Биполярный транзистор NJVMJB45H11 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NJVMJB45H11
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 230 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: D2PAK
Аналоги (замена) для NJVMJB45H11
NJVMJB45H11 Datasheet (PDF)
njvmjb44h11 njvmjb45h11.pdf
MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and
mjb44h11 njvmjb44h11 mjb45h11 njvmjb45h11.pdf
MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and
mjb41c njvmjb41ct4g mjb42c njvmjb42ct4g.pdf
MJB41C,NJVMJB41CT4G (NPN),MJB42C,NJVMJB42CT4G (PNP)Complementary SiliconPlastic Power Transistors http://onsemi.comD2PAK for Surface MountCOMPLEMENTARY SILICONPOWER TRANSISTORSFeatures6 AMPERES, Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)100 VOLTS, 65 WATTS Electrically the Same as TIP41 and T1P42 SeriesMARKING NJV Prefix for
njvmjb41ct4g njvmjb42ct4g.pdf
MJB41C,NJVMJB41CT4G (NPN),MJB42C,NJVMJB42CT4G (PNP)Complementary SiliconPlastic Power Transistors http://onsemi.comD2PAK for Surface MountCOMPLEMENTARY SILICONPOWER TRANSISTORSFeatures6 AMPERES, Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)100 VOLTS, 65 WATTS Electrically the Same as TIP41 and T1P42 SeriesMARKING NJV Prefix for
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MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas
njvmjd44e3.pdf
MJD44E3,NJVMJD44E3T4GDarlington Power TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching output or driverhttp://onsemi.comstages in applications such as switching regulators, converters, andpower amplifiers.NPN DARLINGTON SILICONFeaturesPOWER TRANSISTORS Electrically Similar to Popular D44E3 Device10 AMPERES High DC Gain
njvmjd47t4g njvmjd50t4g.pdf
MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT
njvmjd41c njvmjd42c.pdf
MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S
njvmjd148.pdf
MJD148, NJVMJD148T4GNPN Silicon PowerTransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf
MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR
njvmjd31 njvmjd32.pdf
MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR
njvmjd6039t4g.pdf
MJD6039, NJVMJD6039T4GDarlington PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output orhttp://onsemi.comdriver stages in applications such as switching regulators, convertors,and power amplifiers.SILICON FeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES,(No S
njvmjd122 njvmjd127.pdf
MJD122, NJVMJD122(NPN), MJD127,NJVMJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements
njvmjd243 njvmjd253.pdf
MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu
njvmjd340 njvmjd350.pdf
MJD340,NJVMJD340T4G (NPN),MJD350,NJVMJD350T4G (PNP)High Voltage Powerhttp://onsemi.comTransistorsDPAK For Surface Mount ApplicationsSILICONDesigned for line operated audio output amplifier, switchmodePOWER TRANSISTORSpower supply drivers and other switching applications.0.5 AMPEREFeatures300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S
njvmjd128.pdf
MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo
njvmjd2955 njvmjd3055.pdf
MJD2955 (PNP),MJD3055 (NPN)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose amplifier and low speed switchingapplications.SILICONFeatures POWER TRANSISTORS10 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)60 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (
njvmjd210 mjd200.pdf
MJD200 (NPN),MJD210 (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES High DC Current Gain25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix
njvmjd44h11 njvmjd45h11.pdf
MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf
MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf
NJVMJD3xxT4G-VF01Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesSILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix)3 AMPERES Lead Formed Version in 16 mm
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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