Справочник транзисторов. BC847AQB

 

Биполярный транзистор BC847AQB - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BC847AQB
   Маркировка: A2
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.34 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 1.5 pf
   Статический коэффициент передачи тока (hfe): 110
   Корпус транзистора: SOT8015

 Аналоги (замена) для BC847AQB

 

 

BC847AQB Datasheet (PDF)

 ..1. Size:225K  nxp
bc847aqb bc847bqb bc847cqb.pdf

BC847AQB
BC847AQB

BC847xQB series45 V, 100 mA NPN general-purpose transistorRev. 1 24 January 2020 Product data sheet1. General descriptionNPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.Table 1. Product overviewType number Package PNP complement:Nexperia JEDECBC847AQB SOT8015 MO-340BA BC85

 7.1. Size:1275K  nxp
bc847aqa bc847bqa bc847cqa.pdf

BC847AQB
BC847AQB

BC847XQA series45 V, 100 mA NPN general-purpose transistorsRev. 1 26 August 2015 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP complementNexperia JEITA

 7.2. Size:211K  cn yangzhou yangjie elec
bc846aq bc846bq bc847aq bc847bq bc847cq bc848aq bc848bq bc848cq.pdf

BC847AQB
BC847AQB

RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J

 8.1. Size:207K  motorola
bc846awt bc847awt bc848awt bc849awt bc850awt.pdf

BC847AQB
BC847AQB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846AWT1/DGeneral Purpose TransistorsBC846AWT1,BWT1NPN SiliconBC847AWT1,BWT1,COLLECTOR CWT1These transistors are designed for general purpose amplifier3BC848AWT1,BWT1,applications. They are housed in the SOT323/SC70 which isdesigned for low power surface mount applications.CWT11BASE2EMITTERMAX

 8.2. Size:220K  motorola
bc846alt bc847alt bc848alt bc849alt bc850alt.pdf

BC847AQB
BC847AQB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846ALT1/DBC846ALT1,BLT1General Purpose TransistorsBC847ALT1,NPN SiliconCOLLECTORBLT1,CLT1 thru3BC850ALT1,BLT1,1 CLT1BASEBC846, BC847 and BC848 areMotorola Preferred Devices2EMITTERMAXIMUM RATINGSBC847 BC848BC850 BC849Rating Symbol BC846 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1C

 8.3. Size:144K  nxp
bc847bm bc847am.pdf

BC847AQB
BC847AQB

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 8 20 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847C BC857CBC847

 8.4. Size:943K  nxp
bc847amb bc847bmb bc847cmb.pdf

BC847AQB
BC847AQB

BC847xMB series45 V, 100 mA NPN general-purpose transistorsRev. 1 5 March 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEITA JEDECBC847AMB SOT883B - - BC857AMBBC847BMB SOT88

 8.5. Size:364K  nxp
bc847amb bc847cmb.pdf

BC847AQB
BC847AQB

BC847xMB series45 V, 100 mA NPN general-purpose transistorsRev. 1 5 March 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECBC847AMB SOT883B - - BC857AMBBC847BMB SOT883B -

 8.6. Size:212K  nxp
bc847w-q bc847aw-q bc847bw-q bc847cw-q.pdf

BC847AQB
BC847AQB

BC847xW-Q series45 V, 100 mA NPN general-purpose transistorsRev. 2 24 June 2021 Product data sheet1. General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITABC847W-Q SOT323 SC-70 BC857W-QBC847AW-Q BC857AW-QBC847BW-Q BC857BW-Q

 8.7. Size:125K  nxp
bc847 bc847a bc847b bc847c bc847w bc847aw bc847bw bc847cw.pdf

BC847AQB
BC847AQB

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 8 20 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847C BC857CBC847

 8.8. Size:264K  nxp
bc847 bc847a bc847b bc847c bc847w bc847aw bc847bw bc847cw bc847am bc847bm bc847cm.pdf

BC847AQB
BC847AQB

BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 12 24 October 2019 Product data sheet1. Product profile1.1. General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB), very small SOT323 (SC-70) orultra small SOT883 (DFN1006-3) Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia

 8.9. Size:417K  central
bc846bwr bc847awr.pdf

BC847AQB
BC847AQB

BC846W SERIESBC847W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

 8.10. Size:310K  diodes
bc847at bc847bt bc847ct.pdf

BC847AQB
BC847AQB

BC847AT, BT, CT 45V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 45V Case: SOT523 IC = 100mA Collector Current Case Material: Molded Plastic. Green Molding Compound. Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Complementar

