BD435S. Аналоги и основные параметры
Наименование производителя: BD435S
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 32 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO-126
Аналоги (замена) для BD435S
- подборⓘ биполярного транзистора по параметрам
BD435S даташит
9.1. Size:73K st
bd433 bd435 bd437 bd434 bd436 bd438.pdf 
BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in 1 2 car-radio output
9.2. Size:51K st
bd433 bd434 bd435 bd436 bd437 bd438.pdf 
BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car
9.3. Size:44K fairchild semi
bd433 bd435 bd437.pdf 
BD433/435/437 Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD433 22 V BD435 32 V BD437 45 V VCES Collector-Emitter Voltage BD433
9.4. Size:57K samsung
bd433 bd435 bd437.pdf 
BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING TO-126 APPLICATIONS Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD433 VCBO 22 V BD435 32 V BD437 45 V Collector Emitter Voltage BD433 VCES 22 V BD435 32 V 1. Emitter 2.Collector 3.Base BD437 45 V
9.5. Size:76K onsemi
bd435g bd437g bd439g bd441g.pdf 
BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. http //onsemi.com Features 4.0 AMPERES Complementary Types are BD438 and BD442 POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* NPN SILICON MAXIMUM RATINGS COLLECTOR
9.6. Size:59K onsemi
bd435 bd437 bd439 bd441.pdf 
BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types http //onsemi.com are BD438 and BD442. 4.0 AMPERES Features POWER TRANSISTORS Pb-Free Packages are Available* NPN SILICON MAXIMUM RATI
9.7. Size:60K onsemi
bd435g.pdf 
BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types http //onsemi.com are BD438 and BD442. 4.0 AMPERES Features POWER TRANSISTORS Pb-Free Packages are Available* NPN SILICON MAXIMUM RATI
9.8. Size:130K cdil
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434 BD435 BD436 BD437 BD438 BD439 BD440 BD441 BD442 NPN PNP E C TO126 B Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNIT BD434 BD436
9.9. Size:280K jiangsu
bd433 bd435 bd437.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433 / BD435 / BD437 TRANSISTOR (NPN) TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD434, BD436 And BD438 2. COLLECTOR 3. BASE Equivalent Circuit BD433 BD435 BD437 XX XX XX BD433,BD435,BD437=Device code Solid dot = Green molding
9.10. Size:199K lge
bd433 bd435 bd437.pdf 
BD433/435/437(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Amplifier and switching applications 2.500 7.400 2.900 1.100 7.800 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900 Symbol Parameter Value Units 3.000 4.100 3.200 VCBO Collector-Base Voltage BD433 22 10.600 0.000 BD435 32 V 11.000 0.300 BD437 45
9.13. Size:117K inchange semiconductor
bd433 bd435 bd437.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437 DESCRIPTION With TO-126 package Complement to type BD434/436/438 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIO
9.14. Size:187K inchange semiconductor
bd435.pdf 
isc Silicon NPN Power Transistor BD435 DESCRIPTION Collector-Emitter Sustaining Voltage - V = 32V(Min) CEO(SUS) Complement to type BD436 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba
Другие транзисторы: BD13910STU, BD13916S, BD13916STU, BD1396STU, BD14010STU, BD14016S, BD14016STU, BD433S, BC327, BD435STU, BD437S, BD787G, BD788G, BF720T3G, BU406TU, EMX2DXV6T5, FJA4213OTU
