Биполярный транзистор MMBTA93L - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMBTA93L
Маркировка: 2x*
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: SOT23
MMBTA93L Datasheet (PDF)
mmbta92l smmbta92l mmbta93l.pdf
MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITTER
mmbta92lt1 mmbta93lt1.pdf
MMBTA92LT1G,MMBTA93LT1GHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS1Rating Symbol 92 93 UnitBASECollector-Emitter Voltage VCEO -300 -200 VdcCollector-Base Voltage VCBO -300 -200 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 -5.0 VdcCollector Curren
mmbta92l mmbta93.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA92LT1/DHigh Voltage Transistors*MMBTA92LT1COLLECTORPNP Silicon3MMBTA93LT1*Motorola Preferred Device1BASE2EMITTER3MAXIMUM RATINGS1Rating Symbol MMBTA92 MMBTA93 Unit2CollectorEmitter Voltage VCEO 300 200 VdcCollectorBase Voltage VCBO 300 200 VdcCASE 31808, STYLE 6SOT
mmbta92 smmbta92 mmbta93.pdf
MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITT
mmbta92 mmbta93.pdf
SEMICONDUCTOR MMBTA92/93TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA42/43._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.1
mmbta93.pdf
MMBTA93TRANSISTOR(PNP)SOT23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA43 1. BASE MARKING:YW 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -200 V CBOV Collector-Emitter Voltage -200 V CEOV Emitter-Base Voltage -5 V EBOIC Collec
mmbta92 mmbta93.pdf
MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage MMBTA92300 V -VCBO MMBTA93200 Collector Emitter Voltage MMBTA92 300 V -VCEO MMBTA93 200 5 VEmitter Base Voltage -VEBO 500 mACollector Cur
mmbta92 mmbta93.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA92/MMBTA93 MAXIMUM RATINGS Characteristic Symbol Unit(MMBTA92) (MMBTA93) Collector-Emitter VoltageVCEO -300 -200 Vdc-Collector-Base VoltageVCBO -300 -200 Vdc-Emitter-Base VoltageVEBO -6.0 -6.0 Vdc
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050