 8.11. Size:159K  diodes
bc847at-bt-ct.pdf

BC847AQB
BC847AQB

BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Die Construction A SOT-523 Complementary PNP Types Available Dim Min Max Typ C(BC857AT,BT,CT) A 0.15 0.30 0.22 Ultra-Small Surface Mount Package B 0.75 0.85 0.80 Lead Free/RoHS Compliant (Note 2) B CTOP VIEWC 1.45 1.75 1.60 "Green" Device (Note 4 and 5) D 0.50B

 8.12. Size:299K  diodes
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary PNP Types: BC856 BC858 Case material: molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note

 8.13. Size:46K  diodes
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf

BC847AQB
BC847AQB

BC846AW - BC848CWNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic InsertionSOT-323 Complementary PNP Types AvailableA(BC856W-BC858W) Dim Min MaxCA For Switching and AF Amplifier Applications 0.25 0.40B1.15 1.35Mechanical DataB CC2.00 2.20 Case: SOT-323, Molded PlasticD0.65 NominalB E Case material - UL Flammability Rating

 8.14. Size:876K  infineon
bc847a bc847b bc847bl3 bc847bw bc847c bc847cw bc848a bc848b bc848bl3 bc848bw bc848c bc848cw bc849b bc849c bc849cw bc850b bc850bw bc850c bc850cw.pdf

BC847AQB
BC847AQB

BC847...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC847BL3 is not qualified according AEC Q101Type Marking Pin

 8.16. Size:215K  mcc
bc847at-bt-ct sot-523.pdf

BC847AQB
BC847AQB

MCCMicro Commercial ComponentsTMBC847AT, BT, CT20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates Surface Mount Small RoHS Compliant. See ordering information) Epitaxial Die ConstructionSignal Transistor Complementary PNP Type Avai

 8.17. Size:666K  mcc
bc846aw-bw bc847aw-bw-cw bc848aw-bw-cw sot-323.pdf

BC847AQB
BC847AQB

MCCBC846AW/BWMicro Commercial ComponentsMicro Commercial ComponentsBC847AW/BW/CW20736 Marilla Street ChatsworthCA 91311BC848AW/BW/CWPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Low current (max. 100mA)General Purpose Low voltage (max. 65V) Epo

 8.18. Size:622K  mcc
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c bc849b bc849c.pdf

BC847AQB
BC847AQB

M C CTMMicro Commercial Components BC846A thru BC849CStatic Characteristic h I FE C 10 3000COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA18uA6 16uAT =25 14uA a 12uA4 100 10uA 8uA 6uA 24uA I B=2uA 0 100 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOREMITTER VOLTAGE V CE (V) V I

 8.19. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC847AQB
BC847AQB

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 8.20. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC847AQB
BC847AQB

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.21. Size:158K  onsemi
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC847AQB
BC847AQB

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.22. Size:66K  onsemi
bc847att1 bc847btt1 bc847ctt1.pdf

BC847AQB
BC847AQB

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control

 8.23. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g nsvbc849blt1g bc849clt1g bc849clt3g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC847AQB
BC847AQB

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 8.24. Size:178K  onsemi
bc846bwt1g bc847awt1g bc847bwt1g bc847cwt1g bc848bwt1g bc848cwt1g.pdf

BC847AQB
BC847AQB

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 8.25. Size:216K  onsemi
bc846amtf bc846bmtf bc846cmtf bc847amtf bc847bmtf bc847cmtf bc848bmtf bc848cmtf bc850amtf bc850cmtf.pdf

BC847AQB
BC847AQB

BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A

 8.26. Size:109K  onsemi
sbc847awt1g.pdf

BC847AQB
BC847AQB

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 8.27. Size:71K  onsemi
bc847att1-btt1-ctt1.pdf

BC847AQB
BC847AQB

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 Pb-Free Packages are Available* BASE2EMITTERMAXIMUM RATINGS (TA = 25C)Rating S

 8.28. Size:655K  onsemi
bc847btt1g bc847att1 bc847ctt1g.pdf

BC847AQB
BC847AQB

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1BASE Pb-Free Packages are Available*2EMITTERMAXIMUM RATINGS (TA = 25C)Rating

 8.29. Size:116K  onsemi
bc847alt1g bc846blt1g.pdf

BC847AQB
BC847AQB

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 8.30. Size:68K  onsemi
bc848cwt1g bc847awt1g.pdf

