www.msksemi.comMMBT2907A-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A-MS)1. BASEMarking: 2F 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter

MMBT2907A-AUPNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWattVOLTAGE 60 VoltFEATURESPNP epitaxial silicon, planar design 0.120(3.04)0.110(2.80)Collector-emitter voltage VCE = -60VCollector current IC = -600mAAEC-Q101 qualifiedLead free in compliance with EU RoHS 2.0 0.056(1.40)Green molding compound as per IEC 61249 standard0.047(1.20)0.079(2.00) 0.008(0.20)

General Purpose TransistorMMBT2907A-G (PNP)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction -Device is designed as a general purpose0.118(3.00)0.110(2.80)amplifier and switching.3 -Useful dynamic range exceeds to 600mA0.055(1.40)0.047(1.20) As a switch and to 100MHz as an amplifier.1 20.079(2.00)0.071(1.80)0.006(0.15)0.003(0.08)0.041(1.05)0.

Jingdao Microelectronics co.LTD MMBT2907AMMBT2907ASOT-23PNP TRANSISTOR3FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -60 V2.EMITTER3.COLLECTORColle