2SA1214 - описание и поиск аналогов

isc Silicon PNP Power Transistor 2SA1214 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE

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2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max

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2SA1213-O/2SA1213-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO -50 IC=-100 A, IE=0 Collector-Base Breakdown Voltage V V(BR)CEO -50 IC=-10mA, IB=0 Collector-Emitter Breakdown Voltag V V(BR)EBO -5 IE=-100 A, IC=0 Emitter-Base Breakdown Voltage V ICBO VCB=-50V, IE=0 Collector-Base Cutoff Current -0.1 A IEB

2SA1213-O MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1213-Y CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Low Saturation voltage VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

2SA1213-O MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1213-Y CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Low Saturation voltage VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package 3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo

JMnic Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION With MT-200 package Complement to type 2SC2921 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO

JMnic Product Specification Silicon PNP Power Transistors 2SA1217 DESCRIPTION With TO-126 package Complement to type 2SC2877 Good linearity of hFE APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Ba

JMnic Product Specification Silicon PNP Power Transistors 2SA1216 DESCRIPTION With MT-200 package Complement to type 2SC2922 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO

LAPT 2SA1215 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB= 160V 100max A 0.2 24.4 2.1 VCEO 160 V IEBO VEB=

LAPT 2SA1216 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) Application Audio and General Purpose Electrical Characteristics (Ta=25 C) External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Symbol Ratings Unit SymboI Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 180 V VCBO VCB= 180V 100max A 0.2 24.4 2.1 0.1 VCEO 180 V IEBO

2SA1 21 3 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package 3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V

2SA1213 -89 Plastic-Encapsulate Transistors SOT TRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package 1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time 3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (T

Complementary NPN-PNP Power Bipolar Transistor R 2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltage V =160V (min) CEO CEO NPN-PNP Complementary NPN-

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector C

SMD Type Transistors PNP Transistors 2SA1213 1.70 0.1 Features Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time tstg = 1.0us (typ.) Small Flat Package 0.42 0.1 0.46 0.1 PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B

CHENMKO ENTERPRISE CO.,LTD 2SA1213GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat) =-0.5V(max.)(IC=-1A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. 1.7MAX. 0.4

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless other

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless other

2SA1213SQ PNP Transistor Features SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the NPN Transistor 2SC2873SQ is Recommended. Equivalent Circuit 1.Base 2.Collector 3. Emitter 2.Collector Marking Code 2SA1213SQ-O NX 2SA1213SQ-Y NY 1.Base 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless oth

2SA1213 SOT-89 Ty p PNP Transistors 3 Features Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -1A) 2 High Speed Switching Time tstg = 1.0us (typ.) 1 1.Base Small Flat Package 2.Collector 3.Emitter PC = 1 to 2W (mounted on ceramic substrate) Simplified outline(SOT-89) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

2SA1213 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to 2SC2873 Power Amplifier and Switching Application Low Saturation Voltage High Speed Switching Time Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 2

isc Silicon PNP Power Transistor 2SA1215 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2921 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon PNP Power Transistor 2SA1217 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2877 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. Suitable for output stage of 5

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1216 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2922 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 )