LMBT5551LT3G datasheet, аналоги, основные параметры

Наименование производителя: LMBT5551LT3G

Маркировка: G1

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.225 W

Макcимально допустимое напряжение коллектор-база (Ucb): 180 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT23

 Аналоги (замена) для LMBT5551LT3G

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LMBT5551LT3G даташит

 ..1. Size:166K  lrc
 lmbt5550lt3g lmbt5551lt3g lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5551LT3G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3

 ..2. Size:395K  lrc
 lmbt5551lt1g lmbt5551lt3g.pdf pdf_icon

LMBT5551LT3G

LMBT5551LT1G S-LMBT5551LT1G High Voltage Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. SOT23 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMB

 4.1. Size:166K  lrc
 lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5551LT3G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3

 4.2. Size:166K  lrc
 lmbt5551lt1g.pdf pdf_icon

LMBT5551LT3G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3

ПОКАЗАТЬ ЕЩЁ

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