Справочник транзисторов. BC847CDXV6T5G

 

Биполярный транзистор BC847CDXV6T5G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BC847CDXV6T5G
   Маркировка: 1G*_1M*
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.357 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 1.5 pf
   Статический коэффициент передачи тока (hfe): 420
   Корпус транзистора: SOT563

 Аналоги (замена) для BC847CDXV6T5G

 

 

BC847CDXV6T5G Datasheet (PDF)

 ..1. Size:96K  onsemi
bc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf

BC847CDXV6T5G
BC847CDXV6T5G

BC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General PurposeTransistorshttp://onsemi.comNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forlow power surface mount applications.Q1 Q2Features These are Pb-Free Devices(4) (5) (6)BC847CDXV6T1MAXIMUM RATINGSRating Symb

 ..2. Size:200K  onsemi
bc847cdxv6t1g sbc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf

BC847CDXV6T5G
BC847CDXV6T5G

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

 3.1. Size:68K  onsemi
bc848cdxv6t1g bc847cdxv6t1g.pdf

BC847CDXV6T5G
BC847CDXV6T5G

BC847CDXV6T1,BC847CDXV6T5BC848CDXV6T1,BC848CDXV6T5Dual General Purposehttp://onsemi.comTransistorsNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-563 which is designed forQ1 Q2low power surface mount applications. Lead-Free Solder Plating(4) (5) (6)MAXIMUM RATINGSBC847CDXV6T1Rating Symb

 3.2. Size:132K  onsemi
bc847cdxv6t1g bc848cdxv6t1g.pdf

BC847CDXV6T5G
BC847CDXV6T5G

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

 3.3. Size:128K  onsemi
sbc847cdxv6t1g.pdf

BC847CDXV6T5G
BC847CDXV6T5G

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top