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2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C Low collector saturation voltage : V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B

2SA1245 TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications Unit: mm VHF~UHF Band Low Noise Amplifier Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -15 VCollector-emitter voltage VCEO -8 VEmitter-base voltage VEBO -2 VCollector current IC -30 mA

2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) (I = -3 A) C High speed switching time: t = 1.0 s (typ.) stg Complementary to 2SC3074 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60

2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1241 Power Amplifier Applications Unit: mm Power Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (I = -1 A) C Excellent switching time: t = 1.0 s (typ.) stg Complementary to 2SC3076 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollecto

Ordering number:ENN1032BPNP/NPN Epitaxial Planar Silicon Transistors2SA1248/2SC3116160V/700mA Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters.unit:mm2009BFeatures[2SA1248/2SC3116] High breakdown voltage. 8.02.74.0 Large current capacity. Using MBIT process3.01.60.80.80.60.51 : Emitter1 2 32 : Co

Ordering number:ENN1060CPNP/NPN Epitaxial Planar Silicon Transistors2SA1249/2SC3117160V/1.5A Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters. unit:mm2009BFeatures [2SA1249/2SC3117]8.0 High breakdown voltage.2.74.0 Large current capacity. Adoption of MBIT process.3.01.60.80.80.60.51 : Emitter1 2 32

Ordering number:ENN1047CPNP/NPN Epitaxial Planar Silicon Transistors2SA1246/2SC3114High-VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and highly resistant to breakdown.2003B[2SA1246/2SC3114]5.04.04.00.450.50.440.451 2 31 : Emitter2 : Collector( ) : 2SA1246 3 : Base1.3 1.3 SANYO : NPSpecificationsAbsolute Maxim

JMnic Product Specification Silicon PNP Power Transistors 2SA1249 DESCRIPTION With TO-126 package Complement to type 2SC3117 High breakdown voltage Large current capacity APPLICATIONS For color TV sound output,converters, Inverters applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=2

2SA1242(PNP)TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) : hFE (2) = 70 (min) (VCE = -2 V, IC = -4 A) TO-252-2L Low collector saturation voltage : VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1

SMD Type TransistorsPNP Transistors2SA1245SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-30mA1 2 Collector Emitter Voltage VCEO=-8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Col

DIP Type TransistorsPNP Transistors2SA1244TO-251 Features Low collector saturation voltage1 2 3 High speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC30741 321 Base2 Collector3 EmitterUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50

2SA1244PNP TransistorsTO-251 Features Low collector saturation voltage1 2 3 High speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC30741 321 Base2 Collector3 EmitterUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltag

isc Silicon PNP Power Transistor 2SA1249DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V (Min)(BR)CEOLarge Current CapacityComplement to Type 2SC3117Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV sound output, converters, inverters.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1242DESCRIPTIONh =100-320(I = -0.5A; V = -2V)FE C CEh =70(Min)(I = -4A; V = -2V)FE C CELow Collector-Emitter Saturation Voltage-: V )= -1.0V(Max)( I = -4A; I = -0.1A)CE(sat C B Power Dissipation-High: P = 10W@T =25,P = 10W@Ta=25C C CMinimum Lot-to-Lot variations for robust device performanceand reliable operation

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1244DESCRIPTIONWith TO-251(IPAK) packagingHigh speed switching timeLow collector saturation voltageComplement to type 2SC3074Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U