Биполярный транзистор NST3906MX2 Даташит. Аналоги
Наименование производителя: NST3906MX2
Маркировка: AF*
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.165 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: X2DFN3
Аналог (замена) для NST3906MX2
NST3906MX2 Datasheet (PDF)
nst3906mx2.pdf

DATA SHEETwww.onsemi.comGeneral Purpose Transistor COLLECTOR3PNP Silicon1NST3906MX2BASEFeatures2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSEMITTERCompliant3MAXIMUM RATINGS1Rating Symbol Value Unit2Collector-Emitter Voltage VCEO -40 VdcX2DFN3 (1.0 x 0.6 mm)CASE 714ACCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0
nst3906dxv6t1 nst3906dxv6t5.pdf

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power
nst3906f3t5g.pdf

NST3906F3T5GPNP General PurposeTransistorThe NST3906F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
nst3906dxv6t1-5.pdf

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power
Другие транзисторы... NSS60101DMR6 , NSS60200DMT , NSS60200L , NSS60201SMT , NSS60600MZ4 , NST1601CL , NST3904MX2 , NST3906DXV6T1 , S9014 , NST4617MX2 , NST65010MW6 , NST65011MW6 , NST846BMX2 , NST847AMX2 , NST847BMX2 , NST857AMX2 , NST857BMX2 .
History: MRF898 | BCX53SQ-10 | BD680H | TG51 | 2SC4485 | 2SA244A | 8550E
History: MRF898 | BCX53SQ-10 | BD680H | TG51 | 2SC4485 | 2SA244A | 8550E



Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc1735 | transistor 2sc5200 | 2sb560 transistor | a1273 | c3421 transistor | c644 transistor | fgpf4536 datasheet | p20nm60fp datasheet