Справочник транзисторов. PMBT2222AM

 

Биполярный транзистор PMBT2222AM - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PMBT2222AM
   Маркировка: M3
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 340 MHz
   Ёмкость коллекторного перехода (Cc): 8 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT883

 Аналоги (замена) для PMBT2222AM

 

 

PMBT2222AM Datasheet (PDF)

 ..1. Size:215K  nxp
pmbt2222am.pdf

PMBT2222AM
PMBT2222AM

PMBT2222AM40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device(SMD) plastic package.PNP complement: PMBT2907AM2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package L

 0.1. Size:216K  nxp
pmbt2222amb.pdf

PMBT2222AM
PMBT2222AM

PMBT2222AMB40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-MountedDevice (SMD) plastic package.PNP complement: PMBT2907AMB2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package

 5.1. Size:111K  philips
pmbt2222 pmbt2222a.pdf

PMBT2222AM
PMBT2222AM

PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi

 5.2. Size:51K  philips
pmbt2222 pmbt2222a 4.pdf

PMBT2222AM
PMBT2222AM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT2222; PMBT2222ANPN switching transistors1999 Apr 27Product specificationSupersedes data of 1997 Sep 09Philips Semiconductors Product specificationNPN switching transistors PMBT2222; PMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIO

 5.3. Size:256K  nxp
pmbt2222ays.pdf

PMBT2222AM
PMBT2222AM

PMBT2222AYS40 V, 600 mA, double NPN switching transistor24 June 2015 Product data sheet1. General descriptionDouble NPN switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double PNP complement: PMBT2907AYS2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V

 5.4. Size:111K  nxp
pmbt2222 pmbt2222a.pdf

PMBT2222AM
PMBT2222AM

PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi

 5.5. Size:237K  nxp
pmbt2222aqa.pdf

PMBT2222AM
PMBT2222AM

PMBT2222AQA40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-MountedDevice (SMD) plastic package with visible and solderable side pads.PNP complement: PMBT2907AQA2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadl

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