Биполярный транзистор NST3904MX2 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NST3904MX2
Маркировка: AH*
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.165 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: X2DFN3
Аналоги (замена) для NST3904MX2
NST3904MX2 Datasheet (PDF)
nst3904mx2.pdf
DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose Transistor3NPN Silicon1BASENST3904MX22EMITTERFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGS2X2DFN3 (1.0 x 0.6 mm)Rating Symbol Value UnitCASE 714ACCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 V
nst3904dp6.pdf
NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst3904dxv6t1g nsvt3904dxv6t1g nst3904dxv6t5g.pdf
Dual General PurposeTransistorNST3904DXV6T1G,NSVT3904DXV6T1G,NST3904DXV6T5Gwww.onsemi.comThe NST/NSV3904DXV6 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563(3) (2) (1)six-leaded surface mount package. By putting two discrete devices inone package, this device is ide
nst3904f3t5g.pdf
DATA SHEETwww.onsemi.comNPN General PurposeCOLLECTOR3Transistor1NST3904F3T5GBASEThe NST3904F3T5G device is a spin-off of our popular2SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isEMITTERdesigned for general purpose amplifier applications and is housed inthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where
nst3904dxv6t1-5.pdf
NST3904DXV6T1,NST3904DXV6T5Dual General PurposeTransistorThe NST3904DXV6T1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power su
nst3904dxv6t.pdf
NST3904DXV6T1,NSVT3904DXV6T1,NST3904DXV6T5,SNST3904DXV6T5Dual General Purposehttp://onsemi.comTransistorThe NST3904DXV6T1 device is a spin-off of our popular(3) (2) (1)SOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in Q1 Q2one packag
nst3904f3.pdf
NST3904F3T5GNPN General PurposeTransistorThe NST3904F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
nst3904dp6t5g.pdf
NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication
lnst3904f3t5g.pdf
LESHAN RADIO COMPANY, LTD.NPN General PurposeTransistorLNST3904F3T5GThe LNST3904F3T5G device is a spin-off of our popularS-LNST3904F3T5GSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inthe SOT-1123 surface mount package. This device is ideal forCOLLECTORlow-power surface mount applications where boar
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BTC2880M3
History: BTC2880M3
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050