Справочник транзисторов. BC846CLT1G

 

Биполярный транзистор BC846CLT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BC846CLT1G
   Маркировка: 3C*
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 270
   Корпус транзистора: SOT23

 Аналоги (замена) для BC846CLT1G

 

 

BC846CLT1G Datasheet (PDF)

 ..1. Size:158K  onsemi
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC846CLT1G
BC846CLT1G

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.1. Size:216K  onsemi
bc846amtf bc846bmtf bc846cmtf bc847amtf bc847bmtf bc847cmtf bc848bmtf bc848cmtf bc850amtf bc850cmtf.pdf

BC846CLT1G
BC846CLT1G

BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A

 8.2. Size:242K  semtech
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC846CLT1G
BC846CLT1G

BC846BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

 8.3. Size:145K  comchip
bc846c-g bc847b-g.pdf

BC846CLT1G
BC846CLT1G

Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)

 8.4. Size:2177K  wpmtek
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC846CLT1G
BC846CLT1G

BC846/847/848/849/850 TRANSISTORNPNFEATURES Low current (max. 100 mA) Low voltage (max. 65 V).APPLICATIONS General purpose switching and amplification.1.Base 2.Emitter 3.Collector DESCRIPTIONSOT-23 Plastic PackageNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Symbol Val

 8.5. Size:3444K  cn twgmc
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC846CLT1G
BC846CLT1G

BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC8 46 THRU BC8 50TRANSISTOR(NPN)FEATURE Low current (max. 100 mA)SOT-23 Low voltage (max. 65 V).1BASE APPLICATIONS2EMITTER General purpose switching and amplification. 3COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/86

 8.6. Size:158K  cn fosan
bc846a bc847a bc848a bc846b bc847b bc848b bc846c bc847c bc848c.pdf

BC846CLT1G
BC846CLT1G

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846BC847BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B,BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V

 8.7. Size:682K  cn hottech
bc846a bc846b bc846c.pdf

BC846CLT1G
BC846CLT1G

BC846BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC856 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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