Биполярный транзистор 2N4403TF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N4403TF
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 8.5 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO92
2N4403TF Datasheet (PDF)
2n4403bu 2n4403tf 2n4403tfr 2n4403ta 2n4403tar mmbt4403.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
2n4402 2n4403.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4402/DGeneral Purpose Transistors2N4402PNP Silicon*2N4403*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 40 VdcEmitterBase Voltage
2n4403 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4403PNP switching transistor1999 Apr 23Product specificationSupersedes data of 1997 May 05Philips Semiconductors Product specificationPNP switching transistor 2N4403FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter Industr
2n4403 mmbt4403.pdf
2N4403 MMBT4403CEC TO-92BSOT-23BEMark: 2TPNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage40VVEBO Emitter-Base Voltage 5.0
2n4402-2n4403.pdf
2N4402/4403 PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation
umt4403 sst4403 mmst4403 2n4403.pdf
Transistors UMT4403 / SST4403 / MMST4403 / 2N4403(SPEC-A31)602Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon act
2n4402 2n4403.pdf
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2n4403.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2N4403Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole Package Capable of 600mWatts of Power DissipationPNP General Epoxy meets UL 94 V-0 flammability ratingPurpose Amplifier Moisure Sensitivity Level 1 Marking:Type number Lead Free
2n4403g.pdf
2N4403Preferred Device General PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO 40 Vdc1EMITTERCollector - Base Voltage VCBO 40 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipatio
2n4403-d.pdf
2N4403Preferred Device General PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO 40 Vdc1EMITTERCollector - Base Voltage VCBO 40 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipatio
2n4403.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 32N4403-T9
2n4403.pdf
2N4403PNP TransistorElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FEATURESPower Dissipationo C MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40VEmitter-Base Volta
2n4403.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2N4403 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMILTTER 2. BASE 3. COLLECTOR Equivalent Circuit 2N4403 = Device code 2 NSolid dot = Green molding compound device, 4 4 0 3if none, the normal deviceXX XXX XXX = Code
2n4403sc.pdf
SEMICONDUCTOR 2N4403SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURES Complementary to the 2N4401SCDIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90J 0.10K 0.00 ~ 0.10MAXIMUM RATING (Ta=25)L 0.55M 0.20 MINCHARACTERISTIC SYMBOL RAT
2n4403.pdf
2N4403(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power dissipation 0.625 W
2n4403.pdf
2N4403General Purpose TransistorsTO-92PNP Silicon COLLECTOR32BASE11. EMITTER 2312. BASEEMITTER3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2N4403UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base Voltage VEBO-5.0 VdcCollector Current IC-600 mAdcTotal Device Dissipation T =25 C PD 625 mWAJu
h2n4403.pdf
Spec. No. : HE6221HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5H2N4403PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4403 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4401 High Power Dissipation: 625mW at 25C High DC Current Gain: 100-300 at 150m
2n4403a3.pdf
Spec. No. : C305A3 Issued Date : 2003.06.13 CYStech Electronics Corp.Revised Date : 2014.05.12 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor 2N4403A3Description The 2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA.
2n4403.pdf
2N4403 Rev.F Sep.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications 500mA General purpose amplifier and switch requiring collector currents u
2n4402 2n4403.pdf
2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage
2n4403.pdf
SEMICONDUCTOR2N4403TECHNICAL DATAGeneral Purpose TransistorsPNP SiliconORDERING INFORMATION3Device Marking Shipping22N4403LT1G 2T 3000/Tape & Reel1SOT23MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V CEO 40 Vdc3CollectorBase Voltage V CBO 40 VdcCOLLECTOREmitterBase Voltage V EBO 5.0 VdcCollector Current Cont
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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