Биполярный транзистор NSVBC856BM3 Даташит. Аналоги
Наименование производителя: NSVBC856BM3
Маркировка: 3B*
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.265 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора: SOT723
Аналог (замена) для NSVBC856BM3
NSVBC856BM3 Datasheet (PDF)
bc856bm3 nsvbc856bm3.pdf

BC856BM3, NSVBC856BM3General Purpose TransistorPNP SiliconThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-723 which is designed for lowpower surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifie
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-
nsvbc857blt3g.pdf

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other
nsvbc857cwt1g.pdf

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement
Другие транзисторы... NSV1C201L , NSV1C201MZ4 , NSV1C301CT , NSV20101J , NSV40200L , NSV40501UW3 , NSVBC818-40L , NSVBC849BLT1G , BC558 , NSVBCH807-16L , NSVBCH807-25L , NSVBCH807-40L , NSVBCH817-16L , NSVBCH817-25L , NSVBCH817-40L , NSVBT2222ADW1 , NSVF3007SG3 .
History: 2SA505 | PBSS4240V | MG75H2DL1 | MJE15035G | IMH4AFRA | RCP705
History: 2SA505 | PBSS4240V | MG75H2DL1 | MJE15035G | IMH4AFRA | RCP705



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