TIP30G datasheet, аналоги, основные параметры
Наименование производителя: TIP30G 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO220
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Аналоги (замена) для TIP30G
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TIP30G даташит
..1. Size:268K onsemi
tip29g tip29ag tip29bg tip29cg tip30g tip30ag tip30bg tip30cg.pdf 
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
9.2. Size:87K st
tip2955 tip3055.pdf 
TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal sche
9.3. Size:51K st
tip29a-tip29c tip30a-tip30c.pdf 
TIP29A/29C TIP30A/30C COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching 3 2 applications. 1 The complementary PNP types ar
9.4. Size:527K fairchild semi
tip30 tip30a tip30b tip30c.pdf 
July 2008 TIP30/TIP30A/TIP30B/TIP30C PNP Epitaxial Silicon Transistor Features Complementary to TIP29/TIP29A/TIP29B/TIP29C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage TIP30 - 40 V TIP30A - 60 V TIP30B - 80 V TIP30C - 100 V VCEO Collector-Emitter Voltage TIP30 - 40
9.5. Size:49K samsung
tip30.pdf 
TIP30 SERIES (TIP30/30A/30B/30C) PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage TIP30 VCBO - 40 V TIP30A - 60 V TIP30B - 80 V TIP30C - 100 V Collector Emitter Voltage TIP30 VCEO - 40 V TIP30A - 60 V TIP30B
9.6. Size:66K central
tip30-a-b-c.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.7. Size:247K mcc
tip29-a-b-c tip30-a-b-c to-220.pdf 
MCC Micro Commercial Components TM TIP29,A,B,C(NPN) 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 TIP30,A,B,C(PNP) Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 Amp RoHS Compliant. See ordering information) Complementary Marking Type Number Rth(jc) is 4.167OC/W, Rth(ja) i
9.8. Size:83K onsemi
tip29-a-b-c tip30-a-b-c.pdf 
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. http //onsemi.com Features 1 AMPERE Pb-Free Packages are Available* POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS MARKING DIAGRAM 4 TO-220AB TIPxxxG CASE 2
9.9. Size:105K onsemi
tip29 tip29a tip29b tip29c tip30 tip30a tip30b tip30c.pdf 
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
9.10. Size:237K onsemi
tip3055 tip2955.pdf 
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http //onsemi.com Features DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell
9.11. Size:82K bourns
tip3055.pdf 
TIP3055 NPN SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE TIP2955 Series (TOP VIEW) 90 W at 25 C Case Temperature B 1 15 A Continuous Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temperature (unless otherwis
9.14. Size:311K cdil
tip29 tip30 a b c.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25
9.15. Size:290K cdil
tip2955f tip3055f.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-
9.16. Size:1156K jsmsemi
tip3055.pdf 
TIP3055 Silicon NPN Power Transistors DESCRIPTION With TO-247 package Complement to type TIP2955 90 W at 25 C case temperature 15 A continuous collector current APPLICATIONS Designed for general purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol
9.17. Size:192K inchange semiconductor
tip3055.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor TIP3055 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to Type TIP2955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose
9.18. Size:212K inchange semiconductor
tip30a.pdf 
isc Silicon PNP Power Transistors TIP30A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = -0.7V(Max.)@I = -1.0A CE(sat) C Complement to Type TIP29A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching
9.19. Size:214K inchange semiconductor
tip3055t.pdf 
isc Silicon NPN Power Transistor TIP3055T DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 4A CE(sat C Complement to Type TIP2955T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier
9.20. Size:212K inchange semiconductor
tip30.pdf 
isc Silicon PNP Power Transistors TIP30 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = -0.7V(Max.)@I = -1.0A CE(sat) C Complement to Type TIP29 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching ap
9.21. Size:119K inchange semiconductor
tip30 tip30a tip30b tip30c.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP30/30A/30B/30C DESCRIPTION With TO-220C package Complement to type TIP29/29A/29B/29C APPLICATIONS For use in general purpose power amplifer and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 )
9.22. Size:212K inchange semiconductor
tip30c.pdf 
isc Silicon PNP Power Transistors TIP30C DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = -0.7V(Max.)@I = -1.0A CE(sat) C Complement to Type TIP29C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching
9.23. Size:213K inchange semiconductor
tip30b.pdf 
isc Silicon PNP Power Transistors TIP30B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = -0.7V(Max.)@I = -1.0A CE(sat) C Complement to Type TIP29B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching
Другие транзисторы: TIP117G, TIP29AG, TIP29BG, TIP29CG, TIP29G, TIP30AG, TIP30BG, TIP30CG, A733, TIP31AG, TIP31BG, TIP31CG, TIP31G, TIP32AG, TIP32ATU, TIP32BG, TIP32CG
