Биполярный транзистор BD435S - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD435S
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 32 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO-126
BD435S Datasheet (PDF)
bd433 bd435 bd437 bd434 bd436 bd438.pdf
BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.The BD433 is especially suitable for use in12car-radio output
bd433 bd434 bd435 bd436 bd437 bd438.pdf
BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.12The BD433 is especially suitable for use in3car
bd433 bd435 bd437.pdf
BD433/435/437Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD433 22 V: BD435 32 V: BD437 45 V VCES Collector-Emitter Voltage: BD433
bd433 bd435 bd437.pdf
BD433/435/437 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHINGTO-126APPLICATIONS Complement to BD434, BD436 and BD438 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD433 VCBO 22 V: BD435 32 V: BD437 45 V Collector Emitter Voltage : BD433 VCES 22 V: BD435 32 V1. Emitter 2.Collector 3.Base: BD437 45 V
bd435g bd437g bd439g bd441g.pdf
BD435G, BD437G, BD439G,BD441GPlastic Medium-PowerSilicon NPN TransistorsThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications.http://onsemi.comFeatures4.0 AMPERES Complementary Types are BD438 and BD442POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*NPN SILICONMAXIMUM RATINGSCOLLECTOR
bd435 bd437 bd439 bd441.pdf
BD435, BD437, BD439,BD441Plastic Medium PowerSilicon NPN TransistorThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications. Complementary typeshttp://onsemi.comare BD438 and BD442.4.0 AMPERESFeaturesPOWER TRANSISTORS Pb-Free Packages are Available*NPN SILICONMAXIMUM RATI
bd435g.pdf
BD435, BD437, BD439,BD441Plastic Medium PowerSilicon NPN TransistorThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications. Complementary typeshttp://onsemi.comare BD438 and BD442.4.0 AMPERESFeaturesPOWER TRANSISTORS Pb-Free Packages are Available*NPN SILICONMAXIMUM RATI
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD433 BD434BD435 BD436BD437 BD438BD439 BD440BD441 BD442NPN PNPECTO126 BPlastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNITBD434 BD436
bd433 bd435 bd437.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD433 / BD435 / BD437 TRANSISTOR (NPN)TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD434, BD436 And BD438 2. COLLECTOR3. BASE Equivalent Circuit BD433 BD435 BD437 XX XX XXBD433,BD435,BD437=Device code Solid dot = Green molding
bd433 bd435 bd437.pdf
BD433/435/437(NPN)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Amplifier and switching applications 2.5007.4002.9001.1007.8001.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900Symbol Parameter Value Units3.0004.1003.200VCBO Collector-Base Voltage BD433 22 10.6000.000 BD435 32 V 11.0000.300 BD437 45
hsbd435.pdf
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD435 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
hbd435.pdf
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD435 APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector Dissipation
bd433 bd435 bd437.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437 DESCRIPTION With TO-126 package Complement to type BD434/436/438 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIO
bd435.pdf
isc Silicon NPN Power Transistor BD435DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = 32V(Min)CEO(SUS)Complement to type BD436Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
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