isc Silicon PNP Power Transistor 2SA1214DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE

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2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max

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2SA1213-O/2SA1213-YElectrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO -50IC=-100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO -50IC=-10mA, IB=0Collector-Emitter Breakdown Voltag VV(BR)EBO -5IE=-100A, IC=0Emitter-Base Breakdown Voltage VICBO VCB=-50V, IE=0Collector-Base Cutoff Current -0.1 AIEB

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo

JMnic Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION With MT-200 package Complement to type 2SC2921 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

JMnic Product SpecificationSilicon PNP Power Transistors 2SA1217 DESCRIPTION With TO-126 package Complement to type 2SC2877 Good linearity of hFE APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Ba

JMnic Product Specification Silicon PNP Power Transistors 2SA1216 DESCRIPTION With MT-200 package Complement to type 2SC2922 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

LAPT 2SA1215Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 160 V ICBO VCB=160V 100max A0.224.42.1VCEO 160 V IEBO VEB=

LAPT 2SA1216Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)Application : Audio and General Purpose Electrical Characteristics (Ta=25C) External Dimensions MT-200 Absolute maximum ratings (Ta=25C)Symbol Ratings Unit SymboI Conditions Ratings Unit0.26.00.336.4VCBO 180 V VCBO VCB=180V 100max A0.224.42.10.1VCEO 180 V IEBO

2SA1 21 3TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V

2SA1213-89 Plastic-Encapsulate TransistorsSOTTRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (T

Complementary NPN-PNP Power Bipolar Transistor R2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltageV =160V (min) CEO CEO NPN-PNP Complementary NPN-

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector C

SMD Type TransistorsPNP Transistors 2SA12131.70 0.1FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)High Speed Switching Time: tstg = 1.0us (typ.)Small Flat Package0.42 0.10.46 0.1PC = 1 to 2W (mounted on ceramic substrate)Complementary to 2SC28731.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

CHENMKO ENTERPRISE CO.,LTD2SA1213GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 AmpereAPPLICATION* Power amplifier .FEATURESC-62/SOT-89* Small flat package. (SC-62/SOT-89)* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.0 to 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.1.7MAX. 0.4

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other

2SA1213SQ PNP TransistorFeatures SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the NPNTransistor 2SC2873SQ is Recommended.Equivalent Circuit 1.Base 2.Collector 3. Emitter2.CollectorMarking Code : 2SA1213SQ-O : NX 2SA1213SQ-Y : NY1.Base3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless oth

2SA1213 SOT-89 Ty p PNP Transistors3FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)2High Speed Switching Time: tstg = 1.0us (typ.)1 1.BaseSmall Flat Package2.Collector3.EmitterPC = 1 to 2W (mounted on ceramic substrate) Simplified outline(SOT-89)Complementary to 2SC2873Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

2SA1213BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to 2SC2873 Power Amplifier and Switching Application Low Saturation Voltage High Speed Switching Time Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 2

isc Silicon PNP Power Transistor 2SA1215DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2921Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon PNP Power Transistor 2SA1217DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2877Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.Suitable for output stage of 5

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1216DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2922Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)