LBC859BLT1G LBC859BLT1G

LBC856BLT1GS-LBC856BLT1GGeneral Purpose Transistors PNP Silicon1. FEATURESMoisture Sensitivity Level: 1SOT23(TO-236)ESD Rating Human Body Model: >4000 V Machine Model: >400 VWe declare that the material of product compliance with3COLLECTOR RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring1unique si

 9.32. Size:227K  lrc
lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846ALT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.31MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcSOT23LBC846 6

 9.33. Size:279K  lrc
lbc857bwt1g.pdf

LBC859BLT1G LBC859BLT1G

LESHAN RADIO COMPANY, LTD.LBC856AWT1G,BWT1GGeneral Purpose TransistorsLBC857AWT1G,BWT1GPNP SiliconCWT1GLBC858AWT1G,BWT1GThese transistors are designed for general purposeamplifier applications. They are housed in the SOT323/CWT1GSC70 which is designed for low power surface mountS-LBC856AWT1G,BWT1Gapplications.S-LBC857AWT1G,BWT1GFeaturesWe declare that the mat

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MMUN2113 | LDTB123EET1G | 2SA546A | BCV27

 

 
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