BC856BM - Даташиты. Аналоги. Основные параметры
Наименование производителя: BC856BM
Маркировка: J2
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 2.5 pf
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора: SOT883
BC856BM Datasheet (PDF)
bc856bm.pdf
BC856BM 60 V, 100 mA PNP general-purpose transistor 19 August 2015 Product data sheet 1. General description PNP general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface- Mounted Device (SMD) plastic package. NPN complement BC846BM. 2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali
bc856bm3t5g.pdf
EMT1DXV6 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier http //onsemi.com applications. It is housed in the SOT-563 which is designed for low power surface mount applications. (3) (2) (1) Features Lead-Free Solder Plating Low VCE(SAT), t0.5 V Q1 Q2 NSV Prefix for Automotive and Other Applications Requiring Unique Site
bc856bm3 nsvbc856bm3.pdf
BC856BM3, NSVBC856BM3 General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-723 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifie
bc856bm3t5g-d.pdf
BC856BM3T5G Preferred Devices General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-723 which is designed for low power surface mount applications. http //onsemi.com This is a Pb-Free Device COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO -65 V Collecto
Другие транзисторы... BC847BQB , BC847BW-Q , BC847CQA , BC847CQB , BC847CW-Q , BC847RA , BC847RAPN , BC847W-Q , 2SD718 , BC857AQA , BC857BQA , BC857CQA , BC857RA , BCM53DS , BCM56DS , BCM847QAS , BCM856BS-DG .
History: IMT1AFRA | U2TB406 | 2N3999 | STC4073D | LDTB143TKT1G | RN1703JE | 2SC3181N
History: IMT1AFRA | U2TB406 | 2N3999 | STC4073D | LDTB143TKT1G | RN1703JE | 2SC3181N
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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