BC847AQB
BC847AQB

BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7

 8.31. Size:302K  secos
bc846a-bc847a-bc848a.pdf

BC847AQB
BC847AQB

BC846A, BBC847A, B, CElektronische BauelementeBC848A, B, CA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESADim Min MaxLnA 2.800 3.040General Purpose Transistor NPN Typen3 B 1.200 1.400Collect current : 0.1ASTop ViewO O BnC 0.890 1.110Operating Temp. : -55 C ~ +150 C1 2nD 0.370 0.500RoHS compliant productV GG 1.780 2.040H 0.013

 8.32. Size:201K  taiwansemi
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC847AQB
BC847AQB

BC846A/B, BC847A/B/C, BC848A/B/CTaiwan SemiconductorSmall Signal Product200mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface mount device type- Moisture sensitivity level 1- Matte Tin(Sn) lead finish with Nickel(Ni) under plate- Pb free and RoHS compliant- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC- Halo

 8.33. Size:2205K  htsemi
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Vo

 8.34. Size:1702K  lge
bc846aw-bw bc847aw-bw-cw bc848aw-bw-cw.pdf

BC847AQB
BC847AQB

BC846AW,BWBC847AW,BW,CWBC848AW,BW,CW STO-323 Transistor(NPN)1. BASE 2. EMITTER SOT-3233. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC846W 80 BC847W 50 V BC8

 8.35. Size:2832K  wietron
bc846aw bc847aw bc848aw.pdf

BC847AQB
BC847AQB

BC846AW/BWBC847AW/BW/CWBC848AW/BW/CWGeneral Purpose TransistorCOLLECTOR33NPN SiliconP b Lead(Pb)-Free112BASE2EMITTERSOT-323(SC-70)Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage BC846 65 45 V BC847 CEO V 30 BC848 Collector-Base Voltage BC846 80VVBC847 CBO 50BC848 30Emitter-Base Voltag

 8.36. Size:144K  wietron
bc847at.pdf

BC847AQB
BC847AQB

BC847AT/BT/CTCOLLECTOR3General Purpose Transistor331NPN Silicon21BASESC-89(SOT-523F)2EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitV 45Collector-Emitter Voltage CEO VdcVCBO50 VdcCollector-Base VoltageVEBO 6.0Emitter-Base Voltage VdcmAdcCollector Current-ContinuousIC 100Thermal CharacteristicsCharacter

 8.37. Size:242K  semtech
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC847AQB
BC847AQB

BC846BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

 8.38. Size:392K  lrc
lbc847awt1g.pdf

BC847AQB
BC847AQB

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 8.39. Size:333K  lrc
lbc847alt1g.pdf

BC847AQB
BC847AQB

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 V SeriesESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHSS-LBC846ALT1Grequirements. Series S- Prefix for Automotive and Other Applications Requiring UniqueSite and Co

 8.40. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf

BC847AQB
BC847AQB

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO

 8.41. Size:402K  lrc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf

BC847AQB
BC847AQB

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 8.42. Size:404K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g.pdf

BC847AQB
BC847AQB

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 8.43. Size:402K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g lbc847clt3g lbc848alt1g lbc848alt3g.pdf

BC847AQB
BC847AQB

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 8.44. Size:139K  lrc
lbc847att1g lbc847btt1g lbc847ctt1g.pdf

BC847AQB
BC847AQB

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 8.45. Size:446K  panjit
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw bc849bw bc849cw bc850bw bc850cw.pdf

BC847AQB
BC847AQB

BC846AW ~ BC850CWNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWERVOLTAGE 250 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per

 8.46. Size:536K  panjit
bc846a-au bc847a-au bc848a-au bc846b-au bc847b-au bc848b-au bc849b-au bc850b-au bc847c-au bc848c-au bc849c-au bc850c-au.pdf

BC847AQB
BC847AQB

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES General purpose amplifier applications0.120(3.04)0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20

 8.47. Size:1070K  panjit
bc846aw-au bc847aw-au bc848aw-au bc846bw-au bc847bw-au bc848bw-au bc849bw-au bc850bw-au bc847cw-au bc848cw-au bc849cw-au bc850cw-au.pdf

BC847AQB
BC847AQB

BC846AW-AU ~ BC850CW-AUNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWER 250 mWattVOLTAGEFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic

 8.48. Size:330K  panjit
bc846a bc847a bc848a bc846b bc847b bc848b bc849b bc850b bc847c bc848c bc849c bc850c.pdf

BC847AQB
BC847AQB

BC846,BC847,BC848,BC849,BC850 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. .0.056(1.40) (Ha

 8.49. Size:145K  comchip
bc848c-g bc847a-g.pdf

BC847AQB
BC847AQB

Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)

