LBC847ATT1G. Аналоги и основные параметры

Наименование производителя: LBC847ATT1G

Маркировка: 1E

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 110

Корпус транзистора: SOT89

 Аналоги (замена) для LBC847ATT1G

- подборⓘ биполярного транзистора по параметрам

 

LBC847ATT1G даташит

 ..1. Size:139K  lrc
lbc847att1g lbc847btt1g lbc847ctt1g.pdfpdf_icon

LBC847ATT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC847ATT1G These transistors are designed for general purpose amplifier S-LBC847ATT1G applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Series Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 7.1. Size:392K  lrc
lbc847awt1g.pdfpdf_icon

LBC847ATT1G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free

 7.2. Size:333K  lrc
lbc847alt1g.pdfpdf_icon

LBC847ATT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V Series ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS S-LBC846ALT1G requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Co

 7.3. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdfpdf_icon

LBC847ATT1G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO

Другие транзисторы: TIP42CG, TIP42CTU, TIP42G, TIP47G, TIP48G, TIP50G, UMC3NT2G, UMC5NT2G, A1013, LBC858AWT1G, MPS9633, MPS9634, TT2188, TT2146, TT2178, TT2158, TT2176