BC847AW-Q - Даташиты. Аналоги. Основные параметры

BC847xW-Q series 45 V, 100 mA NPN general-purpose transistors Rev. 2 24 June 2021 Product data sheet 1. General description NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package PNP complement Nexperia JEITA BC847W-Q SOT323 SC-70 BC857W-Q BC847AW-Q BC857AW-Q BC847BW-Q BC857BW-Q

MCC BC846AW/BW Micro Commercial Components Micro Commercial Components BC847AW/BW/CW 20736 Marilla Street Chatsworth CA 91311 BC848AW/BW/CW Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Low current (max. 100mA) General Purpose Low voltage (max. 65V) Epo

BC846AW,BW BC847AW,BW,CW BC848AW,BW,CW STO-323 Transistor(NPN) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC846W 80 BC847W 50 V BC8

BC846AW-AU BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER 250 mWatt VOLTAGE FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic

Small Signal Transistor BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation PCM 0.15W (@TA=25 C) SOT-323 -Collector current ICM 0.1A 0.087 (2.20) -Collector-base voltage 0.079 (2.00) VCBO BC846W=80V 3 BC847W=50V 0.053(1.35) BC848W=30V 0.045(1.15) -Operating and storage junction temperature 1 2 range TJ, TSTG= -55 to +150 C 0.006 (0.15) 0.055