 8.50. Size:123K  comchip
bc847aw-g bc847cw-g.pdf

BC847AQB
BC847AQB

Small Signal TransistorBC846AW-G Thru. BC848CW-G (NPN)RoHS DeviceFeatures -Power dissipationPCM: 0.15W (@TA=25C)SOT-323 -Collector currentICM: 0.1A0.087 (2.20) -Collector-base voltage0.079 (2.00)VCBO: BC846W=80V3BC847W=50V0.053(1.35)BC848W=30V0.045(1.15) -Operating and storage junction temperature 1 2range: TJ, TSTG= -55 to +150C0.006 (0.15)0.055

 8.51. Size:433K  umw-ic
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

RUMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collect

 8.53. Size:2633K  high diode
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

BC846-8SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking: BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; CB ESymbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846BC847 50 30

 8.54. Size:1245K  mdd
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

BC847SOT-23 Plastic-Encapsulate TransistorSOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, CBC848A, B, C 1. BASE2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsPACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)S

 8.55. Size:380K  powersilicon
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

DATA SHEET BC846A/B,BC847A/B/C,BC848A/B/C NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30 ~ 65 V CURRENT 100 mA FEATURES IDEALLY SUITED FOR AUTOMATIC INSERTION FOR SWITCHING AND AF AMPLIFIER APPLICATIONS NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC =100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA

 8.58. Size:2177K  wpmtek
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC847AQB
BC847AQB

BC846/847/848/849/850 TRANSISTORNPNFEATURES Low current (max. 100 mA) Low voltage (max. 65 V).APPLICATIONS General purpose switching and amplification.1.Base 2.Emitter 3.Collector DESCRIPTIONSOT-23 Plastic PackageNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Symbol Val

 8.59. Size:1237K  cn yongyutai
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

BC846/7/8 TRANSI STOR (NPN)BC846BC847BC848Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ideaiiy suited for automatic insertion For switching and AF amplifier applicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848Collector-Emitter Voltage 6

 8.60. Size:553K  cn zre
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

BC846/BC847/BC848 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applicationsMarking: Mechanical DataBC846A=1A BC846B=1B Small Outline Plastic PackageBC847A=

 8.61. Size:3444K  cn twgmc
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC847AQB
BC847AQB

BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC8 46 THRU BC8 50TRANSISTOR(NPN)FEATURE Low current (max. 100 mA)SOT-23 Low voltage (max. 65 V).1BASE APPLICATIONS2EMITTER General purpose switching and amplification. 3COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/86

 8.62. Size:303K  cn yangzhou yangjie elec
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

RoHS RoHSCOMPLIANT COMPLIANTBC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage 80 BC84

 8.63. Size:302K  cn yangzhou yangjie elec
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf

BC847AQB
BC847AQB

RoHS RoHSCOMPLIANT COMPLIANTBC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL

 8.64. Size:455K  cn doeshare
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC847AQB
BC847AQB

BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE:

 8.65. Size:158K  cn fosan
bc846a bc847a bc848a bc846b bc847b bc848b bc846c bc847c bc848c.pdf

BC847AQB
BC847AQB

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846BC847BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B,BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V

 8.66. Size:221K  cn fosan
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC847AQB
BC847AQB

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC846/847/848MAXIMUM RATINGS Characteristic Symbol Unit(BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter VoltageV 65 45 30 VdcCEOCollector-Base VoltageV 80 50 30 VdcCBOEmitter-Base Voltage

 8.67. Size:586K  cn hottech
bc847a bc847b bc847c.pdf

BC847AQB
BC847AQB

BC847BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC857 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

 8.68. Size:255K  cn hottech
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf

BC847AQB
BC847AQB

Plastic-Encapsulate TransistorsFEATURES(NPN)BC846A/BFor general AF applications(NPN)BC847A/B/CHigh collector current(NPN)BC848A/B/CHigh current gainLow collector-emitter saturation voltageMarkingBC846A BC846B BC847A BC847B1A 1B 1E 1FBC847C BC848A BC848B BC848C1. BASE2. EMITTER SOT-231G 1J 1K 1L3. COLLECTOMAXIMUM RATINGS (TA=25 unless otherwise noted)Par

 8.69. Size:2559K  cn xch
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf

BC847AQB
BC847AQB

BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsSOT-23A Dim Min MaxDEVICE MARKING CA 0.37 0.51BC846A=1A; BC846B=1B; B C B1.20 1.40BC847A=1E; BC847B=1F; BC847C=1G; C2.30 2.50TOP VIEWB EBC848A=1J; BC848B=1K: BC848C=1LD0.89 1.03D E

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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