Биполярный транзистор LMBT2222ATT3G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: LMBT2222ATT3G
Маркировка: 1P
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 75
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.6
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 250
MHz
Ёмкость коллекторного перехода (Cc): 8
pf
Статический коэффициент передачи тока (hfe): 35
Корпус транзистора:
SC89
Аналоги (замена) для LMBT2222ATT3G
LMBT2222ATT3G
Datasheet (PDF)
..1. Size:117K lrc
lmbt2222att1g lmbt2222att3g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
3.1. Size:117K lrc
lmbt2222att1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
5.1. Size:631K lrc
lmbt2222alt1g lmbt2222alt3g.pdf 
LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev
5.2. Size:62K lrc
lmbt2222awt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a
5.3. Size:250K lrc
lmbt2222adw1t1g.pdf 
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
5.4. Size:503K lrc
lmbt2222alt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT2222ALT1GFEATURESS-LMBT2222ALT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT-23DEVICE MARKING AN
5.5. Size:250K lrc
lmbt2222adw1t1g lmbt2222adw1t3g.pdf 
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
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