Справочник транзисторов. NSV40200L

 

Биполярный транзистор NSV40200L - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSV40200L
   Маркировка: VA*
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.46 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 62 pf
   Статический коэффициент передачи тока (hfe): 220
   Корпус транзистора: SOT23

 Аналоги (замена) для NSV40200L

 

 

NSV40200L Datasheet (PDF)

 ..1. Size:86K  onsemi
nss40200l nsv40200l.pdf

NSV40200L
NSV40200L

NSS40200L, NSV40200L40 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is im

 0.1. Size:127K  onsemi
nsv40200lt1g.pdf

NSV40200L
NSV40200L

NSS40200LT1G,NSV40200LT1G40 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-40 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable

 6.1. Size:72K  onsemi
nsv40200uw6t1g.pdf

NSV40200L
NSV40200L

NSS40200UW6T1G,NSV40200UW6T1G40 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications http://onsemi.comwhere affordable efficient energy

 7.1. Size:86K  onsemi
nss40201lt1g nsv40201lt1g.pdf

NSV40200L
NSV40200L

NSS40201LT1G,NSV40201LT1G40 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These40 VOLTS, 2.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) TRA

 7.2. Size:106K  onsemi
nsv40201lt1g.pdf

NSV40200L
NSV40200L

NSS40201LT1G,NSV40201LT1G40 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These40 VOLTS, 2.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat)

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