Биполярный транзистор TIP30AG - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TIP30AG
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220
TIP30AG Datasheet (PDF)
tip29g tip29ag tip29bg tip29cg tip30g tip30ag tip30bg tip30cg.pdf
TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
tip29a-tip29c tip30a-tip30c.pdf
TIP29A/29CTIP30A/30CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are siliconEpitaxial-Base NPN power transistors mounted inJedec TO-220 plastic package. They are intentedfor use in medium power linear and switching32applications.1The complementary PNP types ar
tip30 tip30a tip30b tip30c.pdf
July 2008TIP30/TIP30A/TIP30B/TIP30CPNP Epitaxial Silicon TransistorFeatures Complementary to TIP29/TIP29A/TIP29B/TIP29C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP30 - 40 V : TIP30A - 60 V : TIP30B - 80 V : TIP30C - 100 V VCEO Collector-Emitter Voltage : TIP30 - 40
tip29 tip29a tip29b tip29c tip30 tip30a tip30b tip30c.pdf
TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
tip30a.pdf
isc Silicon PNP Power Transistors TIP30ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = -0.7V(Max.)@I = -1.0ACE(sat) CComplement to Type TIP29AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switching
tip30 tip30a tip30b tip30c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP30/30A/30B/30C DESCRIPTION With TO-220C package Complement to type TIP29/29A/29B/29C APPLICATIONS For use in general purpose power amplifer and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050