MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC337/DAmplifier TransistorsNPN SiliconBC337,-16,-25,-40BC338,-16,-25,-40COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC337 BC338 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 45 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 50 30 VdcEmitterBase Voltage VEB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC337/DAmplifier TransistorsNPN SiliconBC337,-16,-25,-40BC338,-16,-25,-40COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC337 BC338 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 45 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 50 30 VdcEmitterBase Voltage VEB

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC337NPN general purpose transistor1999 Apr 15Product specificationSupersedes data of 1997 Mar 10Philips Semiconductors Product specificationNPN general purpose transistor BC337FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS3 collector

BC817; BC817W; BC33745 V, 500 mA NPN general-purpose transistorsRev. 06 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors.Table 1. Product overviewType number Package PNP complementNXP JEITABC817 SOT23 - BC807BC817W SOT323 SC-70 BC807WBC337[1] SOT54 (TO-92) SC-43A BC327[1] Also available in SOT54A and SOT54 va

BC337-25BC337-40SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC337-25 BC337-25 TO-92 / BulkBC337-25-AP BC337-25 TO-92 / AmmopackBC337-40 BC337-40 TO-92 / BulkBC337-40-AP BC337-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTORS TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLYTO-92 TO-92 THE PNP COMPLEMENTARY TYPES

BC337-16BC337-25E TO-92BCNPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourced fromProcess 12. See TN3019A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCES Collector-Base Voltage

BC337/338Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC337 50 V: BC338 30 VVCEO Collector-Emitter Volt

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC337 and BC338Vishay Semiconductorsformerly General SemiconductorSmall Signal Transistors (NPN)TO-226AA (TO-92)Features NPN Silicon Epitaxial Planar Transistors for switching0.142 (3.6)0.181 (4.6)and amplifier applications. Especially suited for AF-driverstages and low power output stages. These types are also available subdivided into threegroups -16, -25, and -4

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BC337-xBK / BC338-xBKBC337-xBK / BC338-xBKGeneral Purpose Si-Epitaxial Planar TransistorsNPN NPNSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2010-05-270.1 Power dissipation 625 mW4.6VerlustleistungPlastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gPlastic material has UL classification 94V-0C B EGehusematerial UL9

MCCBC337-16/25/40TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsBC338-16/25/40CA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors Lead Free Fin

BC337, BC337-25,BC337-40Amplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These are Pb-Free DevicesCOLLECTOR12MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO 45 Vdc3EMITTERCollector - Base Voltage VCBO 50 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 800 mAdcTotal Device Dissipation @ TA = 25

SBC337NPN Silicon TransistorDescriptions PIN Connection High current application C Switching application BFeatures Suitable for AF-Driver stage and low E power output stages Complementary pair with SBC327 TO-92 Ordering Information Type NO. Marking Package Code SBC337 SBC337 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol R

BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1112Base 222J3Emitter 333CLASSIFICATION OF hFE A DProduct-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. BMin. Max. A 4.40 4.70 Product-Rank B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC327/A BC328 PNPSILICON PLANAR EPITAXIAL TRANSISTORSBC337/A BC338 NPNTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCGeneral Purpose Transistors Best Suited for use in Driver and Output Stages of Audio AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.BASE Symbol Parameter Value Unit3. EMITTER VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 VE

SEMICONDUCTOR BC337TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURESHigh Current : IC=800mA.DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).N DIM MILLIMETERSFor Complementary with PNP type BC327.A 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_H J 14.

BC337/338(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 V IC Col

BC337/BC338NPN General Purpose TransistorCOLLECTOR1P b Lead(Pb)-FreeTO-922BASE13 23EMITTERMaximum Ratings(TA=25C unless otherwise noted)Rating Symbol BC337 BC338 UnitVCBOCollector-Base voltage50 30 VVCEOVCollector-Emitter voltage 45 25VEBOVEmitter-Base voltage5.0 5.0Collector Current Continuous lCmA800Total Device DissipationPD625 mW/

BC337M(BR3DG337M)Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , BC327M(BR3CG327M)High current, complementary pair with BC327M(BR3CG327M). / Applications General power amplifier and switching.

BC337 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92(R) NPN Silicon NPN transistor in a TO-92(R) Plastic Package. / Features , BC327 High current, complementary pair with BC327. / Applications General purpose application and switching. / Equival

SEMICONDUCTOR BC337/338 TECHNICAL DATABC337/BC338 TRANSISTOR (NPN) B CFEATURESHigh Current : IC=800mA.DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).DIM MILLIMETERSFor Complementary with PNP type BC327.A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50L 2.30Symb

DIP Type TransistorsNPN TransistorsBC337 (KC337)TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=0.5A 0.46 0.10 Collector Emitter Voltage VCEO=45VC Complement to BC327.+0.101.27TYP 1.27TYP 0.38 0.051 2 3B [1.27 0.20] [1.27 0.20]3.60 0.20E 1. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25

isc Silicon NPN Transistor BC337DESCRIPTIONLow VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF-Driver stages and low power output stages.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBOV Collector-Emitter Voltage 45 VCEOV Emitter-Base Voltage 5 VEBOI Col