Справочник транзисторов. LBSS5250Y3T1G

 

Биполярный транзистор LBSS5250Y3T1G Даташит. Аналоги


   Наименование производителя: LBSS5250Y3T1G
   Маркировка: H
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.55 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 320 MHz
   Ёмкость коллекторного перехода (Cc): 22 pf
   Статический коэффициент передачи тока (hfe): 180
   Корпус транзистора: SOT89
 

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LBSS5250Y3T1G Datasheet (PDF)

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LBSS5250Y3T1G

LBSS5250Y3T1GS-LBSS5250Y3T1GMidium Power PNP Transistors121. FEATURES3Low saturation voltage, typicallyHigh speed switchingSOT89We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring2unique site and control change requirements; AEC-Q101qualified and PPA

 8.1. Size:616K  lrc
lbss5240lt1g lbss5240lt3g.pdfpdf_icon

LBSS5250Y3T1G

LESHAN RADIO COMPANY, LTD.General Purpose Transistors-40V,-2A Low VCE(sat) PNP SiliconFEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat LBSS5240LT1G generationS-LBSS5240LT1G Replacement for SOT89/SOT223 standard packaged transistors.3 We declare that the material of product complian

 8.2. Size:609K  lrc
lbss5240lt1g.pdfpdf_icon

LBSS5250Y3T1G

LESHAN RADIO COMPANY, LTD.General Purpose Transistors-40V,-2A Low VCE(sat) PNP SiliconFEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat LBSS5240LT1G generationS-LBSS5240LT1G Replacement for SOT89/SOT223 standard packaged transistors.3 We declare that the material of product complian

 9.1. Size:564K  lrc
lbss5350sy3t1g.pdfpdf_icon

LBSS5250Y3T1G

LBSS5350SY3T1GS-LBSS5350SY3T1GPNP TRANSISTOR121. FEATURES3Low collector-to-emitter saturation voltage.Fast switching speed.SOT89Large current capacity and wide ASO.We declare that the material of product compliance with RoHS requirements and Halogen Free.2S- prefix for automotive and other applications requiringunique site and control chang

Другие транзисторы... LBC858CLT3G , LBC859BLT1G , LBC859CLT1G , LBC859CLT3G , LBSS4240LT3G , LBSS4250Y3T1G , LBSS4350SY3T1G , LBSS5240LT3G , A1266 , LBSS5350SY3T1G , LBTN180Y3T1G , LBTN180Z4TZHG , LBTP180Y3T1G , LBTP460Z4TZHG , LDTA114EET1G , LDTA114TET1G , LDTA114YET1G .

History: LBC848CLT3G | NSS1C200LT1G

 

 
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