LMBT3946DW1T1G datasheet, аналоги, основные параметры
Наименование производителя: LMBT3946DW1T1G
Маркировка: 46
Тип материала: Si
Полярность: NPN*PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT363
Аналоги (замена) для LMBT3946DW1T1G
- подборⓘ биполярного транзистора по параметрам
LMBT3946DW1T1G даташит
..1. Size:664K lrc
lmbt3946dw1t1g lmbt3946dw1t3g.pdf 
LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S
..2. Size:664K lrc
lmbt3946dw1t1g.pdf 
LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S
8.1. Size:414K lrc
lmbt3904n3t5g.pdf 
LMBT3904N3T5G S-LMBT3904N3T5G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT883 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Mar
8.2. Size:1148K lrc
lmbt3906n3t5g.pdf 
LMBT3906N3T5G 3 S-LMBT3906N3T5G 1 General Purpose Transistors PNP Silicon 2 1. FEATURES We declare that the material of product compliance with SOT883 RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. COLLECTOR 3 2. DEVICE MARKING AND ORDERING INF
8.3. Size:357K lrc
lmbt3906lt1g lmbt3906lt3g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. LMBT3906LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT3906LT1G ORDERING INFORMATION 3 Device Marking Shipping LMBT3906LT1G 2A 3000
8.4. Size:590K lrc
lmbt3904lt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURES LMBT3904LT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. S-LMBT3904LT1G 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU
8.5. Size:584K lrc
lmbt3906wt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906WT1G FEATURES S-LMBT3906WT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 DEVICE MARKING AND ORDERING I
8.6. Size:222K lrc
lmbt3904tt1g lmbt3904tt3g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1G RoHS requirements. S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking
8.7. Size:643K lrc
lmbt3904lt1g lmbt3904lt3g s-lmbt3904lt1g s-lmbt3904lt3g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes a LMBT3904LT1G Pb-Free Lead Finish S-LMBT3904LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable
8.8. Size:203K lrc
lmbt3906tt1g lmbt3906tt3g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with RoHS requirements. LMBT3906TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT3906TT1G ORDERING INFORMATION Device Mark
8.9. Size:203K lrc
lmbt3906tt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with RoHS requirements. LMBT3906TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT3906TT1G ORDERING INFORMATION Device Mark
8.10. Size:220K lrc
lmbt3908lt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes a LMBT3908LT1G Pb-Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site S-LMBT3908LT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 3 Device Marking Shipping LMBT3908LT1G 1AM 3000/Tape & Re
8.12. Size:358K lrc
lmbt3904lt1g lmbt3904lt3g.pdf 
LMBT3904LT1G S-LMBT3904LT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic
8.14. Size:632K lrc
lmbt3906lt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G S-LMBT3906LT1G FEATURES 1) We declare that the material of product compliant with 3 RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 DEVICE MARKING AND ORDERING I
8.15. Size:221K lrc
lmbt3904tt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1G RoHS requirements. S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking
8.16. Size:554K lrc
lmbt3904dw1t1g lmbt3904dw1t3g.pdf 
LMBT3904DW1T1G S-LMBT3904DW1T1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V Simplifi
8.17. Size:616K lrc
lmbt3904wt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURES LMBT3904W T1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. S-LMBT3904W T1G 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable. 1 DEVICE MARKING AND RESISTOR
8.18. Size:471K lrc
lmbt3904wt1g lmbt3904wt3g.pdf 
LMBT3904WT1G S-LMBT3904WT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic
8.19. Size:506K lrc
lmbt3904dw1t1g.pdf 
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3904DW1T1G device is a spin off of our popular LMBT3904DW1T1G SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT 363 S-LMBT3904DW1T1G six leaded surface mount package. By putting two discrete devices in one package , this device is ideal fo
8.20. Size:243K inchange semiconductor
lmbt3904lt1g.pdf 
isc Silicon NPN RF Transistor LMBT3904LT1G DESCRIPTION Low Noise Figure NF = 5 dB(MAX) @V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0k CE C S Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
Другие транзисторы: LMBT3904DW1T3G, LMBT3904LT3G, LMBT3904TT3G, LMBT3904WT3G, LMBT3906LT3G, LMBT3906N3T5G, LMBT3906TT3G, LMBT3906WT3G, TIP42C, LMBT3946DW1T3G, LMBT4401LT3G, LMBT4401WT3G, LMBT4403LT3, LMBT5401DW1T3G, LMBT5401LT3G, LMBT5541DW1T3G, LMBT5550LT1G
