MJD44H11A datasheet и подбор замены

 ..1. Size:237K  nxp
 mjd44h11a.pdf 

MJD44H11A 80 V, 8 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD45H11A 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Ele

 6.1. Size:192K  motorola
 mjd44h11 mjd45h11.pdf 

Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS

 6.2. Size:569K  st
 mjd44h11t4a mjd45h11t4a.pdf 

MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche

 6.3. Size:210K  st
 mjd44h11t4-a.pdf 

MJD44H11T4-A MJD45H11T4-A Complementary power transistors . Features The devices are qualified for automotive application TAB2 Low collector-emitter saturation voltage Fast switching speed 3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1 DPAK Applications TO-252 Power amplifier Switching circuits Figure 1. Internal sche

 6.4. Size:395K  st
 mjd44h11 mjd45h11.pdf 

MJD44H11, MJD45H11 Complementary power transistors Datasheet - production data . Features Low collector-emitter saturation voltage TAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 Applications DPAK TO-252 Power amplifier Switching circuits Description Figure 1. Internal schematic diagram These d

 6.5. Size:113K  fairchild semi
 mjd44h11.pdf 

March 2009 MJD44H11 NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation V

 6.6. Size:236K  nxp
 mjd44h11.pdf 

MJD44H11 80 V, 8 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD45H11 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect

 6.7. Size:148K  onsemi
 mjd44h11t5g.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le

 6.8. Size:148K  onsemi
 mjd44h11g.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le

 6.9. Size:148K  onsemi
 mjd44h11t4g.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le

 6.10. Size:148K  onsemi
 mjd44h11-1g.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le

 6.11. Size:148K  onsemi
 mjd44h11rlg.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le

 6.12. Size:148K  onsemi
 njvmjd44h11 njvmjd45h11.pdf 

MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le

 6.13. Size:126K  onsemi
 mjd44h11 mjd45h11.pdf 

MJD44H11 (NPN), MJD45H11 (PNP) Complementary Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 8 AMPERES Lead Formed for Surface Mount Application in Plastic Slee

 6.14. Size:243K  inchange semiconductor
 mjd44h11.pdf 

isc Silicon NPN Power Transistors MJD44H11 DESCRIPTION Low Collector-Emitter Saturation Voltage V )= 1.0V(Max)@ I = 8A CE(sat C Fast Switching Speeds Complement to Type MJD45H11 DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplification and switchin