Справочник транзисторов. LMBT2222ATT3G

 

Биполярный транзистор LMBT2222ATT3G Даташит. Аналоги


   Наименование производителя: LMBT2222ATT3G
   Маркировка: 1P
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Ёмкость коллекторного перехода (Cc): 8 pf
   Статический коэффициент передачи тока (hfe): 35
   Корпус транзистора: SC89
 

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LMBT2222ATT3G Datasheet (PDF)

 ..1. Size:117K  lrc
lmbt2222att1g lmbt2222att3g.pdfpdf_icon

LMBT2222ATT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

 3.1. Size:117K  lrc
lmbt2222att1g.pdfpdf_icon

LMBT2222ATT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

 5.1. Size:631K  lrc
lmbt2222alt1g lmbt2222alt3g.pdfpdf_icon

LMBT2222ATT3G

LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev

 5.2. Size:62K  lrc
lmbt2222awt1g.pdfpdf_icon

LMBT2222ATT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a

Другие транзисторы... LDTD123YLT1G , LDTD123YLT3G , LH8050PLT3G , LH8050QLT3G , LH8550PLT3G , LH8550QLT3G , LMBT2222ADW1T3G , LMBT2222ALT3G , 2N3904 , LMBT2907ALT3G , LMBT2907AWT3G , LMBT2907LT1G , LMBT2907LT3G , LMBT3904DW1T3G , LMBT3904LT3G , LMBT3904TT3G , LMBT3904WT3G .

 

 
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